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Title: Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

Abstract

Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D 0exp(–ΔE a/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D 0, and the activation energy, ΔE a, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.

Authors:
 [1];  [1];  [1];  [2];  [1]
  1. Chernivtsy National Univ., Chernivtsi (Ukraine)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
OSTI Identifier:
1228825
Report Number(s):
BNL-108079-2015-JA
Journal ID: ISSN 1547-7037; NN2001
Grant/Contract Number:  
SC00112704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Phase Equilibria and Diffusion
Additional Journal Information:
Journal Volume: 36; Journal Issue: 2; Journal ID: ISSN 1547-7037
Publisher:
ASM International
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING; CdTe; impurities diffusion; Arrhenius

Citation Formats

Shcherbak, L., Kopach, O., Fochuk, P., James, R. B., and Bolotnikov, A. E. Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals. United States: N. p., 2015. Web. doi:10.1007/s11669-015-0364-8.
Shcherbak, L., Kopach, O., Fochuk, P., James, R. B., & Bolotnikov, A. E. Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals. United States. doi:10.1007/s11669-015-0364-8.
Shcherbak, L., Kopach, O., Fochuk, P., James, R. B., and Bolotnikov, A. E. Wed . "Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals". United States. doi:10.1007/s11669-015-0364-8. https://www.osti.gov/servlets/purl/1228825.
@article{osti_1228825,
title = {Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals},
author = {Shcherbak, L. and Kopach, O. and Fochuk, P. and James, R. B. and Bolotnikov, A. E.},
abstractNote = {Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D0exp(–ΔEa/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D0, and the activation energy, ΔEa, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.},
doi = {10.1007/s11669-015-0364-8},
journal = {Journal of Phase Equilibria and Diffusion},
number = 2,
volume = 36,
place = {United States},
year = {2015},
month = {1}
}

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