Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

doi:10.1063/1.4929583

Title: Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Authors:

^[1]; Specht, Petra ^[2]; Anderson, Travis J. ^[1]; Koehler, Andrew D. ^[1]; Weaver, Bradley D. ^[1]; Luysberg, Martina ^[3]; Dubon, Oscar D. ^[2]; Kub, Francis J. ^[1]; Weatherford, Todd R. ^[4]; Hobart, Karl D. ^[1]

U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA
University of California at Berkeley, Berkeley, California 94720, USA
ERC, Research Center Juelich GmbH, 52425 Juelich, Germany
Naval Postgraduate School, Monterey, California 93943, USA

Publication Date:: 2015-08-26

Sponsoring Org.:: USDOE

OSTI Identifier:: 1229644

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 107 Journal Issue: 8; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Greenlee, Jordan D., Specht, Petra, Anderson, Travis J., Koehler, Andrew D., Weaver, Bradley D., Luysberg, Martina, Dubon, Oscar D., Kub, Francis J., Weatherford, Todd R., and Hobart, Karl D. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4929583.

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                    Greenlee, Jordan D., Specht, Petra, Anderson, Travis J., Koehler, Andrew D., Weaver, Bradley D., Luysberg, Martina, Dubon, Oscar D., Kub, Francis J., Weatherford, Todd R., & Hobart, Karl D. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs.  United States.  doi:10.1063/1.4929583.

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                    Greenlee, Jordan D., Specht, Petra, Anderson, Travis J., Koehler, Andrew D., Weaver, Bradley D., Luysberg, Martina, Dubon, Oscar D., Kub, Francis J., Weatherford, Todd R., and Hobart, Karl D. Wed .  
        "Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs".  United States.  doi:10.1063/1.4929583.

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@article{osti_1229644,

  title        = {Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs},

  author       = {Greenlee, Jordan D. and Specht, Petra and Anderson, Travis J. and Koehler, Andrew D. and Weaver, Bradley D. and Luysberg, Martina and Dubon, Oscar D. and Kub, Francis J. and Weatherford, Todd R. and Hobart, Karl D.},

  abstractNote = {},

  doi          = {10.1063/1.4929583},

  journal      = {Applied Physics Letters},

  number       = 8,

  volume       = 107,

  place        = {United States},

  year         = {2015},

  month        = {8}

}

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DOI: 10.1063/1.4929583

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Works referenced in this record:

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Zhang, Yifei; Singh, Jasprit
Journal of Applied Physics, Vol. 85, Issue 1
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Radiation effects in GaN materials and devices
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Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy
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White, B. D.; Bataiev, M.; Brillson, L. J.
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Electrical, spectral, and chemical properties of 1.8 mev proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence
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Simulation of Radiation Effects in AlGaN/GaN HEMTs
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dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
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Radiation hardness of gallium nitride
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High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors
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Luo, B.; Johnson, J. W.; Ren, F.
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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation
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Anderson, Travis J.; Koehler, Andrew D.; Greenlee, Jordan D.
IEEE Electron Device Letters, Vol. 35, Issue 8
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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films
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Tadjer, Marko J.; Anderson, Travis J.; Hobart, Karl D.
IEEE Electron Device Letters, Vol. 33, Issue 1
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Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs
journal, August 2008

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Similar Records

Title: Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Citation Formats

Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor journal, January 1999

Radiation effects in GaN materials and devices journal, January 2013

The Displacement of Atoms in Solids by Radiation journal, January 1955

SRIM – The stopping and range of ions in matter (2010) journal, June 2010

Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys journal, May 2005

Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy journal, December 2002

Electrical, spectral, and chemical properties of 1.8 mev proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence journal, December 2003

Simulation of Radiation Effects in AlGaN/GaN HEMTs journal, December 2014

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors journal, October 2001

Radiation hardness of gallium nitride journal, December 2002

High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors journal, May 2002

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation journal, August 2014

Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films journal, January 2012

GaN-Based RF Power Devices and Amplifiers journal, February 2008

Stopping of energetic light ions in elemental matter journal, February 1999

Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures journal, March 2001

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs journal, August 2008

Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
journal, January 1999

Radiation effects in GaN materials and devices
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The Displacement of Atoms in Solids by Radiation
journal, January 1955

SRIM – The stopping and range of ions in matter (2010)
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Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
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Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy
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