Development of an in situ temperature stage for synchrotron X-ray spectromicroscopy
Abstract
In situ characterization of micro- and nanoscale defects in polycrystalline thin-film materials is required to elucidate the physics governing defect formation and evolution during photovoltaic device fabrication and operation. X-ray fluorescence spectromicroscopy is particularly well-suited to study defects in compound semiconductors, as it has a large information depth appropriate to study thick and complex materials, is sensitive to trace amounts of atomic species, and provides quantitative elemental information, non-destructively. Current in situ methods using this technique typically require extensive sample preparation. In this work, we design and build an in situ temperature stage to study defect kinetics in thin-film solar cells under actual processing conditions, requiring minimal sample preparation. Careful selection of construction materials also enables controlled non-oxidizing atmospheres inside the sample chamber such as H2Se and H2S. Temperature ramp rates of up to 300 °C/min are achieved, with a maximum sample temperature of 600 °C. As a case study, we use the stage for synchrotron X-ray fluorescence spectromicroscopy of CuInxGa1–xSe2 (CIGS) thin-films and demonstrate predictable sample thermal drift for temperatures 25–400°C, allowing features on the order of the resolution of the measurement technique (125 nm) to be tracked while heating. As a result, the stage enables previously unattainable inmore »
- Authors:
-
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Arizona State Univ., Tempe, AZ (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- OSTI Identifier:
- 1237842
- Alternate Identifier(s):
- OSTI ID: 1226508
- Grant/Contract Number:
- AC02-06CH11357; EE0005848; 1144616
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Review of Scientific Instruments
- Additional Journal Information:
- Journal Volume: 86; Journal Issue: 11; Journal ID: ISSN 0034-6748
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Chakraborty, R., Serdy, J., West, B., Stuckelberger, M., Lai, B., Maser, J., Bertoni, M. I., Culpepper, M. L., and Buonassisi, T. Development of an in situ temperature stage for synchrotron X-ray spectromicroscopy. United States: N. p., 2015.
Web. doi:10.1063/1.4935807.
Chakraborty, R., Serdy, J., West, B., Stuckelberger, M., Lai, B., Maser, J., Bertoni, M. I., Culpepper, M. L., & Buonassisi, T. Development of an in situ temperature stage for synchrotron X-ray spectromicroscopy. United States. https://doi.org/10.1063/1.4935807
Chakraborty, R., Serdy, J., West, B., Stuckelberger, M., Lai, B., Maser, J., Bertoni, M. I., Culpepper, M. L., and Buonassisi, T. Thu .
"Development of an in situ temperature stage for synchrotron X-ray spectromicroscopy". United States. https://doi.org/10.1063/1.4935807. https://www.osti.gov/servlets/purl/1237842.
@article{osti_1237842,
title = {Development of an in situ temperature stage for synchrotron X-ray spectromicroscopy},
author = {Chakraborty, R. and Serdy, J. and West, B. and Stuckelberger, M. and Lai, B. and Maser, J. and Bertoni, M. I. and Culpepper, M. L. and Buonassisi, T.},
abstractNote = {In situ characterization of micro- and nanoscale defects in polycrystalline thin-film materials is required to elucidate the physics governing defect formation and evolution during photovoltaic device fabrication and operation. X-ray fluorescence spectromicroscopy is particularly well-suited to study defects in compound semiconductors, as it has a large information depth appropriate to study thick and complex materials, is sensitive to trace amounts of atomic species, and provides quantitative elemental information, non-destructively. Current in situ methods using this technique typically require extensive sample preparation. In this work, we design and build an in situ temperature stage to study defect kinetics in thin-film solar cells under actual processing conditions, requiring minimal sample preparation. Careful selection of construction materials also enables controlled non-oxidizing atmospheres inside the sample chamber such as H2Se and H2S. Temperature ramp rates of up to 300 °C/min are achieved, with a maximum sample temperature of 600 °C. As a case study, we use the stage for synchrotron X-ray fluorescence spectromicroscopy of CuInxGa1–xSe2 (CIGS) thin-films and demonstrate predictable sample thermal drift for temperatures 25–400°C, allowing features on the order of the resolution of the measurement technique (125 nm) to be tracked while heating. As a result, the stage enables previously unattainable in situ studies of nanoscale defect kinetics under industrially relevant processing conditions, allowing a deeper understanding of the relationship between material processing parameters, materials properties, and device performance.},
doi = {10.1063/1.4935807},
journal = {Review of Scientific Instruments},
number = 11,
volume = 86,
place = {United States},
year = {Thu Nov 19 00:00:00 EST 2015},
month = {Thu Nov 19 00:00:00 EST 2015}
}
Web of Science
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Works referencing / citing this record:
Defect activation and annihilation in CIGS solar cells: an operando X-ray microscopy study
text, January 2020
- Stuckelberger, Michael E.; Nietzold, Tara; West, Bradley
- Deutsches Elektronen-Synchrotron, DESY, Hamburg
Defect activation and annihilation in CIGS solar cells: an operando x-ray microscopy study
journal, February 2020
- Stuckelberger, Michael E.; Nietzold, Tara; West, Bradley
- Journal of Physics: Energy, Vol. 2, Issue 2