Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence

Mukherjee, Kunal; Norman, Andrew G.; Akey, Austin J.; Buonassisi, Tonio; Fitzgerald, Eugene A.

doi:10.1063/1.4930990

Title: Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence

Journal Article · 20 September 2015 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.4930990 · OSTI ID:1225962

Mukherjee, Kunal ^[1];

^[2]; Akey, Austin J. ^[1]; Buonassisi, Tonio ^[1]; Fitzgerald, Eugene A. ^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

The occurrence of spontaneous lateral phase separation during thin film growth of Al_xIn_1–xP by metal-organic chemical vapor deposition was investigated using a combination of transmission electron microscopy and atom probe tomography to obtain a quantitative view of this phenomenon. An anisotropic and coherent composition modulation was observed in the nearly lattice-matched films deposited below 750 °C with a quasi-linear amplification with thickness that was inversely proportional to the growth temperature. The periodicity of the modulation increased exponentially with the growth temperature. A comparison of photoluminescence from phase separated and homogenous direct band gap Al_xIn_1–xP deposited on metamorphic InyGa_1–yAs graded buffers showed a lowering of peak-emission energy in accordance with the atom probe compositional characterization without any degradation in luminous intensity. Additionally, indications of carrier trapping in the low band gap regions were observed even at room-temperature. Lastly, while some of these results are in qualitative agreement with theoretical models of kinetic instability in unstrained alloy growth in the literature, significant discrepancies remain.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: National Research Foundation Singapore; National Science Foundation; USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1225962

Report Number(s):: NREL/JA-5K00-65347

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 118; ISSN JAPIAU; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (52)

