Epitaxial growth of high quality WO 3 thin films
We have grown epitaxial WO 3 films on various single-crystal substrates using radio-frequency (RF) magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO 4 substrates, films grown on YAlO 3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. Furthermore, the dependence of the growth modes and the surface morphology on the lattice mismatch is discussed.
- Authors:
-
[1]
; [1]
; [2]
; [1]
; [3]
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Jožef Stefan Institute, Ljubljana (Slovenia)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States)
- Publication Date:
- Report Number(s):
- BNL-108357-2015-JA
Journal ID: ISSN 2166-532X; R&D Project: MA509MACA; KC0203020
- Grant/Contract Number:
- SC00112704
- Type:
- Accepted Manuscript
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 3; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Research Org:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; epitaxy; surface morphology; thin film growth; X-ray diffraction; crystal structure
- OSTI Identifier:
- 1226040
- Free Publicly Accessible Full Text
-
Accepted Manuscript (DOE)
- Publisher's Version of Record
- https://doi.org/10.1063/1.4930214