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Title: Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

Authors:
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Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 23; Related Information: CHORUS Timestamp: 2016-12-29 10:51:46; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1228438