Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb

Lyo, S. K.; Pan, W.

doi:10.1063/1.4935546

Title: Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb

Authors:

Lyo, S. K. ^[1]; Pan, W. ^[2]

Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Publication Date:: Thu Nov 19 00:00:00 EST 2015

Sponsoring Org.:: USDOE

OSTI Identifier:: 1226510

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 118 Journal Issue: 19; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Lyo, S. K., and Pan, W. Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4935546.

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                    Lyo, S. K., & Pan, W. Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb.  United States.  https://doi.org/10.1063/1.4935546

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                    Lyo, S. K., and Pan, W. Thu .  
"Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb".  United States.  https://doi.org/10.1063/1.4935546.

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@article{osti_1226510,

  title        = {Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb},

  author       = {Lyo, S. K. and Pan, W.},

  abstractNote = {},

  doi          = {10.1063/1.4935546},

  journal      = {Journal of Applied Physics},

  number       = 19,

  volume       = 118,

  place        = {United States},

  year         = {Thu Nov 19 00:00:00 EST 2015},

  month        = {Thu Nov 19 00:00:00 EST 2015}

}

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Works referenced in this record:

Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field
journal, January 2012

Sivalertporn, K.; Mouchliadis, L.; Ivanov, A. L.
Physical Review B, Vol. 85, Issue 4
DOI: 10.1103/PhysRevB.85.045207

Refractive indices of InSb, InAs, GaSb, InAsxSb1−x, and In1−xGaxSb: Effects of free carriers
journal, February 1997

Paskov, P. P.
Journal of Applied Physics, Vol. 81, Issue 4
DOI: 10.1063/1.365360

Far-infrared magneto-optical study of two-dimensional electrons and holes in InAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ Sb quantum wells
journal, January 1997

Kono, J.; McCombe, B. D.; Cheng, J. -P.
Physical Review B, Vol. 55, Issue 3
DOI: 10.1103/PhysRevB.55.1617

Magnetoexcitons in a GaSb-AlSb-InAs quantum-well structure
journal, September 1992

Xia, X.; Chen, X. M.; Quinn, J. J.
Physical Review B, Vol. 46, Issue 11
DOI: 10.1103/PhysRevB.46.7212

Engineering superfluidity in electron-hole double layers
journal, March 1998

Conti, Sergio; Vignale, Giovanni; MacDonald, A. H.
Physical Review B, Vol. 57, Issue 12
DOI: 10.1103/PhysRevB.57.R6846

Possibility of an excitonic ground state in quantum wells
journal, August 1985

Datta, S.; Melloch, M. R.; Gunshor, R. L.
Physical Review B, Vol. 32, Issue 4
DOI: 10.1103/PhysRevB.32.2607

Far-infrared and terahertz lasing based upon resonant and interband tunneling in InAs/GaSb heterostructures
journal, May 2011

Zhang, W. -D.; Woolard, D. L.
Applied Physics Letters, Vol. 98, Issue 20
DOI: 10.1063/1.3590273

Excitonic Instability and Electric-Field-Induced Phase Transition Towards a Two-Dimensional Exciton Condensate
journal, July 1996

Naveh, Y.; Laikhtman, B.
Physical Review Letters, Vol. 77, Issue 5
DOI: 10.1103/PhysRevLett.77.900

Landau-Level Hybridization and the Quantum Hall Effect in $I n A s / (A l S b) / G a S b$ Electron-Hole Systems
journal, July 2004

Suzuki, K.; Takashina, K.; Miyashita, S.
Physical Review Letters, Vol. 93, Issue 1
DOI: 10.1103/PhysRevLett.93.016803

Trapping Excitons in a Two-Dimensional In-Plane Harmonic Potential: Experimental Evidence for Equilibration of Indirect Excitons
journal, July 2006

Vörös, Z.; Snoke, D. W.; Pfeiffer, L.
Physical Review Letters, Vol. 97, Issue 1
DOI: 10.1103/PhysRevLett.97.016803

Energy transfer of excitons between quantum wells separated by a wide barrier
journal, November 2000

Lyo, S. K.
Physical Review B, Vol. 62, Issue 20
DOI: 10.1103/PhysRevB.62.13641

Electric field dependence of optical absorption near the band gap of quantum-well structures
journal, July 1985

Miller, D. A. B.; Chemla, D. S.; Damen, T. C.
Physical Review B, Vol. 32, Issue 2
DOI: 10.1103/PhysRevB.32.1043

Interplay of Exciton Condensation and the Quantum Spin Hall Effect in $InAs / GaSb$ Bilayers
journal, April 2014

Pikulin, D. I.; Hyart, T.
Physical Review Letters, Vol. 112, Issue 17
DOI: 10.1103/PhysRevLett.112.176403

Electronic structure of GaSbAlSb superlattices
journal, January 1985

Voisin, P.; Delalande, C.; Bastard, G.
Superlattices and Microstructures, Vol. 1, Issue 2
DOI: 10.1016/0749-6036(85)90113-2

Subband structures of strained AlSb/InAs/AlSb quantum wells
journal, August 1993

Lin-Chung, P. J.; Yang, M. J.
Physical Review B, Vol. 48, Issue 8
DOI: 10.1103/PhysRevB.48.5338

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
journal, November 2009

Donetsky, Dmitry; Svensson, Stefan P.; Vorobjev, Leonid E.
Applied Physics Letters, Vol. 95, Issue 21
DOI: 10.1063/1.3267103

Excitonic photoluminescence in symmetric coupled double quantum wells subject to an external electric field
journal, September 1999

Soubusta, J.; Grill, R.; Hlídek, P.
Physical Review B, Vol. 60, Issue 11
DOI: 10.1103/PhysRevB.60.7740

The $6.1 A ̊$ family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004

Kroemer, Herbert
Physica E: Low-dimensional Systems and Nanostructures, Vol. 20, Issue 3-4, p. 196-203
DOI: 10.1016/j.physe.2003.08.003

Effect of band nonparabolicity on the magnetoexciton binding energy in semiconductors
journal, November 1995

Lyo, S. K.; Kurtz, S. R.
Physical Review B, Vol. 52, Issue 20
DOI: 10.1103/PhysRevB.52.14582

Band‐structure tailoring by electric field in a weakly coupled electron‐hole system
journal, April 1995

Naveh, Y.; Laikhtman, B.
Applied Physics Letters, Vol. 66, Issue 15
DOI: 10.1063/1.113297

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
DOI: 10.1063/1.1368156

Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors
journal, January 2013

Pan, W.; Klem, J. F.; Kim, J. K.
Applied Physics Letters, Vol. 102, Issue 3
DOI: 10.1063/1.4789555

Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures
journal, July 1990

Colocci, M.; Gurioli, M.; Vinattieri, A.
Europhysics Letters (EPL), Vol. 12, Issue 5
DOI: 10.1209/0295-5075/12/5/007

Evidence for Helical Edge Modes in Inverted $InAs / GaSb$ Quantum Wells
journal, September 2011

Knez, Ivan; Du, Rui-Rui; Sullivan, Gerard
Physical Review Letters, Vol. 107, Issue 13
DOI: 10.1103/PhysRevLett.107.136603

Exciton wave function, binding energy, and lifetime in InAs/GaSb coupled quantum wells
journal, January 2000

de-Leon, S.; Laikhtman, B.
Physical Review B, Vol. 61, Issue 4
DOI: 10.1103/PhysRevB.61.2874

Ground and first excited states of excitons in a magnetic field
journal, July 1972

Cabib, D.; Fabri, E.; Fiorio, G.
Il Nuovo Cimento B, Vol. 10, Issue 1
DOI: 10.1007/BF02911419

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Similar Records

Title: Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb

Citation Formats

Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field journal, January 2012

Refractive indices of InSb, InAs, GaSb, InAsxSb1−x, and In1−xGaxSb: Effects of free carriers journal, February 1997

Far-infrared magneto-optical study of two-dimensional electrons and holes in InAs/ Al x Ga 1 − x Sb quantum wells journal, January 1997

Magnetoexcitons in a GaSb-AlSb-InAs quantum-well structure journal, September 1992

