III-V/Si wafer bonding using transparent, conductive oxide interlayers
- Authors:
-
[1];
- National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401, USA
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1226769
- Grant/Contract Number:
- EE00025783
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 106 Journal Issue: 26; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Tamboli, Adele C., van Hest, Maikel F. A. M., Steiner, Myles A., Essig, Stephanie, Perl, Emmett E., Norman, Andrew G., Bosco, Nick, and Stradins, Paul. III-V/Si wafer bonding using transparent, conductive oxide interlayers. United States: N. p., 2015.
Web. doi:10.1063/1.4923444.
Tamboli, Adele C., van Hest, Maikel F. A. M., Steiner, Myles A., Essig, Stephanie, Perl, Emmett E., Norman, Andrew G., Bosco, Nick, & Stradins, Paul. III-V/Si wafer bonding using transparent, conductive oxide interlayers. United States. https://doi.org/10.1063/1.4923444
Tamboli, Adele C., van Hest, Maikel F. A. M., Steiner, Myles A., Essig, Stephanie, Perl, Emmett E., Norman, Andrew G., Bosco, Nick, and Stradins, Paul. Thu .
"III-V/Si wafer bonding using transparent, conductive oxide interlayers". United States. https://doi.org/10.1063/1.4923444.
@article{osti_1226769,
title = {III-V/Si wafer bonding using transparent, conductive oxide interlayers},
author = {Tamboli, Adele C. and van Hest, Maikel F. A. M. and Steiner, Myles A. and Essig, Stephanie and Perl, Emmett E. and Norman, Andrew G. and Bosco, Nick and Stradins, Paul},
abstractNote = {},
doi = {10.1063/1.4923444},
journal = {Applied Physics Letters},
number = 26,
volume = 106,
place = {United States},
year = {Thu Jul 02 00:00:00 EDT 2015},
month = {Thu Jul 02 00:00:00 EDT 2015}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4923444
https://doi.org/10.1063/1.4923444
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 21 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells
journal, May 2014
- García-Tabarés, Elisa; Rey-Stolle, Ignacio
- Solar Energy Materials and Solar Cells, Vol. 124
Supercharging Silicon Solar Cell Performance by Means of Multijunction Concept
journal, May 2015
- Almansouri, Ibraheem; Ho-Baillie, Anita; Bremner, Stephen P.
- IEEE Journal of Photovoltaics, Vol. 5, Issue 3
Light trapping in thin-film solar cells via scattering by nanostructured antireflection coatings
journal, July 2013
- Li, X. H.; Li, P. C.; Hu, D. Z.
- Journal of Applied Physics, Vol. 114, Issue 4
The electrical, optical and structural properties of In x Zn 1− x O y (0 x 1) thin films by combinatorial techniques
journal, December 2004
- Taylor, Matthew P.; Readey, Dennis W.; Teplin, Charles W.
- Measurement Science and Technology, Vol. 16, Issue 1
Room temperature GaAsSi and InPSi wafer direct bonding by the surface activated bonding method
journal, January 1997
- Chung, Taek Ryong; Yang, Liu; Hosoda, Naoe
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 121, Issue 1-4
Low temperature Si/Si wafer direct bonding using a plasma activated method
journal, April 2013
- Li, Dong-ling; Shang, Zheng-guo; Wang, Sheng-qiang
- Journal of Zhejiang University SCIENCE C, Vol. 14, Issue 4
Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
journal, April 2013
- Grassman, T. J.; Carlin, J. A.; Galiana, B.
- Applied Physics Letters, Vol. 102, Issue 14
Bonding III-V material to SOI with transparent and conductive ZnO film at low temperature
journal, January 2014
- Huang, Xinnan; Gao, Yonghao; Xu, Xingsheng
- Optics Express, Vol. 22, Issue 12
III-V/silicon photonics for on-chip and intra-chip optical interconnects
journal, January 2010
- Roelkens, G.; Liu, L.; Liang, D.
- Laser & Photonics Reviews, Vol. 4, Issue 6
Wafer-Bonded GaInP/GaAs//Si Solar Cells With 30% Efficiency Under Concentrated Sunlight
journal, May 2015
- Essig, Stephanie; Benick, Jan; Schachtner, Michael
- IEEE Journal of Photovoltaics, Vol. 5, Issue 3
Hybrid Integrated Platforms for Silicon Photonics
journal, March 2010
- Liang, Di; Roelkens, Gunther; Baets, Roel
- Materials, Vol. 3, Issue 3
Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices
journal, February 1991
- Yamaguchi, Masafumi
- Journal of Materials Research, Vol. 6, Issue 2
Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity
journal, May 2013
- Essig, S.; Moutanabbir, O.; Wekkeli, A.
- Journal of Applied Physics, Vol. 113, Issue 20
Low-Temperature Direct Bonding of Borosilicate, Fused Silica, and Functional Coatings
conference, January 2010
- Eichler, Marko; Michel, Benedikt; Hennecke, Philipp
- 218th ECS Meeting, ECS Transactions
Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer
journal, January 1999
- Choi, W. B.; Ju, B. K.; Lee, Y. H.
- Journal of Materials Science, Vol. 34, Issue 19, p. 4711-4717
Polar-on-nonpolar epitaxy
journal, February 1987
- Kroemer, Herbert
- Journal of Crystal Growth, Vol. 81, Issue 1-4
Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers
journal, May 2005
- Liu, Po-Chun; Hou, Chin-Yuan; Wu, YewChung-Sermon
- Thin Solid Films, Vol. 478, Issue 1-2
Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells
journal, July 2013
- Geisz, J. F.; Steiner, M. A.; García, I.
- Applied Physics Letters, Vol. 103, Issue 4
The Remarkable Thermal Stability of Amorphous In-Zn-O Transparent Conductors
journal, October 2008
- Taylor, Matthew P.; Readey, Dennis W.; van Hest, Maikel F. A. M.
- Advanced Functional Materials, Vol. 18, Issue 20
Electrically pumped hybrid AlGaInAs-silicon evanescent laser
journal, January 2006
- Fang, Alexander W.; Park, Hyundai; Cohen, Oded
- Optics Express, Vol. 14, Issue 20
Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells
journal, November 2013
- Häussler, Dietrich; Houben, Lothar; Essig, Stephanie
- Ultramicroscopy, Vol. 134
Fabrication of GaInP/GaAs//Si Solar Cells by Surface Activated Direct Wafer Bonding
journal, October 2013
- Derendorf, Karen; Essig, Stephanie; Oliva, Eduard
- IEEE Journal of Photovoltaics, Vol. 3, Issue 4
Anodic Bonding of Transparent Conductive Oxide Coated Silicon Wafer to Glass Substrate for Solar Cell Applications
journal, January 2013
- Yuda, Yohei; Koida, Takashi; Kaneko, Tetsuya
- Applied Physics Express, Vol. 6, Issue 1