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Title: The origin of deep-level impurity transitions in hexagonal boron nitride

Authors:
 [1];  [1];  [1];  [1]
  1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1226689
Grant/Contract Number:  
FG02-09ER46552
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 106 Journal Issue: 2; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Du, X. Z., Li, J., Lin, J. Y., and Jiang, H. X. The origin of deep-level impurity transitions in hexagonal boron nitride. United States: N. p., 2015. Web. doi:10.1063/1.4905908.
Du, X. Z., Li, J., Lin, J. Y., & Jiang, H. X. The origin of deep-level impurity transitions in hexagonal boron nitride. United States. doi:10.1063/1.4905908.
Du, X. Z., Li, J., Lin, J. Y., and Jiang, H. X. Tue . "The origin of deep-level impurity transitions in hexagonal boron nitride". United States. doi:10.1063/1.4905908.
@article{osti_1226689,
title = {The origin of deep-level impurity transitions in hexagonal boron nitride},
author = {Du, X. Z. and Li, J. and Lin, J. Y. and Jiang, H. X.},
abstractNote = {},
doi = {10.1063/1.4905908},
journal = {Applied Physics Letters},
number = 2,
volume = 106,
place = {United States},
year = {2015},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4905908

Citation Metrics:
Cited by: 18 works
Citation information provided by
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Works referenced in this record:

Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
journal, May 2005

  • Nam, K. B.; Nakarmi, M. L.; Lin, J. Y.
  • Applied Physics Letters, Vol. 86, Issue 22, Article No. 222108
  • DOI: 10.1063/1.1943489