H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells
- Authors:
-
- Imec, Kapeldreef 75, B-3001 Leuven, Belgium
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1228568
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 117 Journal Issue: 12; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., and Jurczak, M. H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. United States: N. p., 2015.
Web. doi:10.1063/1.4915946.
Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., & Jurczak, M. H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. United States. https://doi.org/10.1063/1.4915946
Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., and Jurczak, M. Mon .
"H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells". United States. https://doi.org/10.1063/1.4915946.
@article{osti_1228568,
title = {H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells},
author = {Goux, L. and Kim, J. Y. and Magyari-Kope, B. and Nishi, Y. and Redolfi, A. and Jurczak, M.},
abstractNote = {},
doi = {10.1063/1.4915946},
journal = {Journal of Applied Physics},
number = 12,
volume = 117,
place = {United States},
year = {Mon Mar 23 00:00:00 EDT 2015},
month = {Mon Mar 23 00:00:00 EDT 2015}
}
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https://doi.org/10.1063/1.4915946
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Works referenced in this record:
Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO 2 , NiO and Pr 0.7 Ca 0.3 MnO 3
journal, May 2011
- Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon
- Nanotechnology, Vol. 22, Issue 25
Projector augmented-wave method
journal, December 1994
- Blöchl, P. E.
- Physical Review B, Vol. 50, Issue 24, p. 17953-17979
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996
- Kresse, G.; Furthmüller, J.
- Computational Materials Science, Vol. 6, Issue 1, p. 15-50
Asymmetry and Switching Phenomenology in TiN\(Al2O3)\HfO2\Hf Systems
journal, January 2012
- Goux, L.; Fantini, A.; Govoreanu, B.
- ECS Solid State Letters, Vol. 1, Issue 4
Role of the anode material in the unipolar switching of TiN\NiO\Ni cells
journal, February 2013
- Goux, L.; Degraeve, R.; Meersschaut, J.
- Journal of Applied Physics, Vol. 113, Issue 5
Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies
journal, March 1984
- Sah, Chih‐Tang; Sun, Jack Yuan‐Chen; Tzou, Joseph Jeng‐Tao
- Journal of Applied Physics, Vol. 55, Issue 6
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999
- Kresse, G.; Joubert, D.
- Physical Review B, Vol. 59, Issue 3, p. 1758-1775
On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems
journal, January 2010
- Goux, L.; Chen, Y. -Y; Pantisano, L.
- Electrochemical and Solid-State Letters, Vol. 13, Issue 6
Three-dimensional 4F2 ReRAM cell with CMOS logic compatible process
conference, December 2010
- Ching-Hua Wang,
- 2010 IEEE International Electron Devices Meeting (IEDM), 2010 International Electron Devices Meeting
An inelastic neutron scattering study of the proton dynamics in γ-MnO2
journal, January 1991
- Fillaux, F.; Ouboumour, H.; Tomkinson, J.
- Chemical Physics, Vol. 149, Issue 3
10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
conference, December 2011
- Govoreanu, B.; Kar, G. S.; Chen, Y-Y.
- 2011 IEEE International Electron Devices Meeting (IEDM), 2011 International Electron Devices Meeting
Hydrogen as a Cause of Doping in Zinc Oxide
journal, July 2000
- Van de Walle, Chris G.
- Physical Review Letters, Vol. 85, Issue 5
Defects and transport properties of metal oxides
journal, August 1995
- Kofstad, Per
- Oxidation of Metals, Vol. 44, Issue 1-2
Impact of hydrogen on the electroforming of Pr0.7 Ca0.3 MnO3 resistance-change memory devices
conference, October 2009
- Tendulkara, M. P.; Jameson, J. R.; Griffin, P. B.
- 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS 2009), 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS)
Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells
journal, January 2014
- Goux, L.; Fantini, A.; Chen, Y. Y.
- ECS Solid State Letters, Vol. 3, Issue 11
Oxide-based protonic conductors: point defects and transport properties
journal, December 2001
- Bonanos, N.
- Solid State Ionics, Vol. 145, Issue 1-4
Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment
journal, November 2008
- Efthymiou, E.; Bernardini, S.; Zhang, J. F.
- Thin Solid Films, Vol. 517, Issue 1
Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$/PEALD TiN RRAM Device
journal, April 2012
- Chen, Yang Yin; Goux, L.; Swerts, J.
- IEEE Electron Device Letters, Vol. 33, Issue 4
Distribution of hydrogen in the NPL standard ta2O5 films
journal, July 1986
- Bishop, H. E.
- Surface and Interface Analysis, Vol. 9, Issue 2
Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation
conference, June 2012
- Ninomiya, T.; Takagi, T.; Wei, Z.
- 2012 IEEE Symposium on VLSI Technology, 2012 Symposium on VLSI Technology (VLSIT)
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011
- Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
- Nature Materials, Vol. 10, Issue 8, p. 625-630
Proton Conductivity: Materials and Applications
journal, January 1996
- Kreuer, Klaus-Dieter
- Chemistry of Materials, Vol. 8, Issue 3
Electronic correlation effects in reduced rutile within the method
journal, September 2010
- Park, Seong-Geon; Magyari-Köpe, Blanka; Nishi, Yoshio
- Physical Review B, Vol. 82, Issue 11
Electronic structure and stability of low symmetry Ta 2 O 5 polymorphs : Electronic structure and stability of low symmetry Ta
journal, May 2014
- Kim, Ja-Yong; Magyari-Köpe, Blanka; Lee, Kee-Jeung
- physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 6
Concentration and transport of protons in oxides
journal, October 1997
- Norby, Truls; Larring, Yngve
- Current Opinion in Solid State and Materials Science, Vol. 2, Issue 5