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Title: Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ; ORCiD logo [2] ;  [1] ;  [1]
  1. Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
  2. Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Publication Date:
Grant/Contract Number:
ER 46940-DE-SC0010597
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 107 Journal Issue: 3; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1226778

Cheng, Bin, Wang, Peng, Pan, Cheng, Miao, Tengfei, Wu, Yong, Taniguchi, T., Watanabe, K., Lau, C. N., and Bockrath, M.. Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride. United States: N. p., Web. doi:10.1063/1.4926918.
Cheng, Bin, Wang, Peng, Pan, Cheng, Miao, Tengfei, Wu, Yong, Taniguchi, T., Watanabe, K., Lau, C. N., & Bockrath, M.. Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride. United States. doi:10.1063/1.4926918.
Cheng, Bin, Wang, Peng, Pan, Cheng, Miao, Tengfei, Wu, Yong, Taniguchi, T., Watanabe, K., Lau, C. N., and Bockrath, M.. 2015. "Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride". United States. doi:10.1063/1.4926918.
@article{osti_1226778,
title = {Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride},
author = {Cheng, Bin and Wang, Peng and Pan, Cheng and Miao, Tengfei and Wu, Yong and Taniguchi, T. and Watanabe, K. and Lau, C. N. and Bockrath, M.},
abstractNote = {},
doi = {10.1063/1.4926918},
journal = {Applied Physics Letters},
number = 3,
volume = 107,
place = {United States},
year = {2015},
month = {7}
}

Works referenced in this record:

Van der Waals heterostructures
journal, July 2013
  • Geim, A. K.; Grigorieva, I. V.
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  • DOI: 10.1038/nature12385

Boron nitride substrates for high-quality graphene electronics
journal, August 2010
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  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172

Raman Spectrum of Graphene and Graphene Layers
journal, October 2006

Raman spectroscopy in graphene
journal, April 2009