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Title: Profiling the local carrier concentration across a semiconductor quantum dot

Authors:
ORCiD logo [1] ;  [1] ;  [2] ; ORCiD logo [3]
  1. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
  2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
  3. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
Publication Date:
Grant/Contract Number:
FG02-06ER46339; PI0000012; SC0000957
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 106 Journal Issue: 19; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1226741

Walrath, J. C., Lin, Yen-Hsiang, Huang, S., and Goldman, R. S.. Profiling the local carrier concentration across a semiconductor quantum dot. United States: N. p., Web. doi:10.1063/1.4919919.
Walrath, J. C., Lin, Yen-Hsiang, Huang, S., & Goldman, R. S.. Profiling the local carrier concentration across a semiconductor quantum dot. United States. doi:10.1063/1.4919919.
Walrath, J. C., Lin, Yen-Hsiang, Huang, S., and Goldman, R. S.. 2015. "Profiling the local carrier concentration across a semiconductor quantum dot". United States. doi:10.1063/1.4919919.
@article{osti_1226741,
title = {Profiling the local carrier concentration across a semiconductor quantum dot},
author = {Walrath, J. C. and Lin, Yen-Hsiang and Huang, S. and Goldman, R. S.},
abstractNote = {},
doi = {10.1063/1.4919919},
journal = {Applied Physics Letters},
number = 19,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}