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Title: Boost the electron mobility of solution-grown organic single crystals via reducing the amount of polar solvent residues

Abstract

Enhancing electron transport to match with the development in hole transport is critical for organic electronics in the future. As electron motion is susceptible to extrinsic factors, seeking these factors and avoiding their negative effects have become the central challenge. Here, the existence of polar solvent residues in solution-grown single-crystals of 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene is identified as a factor detrimental to electron motion. Field-effect transistors of the crystals exhibit electron mobility boosted by about 60% after the residues are removed. The average electron mobility reaches up to 8.0 ± 2.2 cm 2 V –1 s –1 with a highest value of 13.3 cm 2 V –1 s –1; these results are significantly higher than those obtained previously for the same molecule (1.0–5.0 cm 2 V –1 s –1). Furthermore, the achieved mobility is also higher than the maximum reported electron mobility for organic materials (11 cm 2 V –1 s –1). As a result, this work should greatly accelerate the advancement of organic electron-transporting materials.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [3];  [4];  [4];  [1];  [1]
  1. Zhejiang Univ., Hangzhou (China)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Zhejiang Univ., Hangzhou (China); Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. The Chinese Univ. of Hong Kong, Shatin (China)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1228855
Report Number(s):
BNL-108584-2015-JA
Journal ID: ISSN 2051-6347; MHAOAL; KC0403020
Grant/Contract Number:  
SC00112704
Resource Type:
Accepted Manuscript
Journal Name:
Materials Horizons
Additional Journal Information:
Journal Volume: 119; Journal Issue: 44; Journal ID: ISSN 2051-6347
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; organic semiconductor; Center for Functional Nanomaterials

Citation Formats

Xue, Guobiao, Xin, Huolin L., Wu, Jiake, Fan, Congcheng, Liu, Shuang, Huang, Zhuoting, Liu, Yujing, Shan, Bowen, Miao, Qian, Chen, Hongzheng, and Li, Hanying. Boost the electron mobility of solution-grown organic single crystals via reducing the amount of polar solvent residues. United States: N. p., 2015. Web. doi:10.1039/C5MH00190K.
Xue, Guobiao, Xin, Huolin L., Wu, Jiake, Fan, Congcheng, Liu, Shuang, Huang, Zhuoting, Liu, Yujing, Shan, Bowen, Miao, Qian, Chen, Hongzheng, & Li, Hanying. Boost the electron mobility of solution-grown organic single crystals via reducing the amount of polar solvent residues. United States. doi:10.1039/C5MH00190K.
Xue, Guobiao, Xin, Huolin L., Wu, Jiake, Fan, Congcheng, Liu, Shuang, Huang, Zhuoting, Liu, Yujing, Shan, Bowen, Miao, Qian, Chen, Hongzheng, and Li, Hanying. Thu . "Boost the electron mobility of solution-grown organic single crystals via reducing the amount of polar solvent residues". United States. doi:10.1039/C5MH00190K. https://www.osti.gov/servlets/purl/1228855.
@article{osti_1228855,
title = {Boost the electron mobility of solution-grown organic single crystals via reducing the amount of polar solvent residues},
author = {Xue, Guobiao and Xin, Huolin L. and Wu, Jiake and Fan, Congcheng and Liu, Shuang and Huang, Zhuoting and Liu, Yujing and Shan, Bowen and Miao, Qian and Chen, Hongzheng and Li, Hanying},
abstractNote = {Enhancing electron transport to match with the development in hole transport is critical for organic electronics in the future. As electron motion is susceptible to extrinsic factors, seeking these factors and avoiding their negative effects have become the central challenge. Here, the existence of polar solvent residues in solution-grown single-crystals of 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene is identified as a factor detrimental to electron motion. Field-effect transistors of the crystals exhibit electron mobility boosted by about 60% after the residues are removed. The average electron mobility reaches up to 8.0 ± 2.2 cm2 V–1 s–1 with a highest value of 13.3 cm2 V–1 s–1; these results are significantly higher than those obtained previously for the same molecule (1.0–5.0 cm2 V–1 s–1). Furthermore, the achieved mobility is also higher than the maximum reported electron mobility for organic materials (11 cm2 V–1 s–1). As a result, this work should greatly accelerate the advancement of organic electron-transporting materials.},
doi = {10.1039/C5MH00190K},
journal = {Materials Horizons},
number = 44,
volume = 119,
place = {United States},
year = {2015},
month = {10}
}

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Cited by: 21 works
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