Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)

Comes, Ryan B.; Xu, Peng; Jalan, Bharat; Chambers, Scott A.

doi:10.1063/1.4932063

Title: Band alignment of epitaxial SrTiO₃ thin films with (LaAlO₃)_0.3-(Sr₂AlTaO₆)_0.7 (001)

Abstract

SrTiO₃ (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO₃)_0.3-(Sr₂AlTaO₆)_0.7 (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STO films deposited using two different molecular beam epitaxy approaches. Here, we find that the valence band offset ranges from +0.2(1) eV to -0.2(1) eV depending on surface conditions for the film and substrate. From these results we extract a conduction band offset from -2.4(1) eV to -2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer.

Authors:

Comes, Ryan B. ^[1]; Xu, Peng ^[2]; Jalan, Bharat ^[2]; Chambers, Scott A. ^[1]

Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Univ. of Minnesota, Minneapolis, MN (United States)

Publication Date:: Mon Sep 28 00:00:00 EDT 2015

Research Org.:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States). Environmental Molecular Sciences Laboratory (EMSL)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1229940

Alternate Identifier(s):: OSTI ID: 1229681

Report Number(s):: PNNL-SA-111633
Journal ID: ISSN 0003-6951; APPLAB; 48341; KC0203020

Grant/Contract Number:: AC05-76RL01830; 10122

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 107; Journal Issue: 13; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; epitaxial; Environmental Molecular Sciences Laboratory

Citation Formats


                    Comes, Ryan B., Xu, Peng, Jalan, Bharat, and Chambers, Scott A. Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001).  United States: N. p., 2015. 
Web.  doi:10.1063/1.4932063.

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                    Comes, Ryan B., Xu, Peng, Jalan, Bharat, & Chambers, Scott A. Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001).  United States.  https://doi.org/10.1063/1.4932063

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                    Comes, Ryan B., Xu, Peng, Jalan, Bharat, and Chambers, Scott A. Mon .  
"Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)".  United States.  https://doi.org/10.1063/1.4932063.  https://www.osti.gov/servlets/purl/1229940.

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@article{osti_1229940,

  title        = {Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)},

  author       = {Comes, Ryan B. and Xu, Peng and Jalan, Bharat and Chambers, Scott A.},

  abstractNote = {SrTiO3 (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STO films deposited using two different molecular beam epitaxy approaches. Here, we find that the valence band offset ranges from +0.2(1) eV to -0.2(1) eV depending on surface conditions for the film and substrate. From these results we extract a conduction band offset from -2.4(1) eV to -2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer.},

  doi          = {10.1063/1.4932063},

  journal      = {Applied Physics Letters},

  number       = 13,

  volume       = 107,

  place        = {United States},

  year         = {Mon Sep 28 00:00:00 EDT 2015},

  month        = {Mon Sep 28 00:00:00 EDT 2015}

}

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Works referencing / citing this record:

Energy Level Alignment and Cation Charge States at the LaFeO ₃ /LaMnO ₃ (001) Heterointerface
journal, April 2017

Smolin, Sergey Y.; Choquette, Amber K.; Wilks, Regan G.
Advanced Materials Interfaces, Vol. 4, Issue 14
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Spectral identification scheme for epitaxially grown single-phase niobium dioxide
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Hadamek, Tobias; Posadas, Agham B.; Dhamdhere, Ajit
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Title: Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)

Abstract

Citation Formats

Room-temperature ferroelectricity in strained SrTiO3 journal, August 2004

Effect of reduced dimensionality on the optical band gap of SrTiO 3 journal, March 2013

Surface reconstructions in molecular beam epitaxy of SrTiO 3 journal, November 2014

Achieving A-Site Termination on La0.18Sr0.82Al0.59Ta0.41O3 Substrates journal, April 2010

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Band offsets of wide-band-gap oxides and implications for future electronic devices journal, January 2000

Molecular beam epitaxy of SrTiO3 with a growth window journal, July 2009

LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces journal, August 2013

Band offsets and Schottky barrier heights of high dielectric constant oxides journal, October 2002

Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO 3 films journal, November 2013

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain journal, February 2011

Scanning tunneling microscopy of reconstructions on the SrTiO3() surface journal, May 2002

Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V-1 s-1 journal, April 2010

Band Alignment, Built-In Potential, and the Absence of Conductivity at the LaCrO 3 / SrTiO 3 ( 001 ) Heterojunction journal, November 2011

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Why some interfaces cannot be sharp journal, January 2006

First-principles calculation of the band offset at B a O / B a T i O 3 and S r O / S r T i O 3 interfaces journal, April 2003

Visible light carrier generation in co-doped epitaxial titanate films journal, March 2015

A-site layer terminated perovskite substrate: NdGaO3 journal, April 1999

Experimental determination of valence band maxima for SrTiO[sub 3], TiO[sub 2], and SrO and the associated valence band offsets with Si(001) journal, January 2004

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Strontium titanate photoelectrodes. Efficient photoassisted electrolysis of water at zero applied potential journal, May 1976

RHEED Intensity Oscillations for the Stoichiometric Growth of SrTiO3 Thin Films by Reactive Molecular Beam Epitaxy journal, January 2000

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Title: Band alignment of epitaxial SrTiO₃ thin films with (LaAlO₃)_0.3-(Sr₂AlTaO₆)_0.7 (001)

Room-temperature ferroelectricity in strained SrTiO₃
journal, August 2004

Effect of reduced dimensionality on the optical band gap of SrTiO ₃
journal, March 2013

Surface reconstructions in molecular beam epitaxy of SrTiO ₃
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Achieving A-Site Termination on La0.18Sr0.82Al0.59Ta0.41O3 Substrates
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Band-Gap Reduction and Dopant Interaction in Epitaxial La,Cr Co-doped SrTiO ₃ Thin Films
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Stoichiometric, nonstoichiometric, and locally nonstoichiometric SrTiO3 films grown by molecular beam epitaxy
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Molecular beam epitaxy of SrTiO3 with a growth window
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Band offsets and Schottky barrier heights of high dielectric constant oxides
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Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
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Epitaxial SrTiO₃ films with electron mobilities exceeding 30,000 cm² V^-1 s^-1
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First-principles calculation of the band offset at ${B a O / B a T i O}_{3}$ and ${S r O / S r T i O}_{3}$ interfaces
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Experimental determination of valence band maxima for SrTiO[sub 3], TiO[sub 2], and SrO and the associated valence band offsets with Si(001)
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Electrostatic carrier doping of GdTiO ₃ /SrTiO ₃ interfaces
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Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction
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Strontium titanate photoelectrodes. Efficient photoassisted electrolysis of water at zero applied potential
journal, May 1976

RHEED Intensity Oscillations for the Stoichiometric Growth of SrTiO₃ Thin Films by Reactive Molecular Beam Epitaxy
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