Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

doi:10.1063/1.4923358

Title: Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

Abstract

In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V₂) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

Authors:

^[1]; Seager, C. H. ^[1]; Lang, D. V. ^[1]; Campbell, J. M. ^[1]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Thu Jul 02 00:00:00 EDT 2015

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1239986

Alternate Identifier(s):: OSTI ID: 1228652

Report Number(s):: SAND-2015-5982J
Journal ID: ISSN 0021-8979; JAPIAU; 618345

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 118; Journal Issue: 1; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; deep level transient spectroscopy; electric fields; transistors; carrier density; charge injection

Citation Formats


                    Fleming, R. M., Seager, C. H., Lang, D. V., and Campbell, J. M. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4923358.

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                    Fleming, R. M., Seager, C. H., Lang, D. V., & Campbell, J. M. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors.  United States.  https://doi.org/10.1063/1.4923358

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                    Fleming, R. M., Seager, C. H., Lang, D. V., and Campbell, J. M. Thu .  
"Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors".  United States.  https://doi.org/10.1063/1.4923358.  https://www.osti.gov/servlets/purl/1239986.

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@article{osti_1239986,

  title        = {Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors},

  author       = {Fleming, R. M. and Seager, C. H. and Lang, D. V. and Campbell, J. M.},

  abstractNote = {In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.},

  doi          = {10.1063/1.4923358},

  journal      = {Journal of Applied Physics},

  number       = 1,

  volume       = 118,

  place        = {United States},

  year         = {Thu Jul 02 00:00:00 EDT 2015},

  month        = {Thu Jul 02 00:00:00 EDT 2015}

}

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Works referenced in this record:

Statistics of the Recombinations of Holes and Electrons
journal, September 1952

Shockley, W.; Read, W. T.
Physical Review, Vol. 87, Issue 5
DOI: 10.1103/PhysRev.87.835

Electron-Hole Recombination in Germanium
journal, July 1952

Hall, R. N.
Physical Review, Vol. 87, Issue 2
DOI: 10.1103/PhysRev.87.387

Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
journal, July 1974

Lang, D. V.
Journal of Applied Physics, Vol. 45, Issue 7
DOI: 10.1063/1.1663719

Capacitance Transient Spectroscopy
journal, August 1977

Miller, G. L.; Lang, D. V.; Kimerling, L. C.
Annual Review of Materials Science, Vol. 7, Issue 1
DOI: 10.1146/annurev.ms.07.080177.002113

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
journal, January 1977

Henry, C. H.; Lang, D. V.
Physical Review B, Vol. 15, Issue 2
DOI: 10.1103/PhysRevB.15.989

Electron temperature dependences of nonradiative multiphonon hot-electron capture coefficients of deep traps in semiconductors—I
journal, February 1984

Pässler, R.
Solid-State Electronics, Vol. 27, Issue 2
DOI: 10.1016/0038-1101(84)90107-2

A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon
journal, November 1992

Schenk, A.
Solid-State Electronics, Vol. 35, Issue 11
DOI: 10.1016/0038-1101(92)90184-E

Complex nature of gold-related deep levels in silicon
journal, October 1980

Lang, D. V.; Grimmeiss, H. G.; Meijer, E.
Physical Review B, Vol. 22, Issue 8
DOI: 10.1103/PhysRevB.22.3917

Accurate determination of the free carrier capture kinetics of deep traps by space‐charge methods
journal, May 1984

Pons, D.
Journal of Applied Physics, Vol. 55, Issue 10
DOI: 10.1063/1.332914

Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon
journal, August 2011

Malmbekk, Helge; Vines, Lasse; Monakhov, Edouard V.
Solid State Phenomena, Vol. 178-179
DOI: 10.4028/www.scientific.net/SSP.178-179.192

Derivation of the High Field Semiconductor Equations
book, January 1994

Hagan, P. S.; Cox, R. W.; Wagner, B. A.
Semiconductors
DOI: 10.1007/978-1-4613-8410-6_9

Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field
journal, May 2002

Arora, Vijay K.
Applied Physics Letters, Vol. 80, Issue 20
DOI: 10.1063/1.1480119

A review of some charge transport properties of silicon
journal, February 1977

Jacoboni, C.; Canali, C.; Ottaviani, G.
Solid-State Electronics, Vol. 20, Issue 2, p. 77-89
DOI: 10.1016/0038-1101(77)90054-5

Electron velocity in Si and GaAs at very high electric fields
journal, November 1980

Smith, P. M.; Inoue, M.; Frey, Jeffrey
Applied Physics Letters, Vol. 37, Issue 9
DOI: 10.1063/1.92078

Photocapacitance Studies of the Oxygen Donor in GaP. II. Capture Cross Sections
journal, March 1973

Henry, C. H.; Kukimoto, H.; Miller, G. L.
Physical Review B, Vol. 7, Issue 6
DOI: 10.1103/PhysRevB.7.2499

Hydrogen-related electron traps in proton-bombarded float zone silicon
journal, October 1989

Svensson, B. G.; Hallén, A.; Sundqvist, B. U. R.
Materials Science and Engineering: B, Vol. 4, Issue 1-4
DOI: 10.1016/0921-5107(89)90259-6

Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si
journal, January 2004

Auret, F. Danie; Deenapanray, Prakash N. K.
Critical Reviews in Solid State and Materials Sciences, Vol. 29, Issue 1
DOI: 10.1080/10408430490442458

