DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics

Authors:
 [1];  [2];  [3];  [2];  [3];  [1];  [2];  [3];  [1]
  1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
  3. Harvard University, Cambridge, Massachusetts 02139, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1226642
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 105 Journal Issue: 26; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Brandt, Riley E., Young, Matthew, Park, Helen Hejin, Dameron, Arrelaine, Chua, Danny, Lee, Yun Seog, Teeter, Glenn, Gordon, Roy G., and Buonassisi, Tonio. Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics. United States: N. p., 2014. Web. doi:10.1063/1.4905180.
Brandt, Riley E., Young, Matthew, Park, Helen Hejin, Dameron, Arrelaine, Chua, Danny, Lee, Yun Seog, Teeter, Glenn, Gordon, Roy G., & Buonassisi, Tonio. Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics. United States. https://doi.org/10.1063/1.4905180
Brandt, Riley E., Young, Matthew, Park, Helen Hejin, Dameron, Arrelaine, Chua, Danny, Lee, Yun Seog, Teeter, Glenn, Gordon, Roy G., and Buonassisi, Tonio. Mon . "Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics". United States. https://doi.org/10.1063/1.4905180.
@article{osti_1226642,
title = {Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics},
author = {Brandt, Riley E. and Young, Matthew and Park, Helen Hejin and Dameron, Arrelaine and Chua, Danny and Lee, Yun Seog and Teeter, Glenn and Gordon, Roy G. and Buonassisi, Tonio},
abstractNote = {},
doi = {10.1063/1.4905180},
journal = {Applied Physics Letters},
number = 26,
volume = 105,
place = {United States},
year = {Mon Dec 29 00:00:00 EST 2014},
month = {Mon Dec 29 00:00:00 EST 2014}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4905180

Citation Metrics:
Cited by: 76 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Structural and Electrical Characterizations of Electrodeposited p-Type Semiconductor Cu[sub 2]O Films
journal, January 2005

  • Mizuno, Kotaro; Izaki, Masanobu; Murase, Kuniaki
  • Journal of The Electrochemical Society, Vol. 152, Issue 4
  • DOI: 10.1149/1.1862478

Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing
journal, April 2013

  • Hejin Park, Helen; Heasley, Rachel; Gordon, Roy G.
  • Applied Physics Letters, Vol. 102, Issue 13
  • DOI: 10.1063/1.4800928

The origin of electrical property deterioration with increasing Mg concentration in ZnMgO:Ga
journal, February 2012


Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation
journal, March 2001

  • Minemoto, Takashi; Matsui, Takuya; Takakura, Hideyuki
  • Solar Energy Materials and Solar Cells, Vol. 67, Issue 1-4
  • DOI: 10.1016/S0927-0248(00)00266-X

Work function of ITO substrates and band-offsets at the TPD/ITO interface determined by photoelectron spectroscopy
journal, June 2000


Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells
journal, May 2014

  • Lee, Yun Seog; Chua, Danny; Brandt, Riley E.
  • Advanced Materials, Vol. 26, Issue 27
  • DOI: 10.1002/adma.201401054

Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials
journal, June 1980


The electrical properties and the interfaces of Cu2O/ZnO/ITO p–i–n heterojunction
journal, August 2004


Absorption coefficient of bulk and thin film Cu2O
journal, October 2011

  • Malerba, Claudia; Biccari, Francesco; Leonor Azanza Ricardo, Cristy
  • Solar Energy Materials and Solar Cells, Vol. 95, Issue 10
  • DOI: 10.1016/j.solmat.2011.05.047

Improved Cu 2 O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction
journal, April 2014

  • Lee, Sang Woon; Lee, Yun Seog; Heo, Jaeyeong
  • Advanced Energy Materials, Vol. 4, Issue 11
  • DOI: 10.1002/aenm.201301916

Strong Valence-Band Offset Bowing of ZnO 1 x S x Enhances p -Type Nitrogen Doping of ZnO-like Alloys
journal, October 2006


Effects of Mg composition on open circuit voltage of Cu2O–MgxZn1−xO heterojunction solar cells
journal, January 2012


The band alignment of Cu 2 O/ZnO and Cu 2 O/GaN heterostructures
journal, February 2012

  • Kramm, B.; Laufer, A.; Reppin, D.
  • Applied Physics Letters, Vol. 100, Issue 9
  • DOI: 10.1063/1.3685719

Intrinsic limitations to the doping of wide-gap semiconductors
journal, January 2001


Optical Properties and Electronic Structure of Amorphous Germanium
journal, January 1966


High-Efficiency Cu 2 O-Based Heterojunction Solar Cells Fabricated Using a Ga 2 O 3 Thin Film as N-Type Layer
journal, April 2013

  • Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro
  • Applied Physics Express, Vol. 6, Issue 4
  • DOI: 10.7567/APEX.6.044101

A recombination analysis of Cu(In,Ga)Se2 solar cells with low and high Ga compositions
journal, May 2014

  • Li, Jian V.; Grover, Sachit; Contreras, Miguel A.
  • Solar Energy Materials and Solar Cells, Vol. 124, p. 143-149
  • DOI: 10.1016/j.solmat.2014.01.047

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells
journal, January 2013

  • Lee, Yun Seog; Heo, Jaeyeong; Siah, Sin Cheng
  • Energy & Environmental Science, Vol. 6, Issue 7
  • DOI: 10.1039/c3ee24461j

Variations of ionization potential and electron affinity as a function of surface orientation: The case of orthorhombic SnS
journal, May 2014

  • Stevanović, Vladan; Hartman, Katy; Jaramillo, R.
  • Applied Physics Letters, Vol. 104, Issue 21
  • DOI: 10.1063/1.4879558

“In situ” XPS study of band structures at Cu2O/TiO2 heterojunctions interface
journal, September 2009


Obtaining a higherVoc in HIT cells
journal, January 2005

  • Taguchi, Mikio; Terakawa, Akira; Maruyama, Eiji
  • Progress in Photovoltaics: Research and Applications, Vol. 13, Issue 6
  • DOI: 10.1002/pip.646

Binary copper oxide semiconductors: From materials towards devices
journal, June 2012

  • Meyer, B. K.; Polity, A.; Reppin, D.
  • physica status solidi (b), Vol. 249, Issue 8
  • DOI: 10.1002/pssb.201248128

Valence band offset of Cu 2 O/In 2 O 3 heterojunction determined by X-ray photoelectron spectroscopy
journal, October 2011

  • Dong, C. J.; Yu, W. X.; Xu, M.
  • Journal of Applied Physics, Vol. 110, Issue 7
  • DOI: 10.1063/1.3641637