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  • Accepted Manuscript: Epitaxial growth of high quality WO 3 thin films

Title: Epitaxial growth of high quality WO 3 thin films

We have grown epitaxial WO 3 films on various single-crystal substrates using radio-frequency (RF) magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO 4 substrates, films grown on YAlO 3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. Furthermore, the dependence of the growth modes and the surface morphology on the lattice mismatch is discussed.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [3]
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  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Jožef Stefan Institute, Ljubljana (Slovenia)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States)
Publication Date:
Report Number(s):
BNL-108357-2015-JA
Journal ID: ISSN 2166-532X; R&D Project: MA509MACA; KC0203020
Grant/Contract Number:
SC00112704
Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 3; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; epitaxy; surface morphology; thin film growth; X-ray diffraction; crystal structure
OSTI Identifier:
1226040
Citation Formats
Leng, X., Pereiro, J., Strle, J., Bollinger, A. T., and Bozovic, I.. Epitaxial growth of high quality WO3 thin films. United States: N. p., Web. doi:10.1063/1.4930214.
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Leng, X., Pereiro, J., Strle, J., Bollinger, A. T., & Bozovic, I.. Epitaxial growth of high quality WO3 thin films. United States. doi:10.1063/1.4930214.
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Leng, X., Pereiro, J., Strle, J., Bollinger, A. T., and Bozovic, I.. 2015. "Epitaxial growth of high quality WO3 thin films". United States. doi:10.1063/1.4930214. https://www.osti.gov/servlets/purl/1226040.
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@article{osti_1226040,
title = {Epitaxial growth of high quality WO3 thin films},
author = {Leng, X. and Pereiro, J. and Strle, J. and Bollinger, A. T. and Bozovic, I.},
abstractNote = {We have grown epitaxial WO3 films on various single-crystal substrates using radio-frequency (RF) magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on YAlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. Furthermore, the dependence of the growth modes and the surface morphology on the lattice mismatch is discussed.},
doi = {10.1063/1.4930214},
journal = {APL Materials},
number = ,
volume = 3,
place = {United States},
year = {2015},
month = {9}
}
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Works referenced in this record:

Electric-field-induced superconductivity in an insulator
journal, October 2008
  • Ueno, K.; Nakamura, S.; Shimotani, H.
  • Nature Materials, Vol. 7, Issue 11, p. 855-858
  • DOI: 10.1038/nmat2298

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