Immiscibility and spinodal decomposition in III/V alloys Stringfellow, G. B. Journal of Crystal Growth, Vol. 65, Issue 1-3 https://doi.org/10.1016/0022-0248(83)90086-6	journal	December 1983
Spinodal decomposition in InGaAsP epitaxial layers Mahajan, S.; Dutt, B. V.; Temkin, H. Journal of Crystal Growth, Vol. 68, Issue 2 https://doi.org/10.1016/0022-0248(84)90466-4	journal	September 1984
Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phase Suzuki, Tohru; Gomyo, Akiko; Iijima, Sumio Journal of Crystal Growth, Vol. 93, Issue 1-4 https://doi.org/10.1016/0022-0248(88)90559-3	journal	January 1988
Anisotropic surface migration of Ga atoms on GaAs (001) Ohta, Kimihiro; Kojima, Takeshi; Nakagawa, Tadashi Journal of Crystal Growth, Vol. 95, Issue 1-4 https://doi.org/10.1016/0022-0248(89)90354-0	journal	February 1989
Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy LaPierre, R. R.; Okada, T.; Robinson, B. J. Journal of Crystal Growth, Vol. 158, Issue 1-2 https://doi.org/10.1016/0022-0248(95)00364-9	journal	January 1996
Temperature dependence of the energy gap in semiconductors Varshni, Y. P. Physica, Vol. 34, Issue 1 https://doi.org/10.1016/0031-8914(67)90062-6	journal	January 1967
The post-ionization of field evaporated ions: A theoretical explanation of multiple charge states Kingham, David R. Surface Science, Vol. 116, Issue 2 https://doi.org/10.1016/0039-6028(82)90434-4	journal	April 1982
Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates LaPierre, R. R.; Robinson, B. J.; Thompson, D. A. Applied Surface Science, Vol. 90, Issue 4 https://doi.org/10.1016/0169-4332(95)00176-X	journal	December 1995
Simulation of annular dark field stem images using a modified multislice method Kirkland, Earl J.; Loane, Russell F.; Silcox, John Ultramicroscopy, Vol. 23, Issue 1, p. 77-96 https://doi.org/10.1016/0304-3991(87)90229-4	journal	January 1987
Materials-related reliability aspects of III–V optical devices Ueda, O. Materials Science and Engineering: B, Vol. 20, Issue 1-2 https://doi.org/10.1016/0921-5107(93)90387-3	journal	June 1993
Stability of phase-separated microstructure in LPE-grown InGaAs epitaxial layers Lee, K.; Mahajan, S.; Johnson, W. C. Materials Science and Engineering: B, Vol. 28, Issue 1-3 https://doi.org/10.1016/0921-5107(94)90049-3	journal	December 1994
Evolution of surface structure and phase separation in GaInAsSb Wang, C. A.; Calawa, D. R.; Vineis, C. J. Journal of Crystal Growth, Vol. 225, Issue 2-4 https://doi.org/10.1016/S0022-0248(01)00884-3	journal	May 2001
Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth Lee, R. T.; Fetzer, C. M.; Jun, S. W. Journal of Crystal Growth, Vol. 233, Issue 3 https://doi.org/10.1016/S0022-0248(01)01595-0	journal	December 2001
Morphological stability and compositional uniformity of alloy thin films Guyer, J. E.; Voorhees, P. W. Journal of Crystal Growth, Vol. 187, Issue 1 https://doi.org/10.1016/S0022-0248(97)00845-2	journal	April 1998
Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy Grenet, G.; Gendry, M.; Oustric, M. Applied Surface Science, Vol. 123-124 https://doi.org/10.1016/S0169-4332(97)00522-9	journal	January 1998
Phase separation in InAlAs grown by MOVPE with a low growth temperature Kurihara, K.; Takashima, M.; Sakata, K. Journal of Crystal Growth, Vol. 271, Issue 3-4 https://doi.org/10.1016/j.jcrysgro.2004.07.054	journal	November 2004
Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers Mukherjee, K.; Beaton, D. A.; Mascarenhas, A. Journal of Crystal Growth, Vol. 392 https://doi.org/10.1016/j.jcrysgro.2014.01.058	journal	April 2014
Z-contrast Imaging in an Aberration-corrected Scanning Transmission Electron Microscope Pennycook, S. J.; Rafferty, B.; Nellist, P. D. Microscopy and Microanalysis, Vol. 6, Issue 4 https://doi.org/10.1017/S1431927602000594	journal	July 2000
Reflection high‐energy electron diffraction intensity oscillations and anisotropy on vicinal AlAs(001) during molecular‐beam epitaxy Shitara, T.; Neave, J. H.; Joyce, B. A. Applied Physics Letters, Vol. 62, Issue 14 https://doi.org/10.1063/1.108618	journal	April 1993
