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  • Accepted Manuscript: Epitaxial growth of high quality WO 3 thin films

Title: Epitaxial growth of high quality WO 3 thin films

We have grown epitaxial WO 3 films on various single-crystal substrates using radio-frequency (RF) magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO 4 substrates, films grown on YAlO 3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. Furthermore, the dependence of the growth modes and the surface morphology on the lattice mismatch is discussed.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [3]
+ Show Author Affiliations
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Jožef Stefan Institute, Ljubljana (Slovenia)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States)
Publication Date:
Report Number(s):
BNL-108357-2015-JA
Journal ID: ISSN 2166-532X; R&D Project: MA509MACA; KC0203020
Grant/Contract Number:
SC00112704
Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 3; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; epitaxy; surface morphology; thin film growth; X-ray diffraction; crystal structure
OSTI Identifier:
1226040
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