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Title: Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3];  [1];  [1];  [1]; ORCiD logo [3];  [1];  [1];  [1]
  1. Princeton Institute for the Science and Technology of Materials (PRISM), Princeton, New Jersey 08544, USA, Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
  2. Princeton Institute for the Science and Technology of Materials (PRISM), Princeton, New Jersey 08544, USA
  3. Princeton Institute for the Science and Technology of Materials (PRISM), Princeton, New Jersey 08544, USA, Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1226725
Grant/Contract Number:  
EE0005315
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 106 Journal Issue: 12; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Nagamatsu, Ken A., Avasthi, Sushobhan, Sahasrabudhe, Girija, Man, Gabriel, Jhaveri, Janam, Berg, Alexander H., Schwartz, Jeffrey, Kahn, Antoine, Wagner, Sigurd, and Sturm, James C. Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell. United States: N. p., 2015. Web. doi:10.1063/1.4916540.
Nagamatsu, Ken A., Avasthi, Sushobhan, Sahasrabudhe, Girija, Man, Gabriel, Jhaveri, Janam, Berg, Alexander H., Schwartz, Jeffrey, Kahn, Antoine, Wagner, Sigurd, & Sturm, James C. Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell. United States. https://doi.org/10.1063/1.4916540
Nagamatsu, Ken A., Avasthi, Sushobhan, Sahasrabudhe, Girija, Man, Gabriel, Jhaveri, Janam, Berg, Alexander H., Schwartz, Jeffrey, Kahn, Antoine, Wagner, Sigurd, and Sturm, James C. Thu . "Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell". United States. https://doi.org/10.1063/1.4916540.
@article{osti_1226725,
title = {Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell},
author = {Nagamatsu, Ken A. and Avasthi, Sushobhan and Sahasrabudhe, Girija and Man, Gabriel and Jhaveri, Janam and Berg, Alexander H. and Schwartz, Jeffrey and Kahn, Antoine and Wagner, Sigurd and Sturm, James C.},
abstractNote = {},
doi = {10.1063/1.4916540},
journal = {Applied Physics Letters},
number = 12,
volume = 106,
place = {United States},
year = {Thu Mar 26 00:00:00 EDT 2015},
month = {Thu Mar 26 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4916540

Citation Metrics:
Cited by: 107 works
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