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Title: Suppress carrier recombination by introducing defects. The case of Si solar cell

Deep level defects are usually harmful to solar cells. Here we show that incorporation of selected deep level defects in the carrier-collecting region, however, can be utilized to improve the efficiency of optoelectronic devices. The designed defects can help the transport of the majority carriers by creating defect levels that is resonant with the band edge state, and/or reduce the concentration of minority carriers through Coulomb repulsion, thus suppressing the recombination at the carrier-collecting region. The selection process is demonstrated by using Si solar cell as an example. In conclusion, our work enriches the understanding and utilization of the semiconductor defects.
ORCiD logo [1] ;  [1] ;  [2] ;  [2] ;  [3]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Chinese Academy of Sciences (CAS), Beijing (China)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States); Beijing Computational Science Research Center, Beijing (China)
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 2; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
14 SOLAR ENERGY; passivation; solar cells; defect levels; band gap; surface passivation
OSTI Identifier: