skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Suppress carrier recombination by introducing defects. The case of Si solar cell

Abstract

Deep level defects are usually harmful to solar cells. Here we show that incorporation of selected deep level defects in the carrier-collecting region, however, can be utilized to improve the efficiency of optoelectronic devices. The designed defects can help the transport of the majority carriers by creating defect levels that is resonant with the band edge state, and/or reduce the concentration of minority carriers through Coulomb repulsion, thus suppressing the recombination at the carrier-collecting region. The selection process is demonstrated by using Si solar cell as an example. In conclusion, our work enriches the understanding and utilization of the semiconductor defects.

Authors:
ORCiD logo [1];  [1];  [2];  [2];  [3]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Chinese Academy of Sciences (CAS), Beijing (China)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States); Beijing Computational Science Research Center, Beijing (China)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1233605
Grant/Contract Number:  
EE0006336
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 2; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; passivation; solar cells; defect levels; band gap; surface passivation

Citation Formats

Liu, Yuanyue, Stradins, Paul, Deng, Huixiong, Luo, Junwei, and Wei, Su -Huai. Suppress carrier recombination by introducing defects. The case of Si solar cell. United States: N. p., 2016. Web. doi:10.1063/1.4939628.
Liu, Yuanyue, Stradins, Paul, Deng, Huixiong, Luo, Junwei, & Wei, Su -Huai. Suppress carrier recombination by introducing defects. The case of Si solar cell. United States. doi:10.1063/1.4939628.
Liu, Yuanyue, Stradins, Paul, Deng, Huixiong, Luo, Junwei, and Wei, Su -Huai. Mon . "Suppress carrier recombination by introducing defects. The case of Si solar cell". United States. doi:10.1063/1.4939628. https://www.osti.gov/servlets/purl/1233605.
@article{osti_1233605,
title = {Suppress carrier recombination by introducing defects. The case of Si solar cell},
author = {Liu, Yuanyue and Stradins, Paul and Deng, Huixiong and Luo, Junwei and Wei, Su -Huai},
abstractNote = {Deep level defects are usually harmful to solar cells. Here we show that incorporation of selected deep level defects in the carrier-collecting region, however, can be utilized to improve the efficiency of optoelectronic devices. The designed defects can help the transport of the majority carriers by creating defect levels that is resonant with the band edge state, and/or reduce the concentration of minority carriers through Coulomb repulsion, thus suppressing the recombination at the carrier-collecting region. The selection process is demonstrated by using Si solar cell as an example. In conclusion, our work enriches the understanding and utilization of the semiconductor defects.},
doi = {10.1063/1.4939628},
journal = {Applied Physics Letters},
number = 2,
volume = 108,
place = {United States},
year = {2016},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

Save / Share: