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Title: Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

Abstract

Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2];  [1]
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  1. Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
  2. Royal Institute of Technology (KTH), Kista (Sweden)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Light-Material Interactions in Energy Conversion (LMI)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1371061
Alternate Identifier(s):
OSTI ID: 1228721
Grant/Contract Number:  
SC0001293
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 22; Related Information: LMI partners with California Institute of Technology (lead); Harvard University; University of Illinois, Urbana-Champaign; Lawrence Berkeley National Laboratory; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; solar (photovoltaic), solid state lighting, phonons, thermal conductivity, electrodes - solar, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)

Citation Formats

Zheng, Qiye, Kim, Honggyu, Zhang, Runyu, Sardela, Mauro, Zuo, Jianmin, Balaji, Manavaimaran, Lourdudoss, Sebastian, Sun, Yan -Ting, and Braun, Paul V. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4937273.
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Zheng, Qiye, Kim, Honggyu, Zhang, Runyu, Sardela, Mauro, Zuo, Jianmin, Balaji, Manavaimaran, Lourdudoss, Sebastian, Sun, Yan -Ting, & Braun, Paul V. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy. United States. https://doi.org/10.1063/1.4937273
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Zheng, Qiye, Kim, Honggyu, Zhang, Runyu, Sardela, Mauro, Zuo, Jianmin, Balaji, Manavaimaran, Lourdudoss, Sebastian, Sun, Yan -Ting, and Braun, Paul V. Mon . "Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy". United States. https://doi.org/10.1063/1.4937273. https://www.osti.gov/servlets/purl/1371061.
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@article{osti_1371061,
title = {Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy},
author = {Zheng, Qiye and Kim, Honggyu and Zhang, Runyu and Sardela, Mauro and Zuo, Jianmin and Balaji, Manavaimaran and Lourdudoss, Sebastian and Sun, Yan -Ting and Braun, Paul V.},
abstractNote = {Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.},
doi = {10.1063/1.4937273},
journal = {Journal of Applied Physics},
number = 22,
volume = 118,
place = {United States},
year = {Mon Dec 14 00:00:00 EST 2015},
month = {Mon Dec 14 00:00:00 EST 2015}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.4937273
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Cited by: 8 works
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Figures / Tables:

FIG. 1 FIG. 1: SEM cross section of (a) the silica colloidal crystal template and (b) as-grown GaInP through the template. Inset: magnified cross section image. (c) Top view and (d) cross section of 3D GaInP photonic crystal with colloidal template etched. Inset of (b): magnified image at the 3D mesostructured region.
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    Electrodeposited high strength, thermally stable spectrally selective rhenium nickel inverse opals
    journal, January 2017

    • Zhang, Runyu; Cohen, Joseph; Fan, Shanhui
    • Nanoscale, Vol. 9, Issue 31
    • DOI: 10.1039/c7nr03567e
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