skip to main content

DOE PAGESDOE PAGES

Title: 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. Furthermore, we circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1] ;  [1] ;  [3]
  1. Ecole Polytechnique Federale de Lausanne (EPFL), Neuchatel (Switzerland)
  2. CSEM PV-Center, Neuchatel (Switzerland)
  3. Ecole Polytechnique Federale de Lausanne (EPFL), Neuchatel (Switzerland); CSEM PV-Center, Neuchatel (Switzerland)
Publication Date:
Grant/Contract Number:
EE0006335
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
École Polytechnique Fédérale de Lausanne (Switzerland)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
OSTI Identifier:
1229741