29.5%‐efficient GaInP/GaAs tandem solar cells Bertness, K. A.; Kurtz, Sarah R.; Friedman, D. J. Applied Physics Letters, Vol. 65, Issue 8 https://doi.org/10.1063/1.112171	journal	August 1994
Naturally formed In _x Al _{1− x} As/In _y Al _{1− y} As vertical superlattices Jun, Sung Won; Seong, Tae‐Yeon; Lee, J. H. Applied Physics Letters, Vol. 68, Issue 24 https://doi.org/10.1063/1.115787	journal	June 1996
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Gainer, G. H.; Fischer, A. J. Applied Physics Letters, Vol. 73, Issue 10 https://doi.org/10.1063/1.122164	journal	September 1998
Effect of surfactant Sb on carrier lifetime in GaInP epilayers Fetzer, C. M.; Lee, R. T.; Stringfellow, G. B. Journal of Applied Physics, Vol. 91, Issue 1 https://doi.org/10.1063/1.1423396	journal	January 2002
Observation of large optical anisotropy and valence band splitting in AlInAs self-assembled lateral quantum wells Francoeur, S.; Hanna, M. C.; Norman, A. G. Applied Physics Letters, Vol. 80, Issue 2 https://doi.org/10.1063/1.1432754	journal	January 2002
Initiation and evolution of phase separation in heteroepitaxial InAlAs films Shin, B.; Lin, A.; Lappo, K. Applied Physics Letters, Vol. 80, Issue 18 https://doi.org/10.1063/1.1476386	journal	May 2002
Conduction Bands in In _{1− x} Al _x P Onton, A.; Chicotka, R. J. Journal of Applied Physics, Vol. 41, Issue 10 https://doi.org/10.1063/1.1658438	journal	September 1970
Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV Dean, P. J.; Kaminsky, G.; Zetterstrom, R. B. Journal of Applied Physics, Vol. 38, Issue 9 https://doi.org/10.1063/1.1710170	journal	August 1967
Observation of vertical honeycomb structure in InAlN∕GaN heterostructures due to lateral phase separation Zhou, Lin; Smith, David J.; McCartney, Martha R. Applied Physics Letters, Vol. 90, Issue 8 https://doi.org/10.1063/1.2696206	journal	February 2007
Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation Quitoriano, Nathaniel J.; Fitzgerald, Eugene A. Journal of Applied Physics, Vol. 102, Issue 3 https://doi.org/10.1063/1.2764204	journal	August 2007
Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy Sahonta, S. -L.; Dimitrakopulos, G. P.; Kehagias, Th. Applied Physics Letters, Vol. 95, Issue 2 https://doi.org/10.1063/1.3184593	journal	July 2009
Influence of clustering on the mobility of III‐V semiconductor alloys Blood, P.; Grassie, A. D. C. Journal of Applied Physics, Vol. 56, Issue 6 https://doi.org/10.1063/1.334200	journal	September 1984
Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid‐phase epitaxial (001) GaInAsP layers Norman, A. G.; Booker, G. R. Journal of Applied Physics, Vol. 57, Issue 10 https://doi.org/10.1063/1.335333	journal	May 1985
Surface layer spinodal decomposition in In _{1− x} Ga _x As _y P _{1− y} and In _{1− x} Ga _x As grown by hydride transport vapor‐phase epitaxy Chu, S. N. G.; Nakahara, S.; Strege, K. E. Journal of Applied Physics, Vol. 57, Issue 10 https://doi.org/10.1063/1.335368	journal	May 1985
Compositional homogeneity of metalorganic chemical vapor deposition grown III‐V compound semiconductor epilayers Mackenzie, R. A. D.; Liddle, J. A.; Grovenor, C. R. M. Journal of Applied Physics, Vol. 69, Issue 1 https://doi.org/10.1063/1.347759	journal	January 1991
Microstructures of (In,Ga)P alloys grown on GaAs by metalorganic vapor‐phase epitaxy Follstaedt, D. M.; Schneider, R. P.; Jones, E. D. Journal of Applied Physics, Vol. 77, Issue 7 https://doi.org/10.1063/1.358659	journal	April 1995
Surface‐diffusion and step‐bunching mechanisms of metalorganic vapor‐phase epitaxy studied by high‐vacuum scanning tunneling microscopy Kasu, Makoto; Kobayashi, Naoki Journal of Applied Physics, Vol. 78, Issue 5 https://doi.org/10.1063/1.360053	journal	September 1995
Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates Mukherjee, K.; Beaton, D. A.; Christian, T. Journal of Applied Physics, Vol. 113, Issue 18 https://doi.org/10.1063/1.4804264	journal	May 2013
Amber-green light-emitting diodes using order-disorder Al _x In ₁₋ _x P heterostructures Christian, Theresa M.; Beaton, Daniel A.; Mukherjee, Kunal Journal of Applied Physics, Vol. 114, Issue 7 https://doi.org/10.1063/1.4818477	journal	August 2013
Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP Haegel, N. M.; Christian, T.; Scandrett, C. Applied Physics Letters, Vol. 105, Issue 20 https://doi.org/10.1063/1.4902316	journal	November 2014
Does In form In-rich clusters in InGaN quantum wells? Humphreys, C. J. Philosophical Magazine, Vol. 87, Issue 13 https://doi.org/10.1080/14786430701342172	journal	May 2007
Two-dimensional phase separation in In 1 − x Ga x As y P 1 − y epitaxial layers McDevitt, T. L.; Mahajan, S.; Laughlin, D. E. Physical Review B, Vol. 45, Issue 12 https://doi.org/10.1103/PhysRevB.45.6614	journal	March 1992
Kinetic instability of semiconductor alloy growth Ipatova, I. P.; Malyshkin, V. G.; Maradudin, A. A. Physical Review B, Vol. 57, Issue 20 https://doi.org/10.1103/PhysRevB.57.12968	journal	May 1998
Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells Leosson, K.; Jensen, J. R.; Langbein, W. Physical Review B, Vol. 61, Issue 15 https://doi.org/10.1103/PhysRevB.61.10322	journal	April 2000
Surface roughness and alloy stability interdependence in lattice-matched and lattice-mismatched heteroepitaxy Priester, Catherine; Grenet, Genevieve Physical Review B, Vol. 61, Issue 23 https://doi.org/10.1103/PhysRevB.61.16029	journal	June 2000
Thermodynamic and kinetic instabilities of lattice-matched alloy layers: Compositional and morphological perturbations Glas, Frank Physical Review B, Vol. 62, Issue 11 https://doi.org/10.1103/PhysRevB.62.7393	journal	September 2000
Morphological instability theory for strained alloy film growth: The effect of compositional stresses and species-dependent surface mobilities on ripple formation during epitaxial film deposition Spencer, B. J.; Voorhees, P. W.; Tersoff, J. Physical Review B, Vol. 64, Issue 23 https://doi.org/10.1103/PhysRevB.64.235318	journal	November 2001
Epitaxial growth in dislocation-free strained alloy films: Morphological and compositional instabilities Huang, Zhi-Feng; Desai, Rashmi C. Physical Review B, Vol. 65, Issue 20 https://doi.org/10.1103/PhysRevB.65.205419	journal	May 2002
Kinetics governing phase separation of nanostructured Sn x Ge 1 − x alloys Ragan, Regina; Guyer, Jonathan E.; Meserole, Erik Physical Review B, Vol. 73, Issue 23 https://doi.org/10.1103/PhysRevB.73.235303	journal	June 2006
Novel Diffusion Mechanism on the GaAs(001) Surface: The Role of Adatom-Dimer Interaction Kley, Alexander; Ruggerone, Paolo; Scheffler, Matthias Physical Review Letters, Vol. 79, Issue 26 https://doi.org/10.1103/PhysRevLett.79.5278	journal	December 1997
Perturbation-Induced Compositional Instability in Epitaxial Binary-Alloy Films Lee, S. R.; Modine, N. A. Physical Review Letters, Vol. 89, Issue 20 https://doi.org/10.1103/PhysRevLett.89.205701	journal	October 2002
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina Journal of Display Technology, Vol. 3, Issue 2, p. 160-175 https://doi.org/10.1109/JDT.2007.895339	journal	June 2007
Surface Roughening of Heteroepitaxial thin Films Gao, Huajian; Nix, William D. Annual Review of Materials Science, Vol. 29, Issue 1 https://doi.org/10.1146/annurev.matsci.29.1.173	journal	August 1999

Similar Records

Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence

Journal Article · 2015 · Journal of Applied Physics · OSTI ID:22489512

Mukherjee, Kunal; Fitzgerald, Eugene A.; Norman, Andrew G.; +2 more

Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

Journal Article · 2019 · ACS Applied Energy Materials · OSTI ID:1580495

Schulte, Kevin L.; Metaferia, Wondwosen; Simon, John D.; +5 more

Electronic and optical properties of laterally composition-modulated Al{sub x}In{sub 1{minus}x}As, Ga{sub x}In{sub 1{minus}x}P, and Ga{sub x}In{sub 1{minus}x}As alloys

Journal Article · 1998 · Physical Review, B: Condensed Matter · OSTI ID:614996

Zhang, Y; Mascarenhas, A

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
III-V semiconductors
aluminium
chemical vapor deposition
emission spectroscopy
optical metrology
phase separation
phase transitions
photoluminescence spectroscopy
quantum wells
semiconductors
thin film growth
tomography
transmission electron microscopy

Title: Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence

Citation Formats

References (52)

Similar Records

Related Subjects