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Title: In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Authors:
 [1]; ORCiD logo [2];  [2];  [3];  [3];  [4];  [2]
  1. Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  2. Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
  3. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  4. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1228673
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 118 Journal Issue: 3; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Kilcoyne, A. L. David, Tyliszczak, Tolek, Nishi, Yoshio, and Williams, R. Stanley. In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors. United States: N. p., 2015. Web. doi:10.1063/1.4926477.
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Kilcoyne, A. L. David, Tyliszczak, Tolek, Nishi, Yoshio, & Williams, R. Stanley. In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors. United States. doi:10.1063/1.4926477.
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Kilcoyne, A. L. David, Tyliszczak, Tolek, Nishi, Yoshio, and Williams, R. Stanley. Wed . "In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors". United States. doi:10.1063/1.4926477.
@article{osti_1228673,
title = {In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors},
author = {Kumar, Suhas and Graves, Catherine E. and Strachan, John Paul and Kilcoyne, A. L. David and Tyliszczak, Tolek and Nishi, Yoshio and Williams, R. Stanley},
abstractNote = {},
doi = {10.1063/1.4926477},
journal = {Journal of Applied Physics},
number = 3,
volume = 118,
place = {United States},
year = {2015},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4926477

Citation Metrics:
Cited by: 10 works
Citation information provided by
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Works referenced in this record:

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
journal, November 2011

  • Miao, Feng; Strachan, John Paul; Yang, J. Joshua
  • Advanced Materials, Vol. 23, Issue 47, p. 5633-5640
  • DOI: 10.1002/adma.201103379

Direct Identification of the Conducting Channels in a Functioning Memristive Device
journal, June 2010

  • Strachan, John Paul; Pickett, Matthew D.; Yang, J. Joshua
  • Advanced Materials, Vol. 22, Issue 32, p. 3573-3577
  • DOI: 10.1002/adma.201000186

Metal–Oxide RRAM
journal, June 2012

  • Wong, H.-S. Philip; Lee, Heng-Yuan; Yu, Shimeng
  • Proceedings of the IEEE, Vol. 100, Issue 6, p. 1951-1970
  • DOI: 10.1109/JPROC.2012.2190369

Memristive devices for computing
journal, January 2013

  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240