The origin of deep-level impurity transitions in hexagonal boron nitride
- Authors:
-
- Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1226689
- Grant/Contract Number:
- FG02-09ER46552
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 106 Journal Issue: 2; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Du, X. Z., Li, J., Lin, J. Y., and Jiang, H. X. The origin of deep-level impurity transitions in hexagonal boron nitride. United States: N. p., 2015.
Web. doi:10.1063/1.4905908.
Du, X. Z., Li, J., Lin, J. Y., & Jiang, H. X. The origin of deep-level impurity transitions in hexagonal boron nitride. United States. https://doi.org/10.1063/1.4905908
Du, X. Z., Li, J., Lin, J. Y., and Jiang, H. X. Tue .
"The origin of deep-level impurity transitions in hexagonal boron nitride". United States. https://doi.org/10.1063/1.4905908.
@article{osti_1226689,
title = {The origin of deep-level impurity transitions in hexagonal boron nitride},
author = {Du, X. Z. and Li, J. and Lin, J. Y. and Jiang, H. X.},
abstractNote = {},
doi = {10.1063/1.4905908},
journal = {Applied Physics Letters},
number = 2,
volume = 106,
place = {United States},
year = {Tue Jan 13 00:00:00 EST 2015},
month = {Tue Jan 13 00:00:00 EST 2015}
}
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https://doi.org/10.1063/1.4905908
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