Dynamic Pattern Formation in Electron-Beam-Induced Etching [Emergent formation of dynamic topographic patterns in electron beam induced etching]
Abstract
Here, we report highly ordered topographic patterns that form on the surface of diamond, span multiple length scales, and have a symmetry controlled by the precursor gas species used in electron-beam-induced etching (EBIE). The pattern formation dynamics reveals an etch rate anisotropy and an electron energy transfer pathway that is overlooked by existing EBIE models. Therefore, we, modify established theory such that it explains our results and remains universally applicable to EBIE. Furthermore, the patterns can be exploited in controlled wetting, optical structuring, and other emerging applications that require nano- and microscale surface texturing of a wide band-gap material.
- Authors:
-
- Univ. of Technology Sydney, NSW (Astralia). School of Mathematical and Physical Sciences; Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- FEI Company, Hillsboro, OR (United States)
- Univ. of Technology Sydney, NSW (Astralia). School of Mathematical and Physical Sciences
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1366917
- Alternate Identifier(s):
- OSTI ID: 1229785
- Report Number(s):
- LLNL-JRNL-676897
Journal ID: ISSN 0031-9007; PRLTAO
- Grant/Contract Number:
- AC52-07NA27344; 130100592
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 25; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Martin, Aiden A., Bahm, Alan, Bishop, James, Aharonovich, Igor, and Toth, Milos. Dynamic Pattern Formation in Electron-Beam-Induced Etching [Emergent formation of dynamic topographic patterns in electron beam induced etching]. United States: N. p., 2015.
Web. doi:10.1103/PhysRevLett.115.255501.
Martin, Aiden A., Bahm, Alan, Bishop, James, Aharonovich, Igor, & Toth, Milos. Dynamic Pattern Formation in Electron-Beam-Induced Etching [Emergent formation of dynamic topographic patterns in electron beam induced etching]. United States. https://doi.org/10.1103/PhysRevLett.115.255501
Martin, Aiden A., Bahm, Alan, Bishop, James, Aharonovich, Igor, and Toth, Milos. Tue .
"Dynamic Pattern Formation in Electron-Beam-Induced Etching [Emergent formation of dynamic topographic patterns in electron beam induced etching]". United States. https://doi.org/10.1103/PhysRevLett.115.255501. https://www.osti.gov/servlets/purl/1366917.
@article{osti_1366917,
title = {Dynamic Pattern Formation in Electron-Beam-Induced Etching [Emergent formation of dynamic topographic patterns in electron beam induced etching]},
author = {Martin, Aiden A. and Bahm, Alan and Bishop, James and Aharonovich, Igor and Toth, Milos},
abstractNote = {Here, we report highly ordered topographic patterns that form on the surface of diamond, span multiple length scales, and have a symmetry controlled by the precursor gas species used in electron-beam-induced etching (EBIE). The pattern formation dynamics reveals an etch rate anisotropy and an electron energy transfer pathway that is overlooked by existing EBIE models. Therefore, we, modify established theory such that it explains our results and remains universally applicable to EBIE. Furthermore, the patterns can be exploited in controlled wetting, optical structuring, and other emerging applications that require nano- and microscale surface texturing of a wide band-gap material.},
doi = {10.1103/PhysRevLett.115.255501},
journal = {Physical Review Letters},
number = 25,
volume = 115,
place = {United States},
year = {Tue Dec 15 00:00:00 EST 2015},
month = {Tue Dec 15 00:00:00 EST 2015}
}
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