Ionizing Radiation Effects in MOS Oxides
book, January 2000

Oldham, Timothy R.
International Series on Advances in Solid State Electronics and Technology
DOI: 10.1142/9789812813640

Formation and origin of the dominating electron trap in irradiated $p$ -type silicon
journal, August 2008

Vines, Lasse; Monakhov, E. V.; Kuznetsov, A. Yu.
Physical Review B, Vol. 78, Issue 8
DOI: 10.1103/PhysRevB.78.085205

Lifetime in proton irradiated silicon
journal, January 1996

Hallén, Anders; Keskitalo, Niclas; Masszi, Ferenc
Journal of Applied Physics, Vol. 79, Issue 8
DOI: 10.1063/1.361816

Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors
journal, January 1977

Lefèvre, H.; Schulz, M.
Applied Physics, Vol. 12, Issue 1
DOI: 10.1007/BF00900067

Defect production and lifetime control in electron and γ‐irradiated silicon
journal, August 1982

Brotherton, S. D.; Bradley, P.
Journal of Applied Physics, Vol. 53, Issue 8
DOI: 10.1063/1.331460

Vacancy and interstitial depth profiles in ion-implanted silicon
journal, January 2003

Lévêque, P.; Nielsen, H. Kortegaard; Pellegrino, P.
Journal of Applied Physics, Vol. 93, Issue 2
DOI: 10.1063/1.1528304

New Developments in Defect Studies in Semiconductors
journal, January 1976

Kimerling, L. C.
IEEE Transactions on Nuclear Science, Vol. 23, Issue 6
DOI: 10.1109/TNS.1976.4328529

Works referencing / citing this record:

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency
journal, June 2018

Wen, Xixing; Chen, Chao; Lu, Shuaicheng
Nature Communications, Vol. 9, Issue 1
DOI: 10.1038/s41467-018-04634-6

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency
journal, June 2018

Wen, Xixing; Chen, Chao; Lu, Shuaicheng
Nature Communications, Vol. 9, Issue 1
DOI: 10.1038/s41467-018-04634-6

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Similar Records

Title: Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

Abstract

Citation Formats

Statistics of the Recombinations of Holes and Electrons journal, September 1952

Electron-Hole Recombination in Germanium journal, July 1952

Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors journal, July 1974

Capacitance Transient Spectroscopy journal, August 1977

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP journal, January 1977

Electron temperature dependences of nonradiative multiphonon hot-electron capture coefficients of deep traps in semiconductors—I journal, February 1984

A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon journal, November 1992

Complex nature of gold-related deep levels in silicon journal, October 1980

Accurate determination of the free carrier capture kinetics of deep traps by space‐charge methods journal, May 1984

Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon journal, August 2011

Derivation of the High Field Semiconductor Equations book, January 1994

Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field journal, May 2002

A review of some charge transport properties of silicon journal, February 1977

Electron velocity in Si and GaAs at very high electric fields journal, November 1980

Photocapacitance Studies of the Oxygen Donor in GaP. II. Capture Cross Sections journal, March 1973

Hydrogen-related electron traps in proton-bombarded float zone silicon journal, October 1989

Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si journal, January 2004

Ionizing Radiation Effects in MOS Oxides book, January 2000

Formation and origin of the dominating electron trap in irradiated p -type silicon journal, August 2008

Lifetime in proton irradiated silicon journal, January 1996

Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors journal, January 1977

Defect production and lifetime control in electron and γ‐irradiated silicon journal, August 1982

Vacancy and interstitial depth profiles in ion-implanted silicon journal, January 2003

New Developments in Defect Studies in Semiconductors journal, January 1976

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency journal, June 2018

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency journal, June 2018

Statistics of the Recombinations of Holes and Electrons
journal, September 1952

Electron-Hole Recombination in Germanium
journal, July 1952

Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
journal, July 1974

Capacitance Transient Spectroscopy
journal, August 1977

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
journal, January 1977

Electron temperature dependences of nonradiative multiphonon hot-electron capture coefficients of deep traps in semiconductors—I
journal, February 1984

A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon
journal, November 1992

Complex nature of gold-related deep levels in silicon
journal, October 1980

Accurate determination of the free carrier capture kinetics of deep traps by space‐charge methods
journal, May 1984

Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon
journal, August 2011

Derivation of the High Field Semiconductor Equations
book, January 1994

Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field
journal, May 2002

A review of some charge transport properties of silicon
journal, February 1977

Electron velocity in Si and GaAs at very high electric fields
journal, November 1980

Photocapacitance Studies of the Oxygen Donor in GaP. II. Capture Cross Sections
journal, March 1973

Hydrogen-related electron traps in proton-bombarded float zone silicon
journal, October 1989

Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si
journal, January 2004

Ionizing Radiation Effects in MOS Oxides
book, January 2000

Formation and origin of the dominating electron trap in irradiated $p$ -type silicon
journal, August 2008

Lifetime in proton irradiated silicon
journal, January 1996

Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors
journal, January 1977

Defect production and lifetime control in electron and γ‐irradiated silicon
journal, August 1982

Vacancy and interstitial depth profiles in ion-implanted silicon
journal, January 2003

New Developments in Defect Studies in Semiconductors
journal, January 1976

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency
journal, June 2018

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency
journal, June 2018