Engineering superfluidity in electron-hole double layers journal, March 1998

Possibility of an excitonic ground state in quantum wells journal, August 1985

Far-infrared and terahertz lasing based upon resonant and interband tunneling in InAs/GaSb heterostructures journal, May 2011

Excitonic Instability and Electric-Field-Induced Phase Transition Towards a Two-Dimensional Exciton Condensate journal, July 1996

Landau-Level Hybridization and the Quantum Hall Effect in I n A s / ( A l S b ) / G a S b Electron-Hole Systems journal, July 2004

Trapping Excitons in a Two-Dimensional In-Plane Harmonic Potential: Experimental Evidence for Equilibration of Indirect Excitons journal, July 2006

Energy transfer of excitons between quantum wells separated by a wide barrier journal, November 2000

Electric field dependence of optical absorption near the band gap of quantum-well structures journal, July 1985

Interplay of Exciton Condensation and the Quantum Spin Hall Effect in InAs / GaSb Bilayers journal, April 2014

Electronic structure of GaSbAlSb superlattices journal, January 1985

Subband structures of strained AlSb/InAs/AlSb quantum wells journal, August 1993

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures journal, November 2009

Excitonic photoluminescence in symmetric coupled double quantum wells subject to an external electric field journal, September 1999

The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review journal, January 2004

Effect of band nonparabolicity on the magnetoexciton binding energy in semiconductors journal, November 1995

Band‐structure tailoring by electric field in a weakly coupled electron‐hole system journal, April 1995

Band parameters for III–V compound semiconductors and their alloys journal, June 2001

Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors journal, January 2013

Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures journal, July 1990

Evidence for Helical Edge Modes in Inverted InAs / GaSb Quantum Wells journal, September 2011

Exciton wave function, binding energy, and lifetime in InAs/GaSb coupled quantum wells journal, January 2000

Ground and first excited states of excitons in a magnetic field journal, July 1972

Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field
journal, January 2012

Refractive indices of InSb, InAs, GaSb, InAsxSb1−x, and In1−xGaxSb: Effects of free carriers
journal, February 1997

Far-infrared magneto-optical study of two-dimensional electrons and holes in InAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ Sb quantum wells
journal, January 1997

Magnetoexcitons in a GaSb-AlSb-InAs quantum-well structure
journal, September 1992

Engineering superfluidity in electron-hole double layers
journal, March 1998

Possibility of an excitonic ground state in quantum wells
journal, August 1985

Far-infrared and terahertz lasing based upon resonant and interband tunneling in InAs/GaSb heterostructures
journal, May 2011

Excitonic Instability and Electric-Field-Induced Phase Transition Towards a Two-Dimensional Exciton Condensate
journal, July 1996

Landau-Level Hybridization and the Quantum Hall Effect in $I n A s / (A l S b) / G a S b$ Electron-Hole Systems
journal, July 2004

Trapping Excitons in a Two-Dimensional In-Plane Harmonic Potential: Experimental Evidence for Equilibration of Indirect Excitons
journal, July 2006

Energy transfer of excitons between quantum wells separated by a wide barrier
journal, November 2000

Electric field dependence of optical absorption near the band gap of quantum-well structures
journal, July 1985

Interplay of Exciton Condensation and the Quantum Spin Hall Effect in $InAs / GaSb$ Bilayers
journal, April 2014

Electronic structure of GaSbAlSb superlattices
journal, January 1985

Subband structures of strained AlSb/InAs/AlSb quantum wells
journal, August 1993

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
journal, November 2009

Excitonic photoluminescence in symmetric coupled double quantum wells subject to an external electric field
journal, September 1999

The $6.1 A ̊$ family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004

Effect of band nonparabolicity on the magnetoexciton binding energy in semiconductors
journal, November 1995

Band‐structure tailoring by electric field in a weakly coupled electron‐hole system
journal, April 1995

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors
journal, January 2013

Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures
journal, July 1990

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journal, September 2011

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journal, January 2000

Ground and first excited states of excitons in a magnetic field
journal, July 1972