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Title: Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb

Authors:
 [1] ;  [2]
  1. Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Publication Date:
Grant/Contract Number:
AC04-94AL85000
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 118 Journal Issue: 19; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1226510

Lyo, S. K., and Pan, W.. Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb. United States: N. p., Web. doi:10.1063/1.4935546.
Lyo, S. K., & Pan, W.. Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb. United States. doi:10.1063/1.4935546.
Lyo, S. K., and Pan, W.. 2015. "Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb". United States. doi:10.1063/1.4935546.
@article{osti_1226510,
title = {Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb},
author = {Lyo, S. K. and Pan, W.},
abstractNote = {},
doi = {10.1063/1.4935546},
journal = {Journal of Applied Physics},
number = 19,
volume = 118,
place = {United States},
year = {2015},
month = {11}
}

Works referenced in this record:

The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004
  • Kroemer, Herbert
  • Physica E: Low-dimensional Systems and Nanostructures, Vol. 20, Issue 3-4, p. 196-203
  • DOI: 10.1016/j.physe.2003.08.003

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001
  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156