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Title: Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections

Authors:
; ; ;
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 92 Journal Issue: 21; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1233869

Barmparis, Georgios D., Puzyrev, Yevgeniy S., Zhang, X. -G., and Pantelides, Sokrates T.. Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections. United States: N. p., Web. doi:10.1103/PhysRevB.92.214111.
Barmparis, Georgios D., Puzyrev, Yevgeniy S., Zhang, X. -G., & Pantelides, Sokrates T.. Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections. United States. doi:10.1103/PhysRevB.92.214111.
Barmparis, Georgios D., Puzyrev, Yevgeniy S., Zhang, X. -G., and Pantelides, Sokrates T.. 2015. "Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections". United States. doi:10.1103/PhysRevB.92.214111.
@article{osti_1233869,
title = {Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections},
author = {Barmparis, Georgios D. and Puzyrev, Yevgeniy S. and Zhang, X. -G. and Pantelides, Sokrates T.},
abstractNote = {},
doi = {10.1103/PhysRevB.92.214111},
journal = {Physical Review B},
number = 21,
volume = 92,
place = {United States},
year = {2015},
month = {12}
}