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Title: Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Authors:
; ; ;
Publication Date:
OSTI Identifier:
1229572
Grant/Contract Number:
AC02- 05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 5; Related Information: CHORUS Timestamp: 2016-12-26 10:52:00; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English