Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films
Abstract
We report thickness dependent dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films. The Pb(Zr0.2Ti0.8)0.70Ni0.30O3-δ (PZTNi30) thin films for various thicknesses, ranging from 5 nm to 400 nm, were fabricated by pulsed laser deposition technique. Giant dielectric dispersion, low dielectric loss, large dielectric constant ~1000–1500 from 100 Hz to 100 kHz, and diffused dielectric anomaly near 570–630 K were observed in PZTNi30 thin films. These films show well saturated ferroelectric hysteresis, with large remanent polarization. It also illustrated excellent optical transparency which decreased from 82 to 72% with increasing film thickness from 5 nm to 400 nm for the probe wavelengths ranging from 200 to 1100 nm. A decrease in direct bandgap (Eg) values from 4 eV to 3.4 eV and indirect-Eg values from 3.5 eV to 2.9 eV were observed for PZTNi30 thin films with increase in film thickness from 5 nm to 400 nm, respectively. The direct and indirect bandgaps were discussed in context of film thickness and grain size effects. Our investigations on optical properties of PZTNi30 thin films suggest that bandgap can be modified as a function of film thickness which may be useful for readers working to develop novel candidates for ferroelectric photovoltaic.
- Authors:
-
[1];
- Univ. of Puerto Rico, San Juan, PR (United States)
- National Physical Laboratory (CSIR), Delhi, India
- Univ. of St. Andrews, Scotland (United Kingdom)
- Publication Date:
- Research Org.:
- Univ. of Puerto Rico, San Juan, PR (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1469649
- Alternate Identifier(s):
- OSTI ID: 1225989
- Grant/Contract Number:
- FG02-08ER46526
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 118; Journal Issue: 18; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Kumari, Shalini, Ortega, Nora, Pradhan, Dhiren K., Kumar, Ashok, Scott, J. F., and Katiyar, Ram S. Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films. United States: N. p., 2015.
Web. doi:10.1063/1.4935481.
Kumari, Shalini, Ortega, Nora, Pradhan, Dhiren K., Kumar, Ashok, Scott, J. F., & Katiyar, Ram S. Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films. United States. https://doi.org/10.1063/1.4935481
Kumari, Shalini, Ortega, Nora, Pradhan, Dhiren K., Kumar, Ashok, Scott, J. F., and Katiyar, Ram S. Fri .
"Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films". United States. https://doi.org/10.1063/1.4935481. https://www.osti.gov/servlets/purl/1469649.
@article{osti_1469649,
title = {Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films},
author = {Kumari, Shalini and Ortega, Nora and Pradhan, Dhiren K. and Kumar, Ashok and Scott, J. F. and Katiyar, Ram S.},
abstractNote = {We report thickness dependent dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films. The Pb(Zr0.2Ti0.8)0.70Ni0.30O3-δ (PZTNi30) thin films for various thicknesses, ranging from 5 nm to 400 nm, were fabricated by pulsed laser deposition technique. Giant dielectric dispersion, low dielectric loss, large dielectric constant ~1000–1500 from 100 Hz to 100 kHz, and diffused dielectric anomaly near 570–630 K were observed in PZTNi30 thin films. These films show well saturated ferroelectric hysteresis, with large remanent polarization. It also illustrated excellent optical transparency which decreased from 82 to 72% with increasing film thickness from 5 nm to 400 nm for the probe wavelengths ranging from 200 to 1100 nm. A decrease in direct bandgap (Eg) values from 4 eV to 3.4 eV and indirect-Eg values from 3.5 eV to 2.9 eV were observed for PZTNi30 thin films with increase in film thickness from 5 nm to 400 nm, respectively. The direct and indirect bandgaps were discussed in context of film thickness and grain size effects. Our investigations on optical properties of PZTNi30 thin films suggest that bandgap can be modified as a function of film thickness which may be useful for readers working to develop novel candidates for ferroelectric photovoltaic.},
doi = {10.1063/1.4935481},
journal = {Journal of Applied Physics},
number = 18,
volume = 118,
place = {United States},
year = {Fri Nov 13 00:00:00 EST 2015},
month = {Fri Nov 13 00:00:00 EST 2015}
}
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