Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface

Inoue, Hisashi; Swartz, Adrian G.; Harmon, Nicholas J.; Tachikawa, Takashi; Hikita, Yasuyuki; Flatté, Michael E.; Hwang, Harold Y.

doi:10.1103/PhysRevX.5.041023

Title: Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface

Abstract

The observed magnetoresistance (MR) in three-terminal (3T) ferromagnet-nonmagnet (FM-NM) tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect) of a spin accumulation, thus offering a powerful approach for characterizing the spin lifetime of candidate materials for spintronics applications. However, due to crucial discrepancies of the extracted spin parameters with known materials properties, this interpretation has come under intense scrutiny. By employing epitaxial artificial dipoles as the tunnel barrier in oxide heterostructures, the band alignments between the FM and NM channels can be controllably engineered, providing an experimental platform for testing the predictions of the various spin accumulation models. Using this approach, we have been able to definitively rule out spin accumulation as the origin of the 3T MR. Instead, we assign the origin of the magnetoresistance to spin-dependent hopping through defect states in the barrier, a fundamental phenomenon seen across diverse systems. In conclusion, a theoretical framework is developed that can account for the signal amplitude, linewidth, and anisotropy.

Authors:: Inoue, Hisashi; Swartz, Adrian G.; Harmon, Nicholas J.; Tachikawa, Takashi; Hikita, Yasuyuki; Flatté, Michael E.; Hwang, Harold Y.

Publication Date:: Wed Nov 11 00:00:00 EST 2015

Research Org.:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1225766

Alternate Identifier(s):: OSTI ID: 1228048

Grant/Contract Number:: AC02-76SF00515

Resource Type:: Published Article

Journal Name:: Physical Review. X

Additional Journal Information:: Journal Name: Physical Review. X Journal Volume: 5 Journal Issue: 4; Journal ID: ISSN 2160-3308

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; materials science; semiconductor physics; spintronics

Citation Formats


                    Inoue, Hisashi, Swartz, Adrian G., Harmon, Nicholas J., Tachikawa, Takashi, Hikita, Yasuyuki, Flatté, Michael E., and Hwang, Harold Y. Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface.  United States: N. p., 2015. 
Web.  doi:10.1103/PhysRevX.5.041023.

Copy to clipboard


                    Inoue, Hisashi, Swartz, Adrian G., Harmon, Nicholas J., Tachikawa, Takashi, Hikita, Yasuyuki, Flatté, Michael E., & Hwang, Harold Y. Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface.  United States.  https://doi.org/10.1103/PhysRevX.5.041023

Copy to clipboard


                    Inoue, Hisashi, Swartz, Adrian G., Harmon, Nicholas J., Tachikawa, Takashi, Hikita, Yasuyuki, Flatté, Michael E., and Hwang, Harold Y. Wed .  
"Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface".  United States.  https://doi.org/10.1103/PhysRevX.5.041023.

Copy to clipboard


                    
@article{osti_1225766,

  title        = {Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface},

  author       = {Inoue, Hisashi and Swartz, Adrian G. and Harmon, Nicholas J. and Tachikawa, Takashi and Hikita, Yasuyuki and Flatté, Michael E. and Hwang, Harold Y.},

  abstractNote = {The observed magnetoresistance (MR) in three-terminal (3T) ferromagnet-nonmagnet (FM-NM) tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect) of a spin accumulation, thus offering a powerful approach for characterizing the spin lifetime of candidate materials for spintronics applications. However, due to crucial discrepancies of the extracted spin parameters with known materials properties, this interpretation has come under intense scrutiny. By employing epitaxial artificial dipoles as the tunnel barrier in oxide heterostructures, the band alignments between the FM and NM channels can be controllably engineered, providing an experimental platform for testing the predictions of the various spin accumulation models. Using this approach, we have been able to definitively rule out spin accumulation as the origin of the 3T MR. Instead, we assign the origin of the magnetoresistance to spin-dependent hopping through defect states in the barrier, a fundamental phenomenon seen across diverse systems. In conclusion, a theoretical framework is developed that can account for the signal amplitude, linewidth, and anisotropy.},

  doi          = {10.1103/PhysRevX.5.041023},

  journal      = {Physical Review. X},

  number       = 4,

  volume       = 5,

  place        = {United States},

  year         = {Wed Nov 11 00:00:00 EST 2015},

  month        = {Wed Nov 11 00:00:00 EST 2015}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Publisher's Version of Record
https://doi.org/10.1103/PhysRevX.5.041023

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 38 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Silicon spintronics with ferromagnetic tunnel devices
journal, July 2012

Jansen, R.; Dash, S. P.; Sharma, S.
Semiconductor Science and Technology, Vol. 27, Issue 8
DOI: 10.1088/0268-1242/27/8/083001

Organic magnetoresistance from deep traps
journal, July 2014

Harmon, N. J.; Flatté, M. E.
Journal of Applied Physics, Vol. 116, Issue 4
DOI: 10.1063/1.4891476

Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
journal, May 2006

Lou, X.; Adelmann, C.; Furis, M.
Physical Review Letters, Vol. 96, Issue 17
DOI: 10.1103/PhysRevLett.96.176603

Spin-dependent transport across Co/LaAlO ₃ /SrTiO ₃ heterojunctions
journal, July 2014

Swartz, Adrian G.; Harashima, Satoshi; Xie, Yanwu
Applied Physics Letters, Vol. 105, Issue 3
DOI: 10.1063/1.4891174

Investigation of the inverted Hanle effect in highly doped Si
journal, August 2012

Aoki, Yasunori; Kameno, Makoto; Ando, Yuichiro
Physical Review B, Vol. 86, Issue 8
DOI: 10.1103/PhysRevB.86.081201

Magnetic-Field-Modulated Resonant Tunneling in Ferromagnetic-Insulator-Nonmagnetic Junctions
journal, July 2014

Song, Yang; Dery, Hanan
Physical Review Letters, Vol. 113, Issue 4
DOI: 10.1103/PhysRevLett.113.047205

Enhanced Electrical Transparency by Ultrathin LaAlO ₃ Insertion at Oxide Metal/Semiconductor Heterointerfaces
journal, February 2015

Yajima, Takeaki; Minohara, Makoto; Bell, Christopher
Nano Letters, Vol. 15, Issue 3
DOI: 10.1021/nl504169m

Bipolaron Mechanism for Organic Magnetoresistance
journal, November 2007

Bobbert, P. A.; Nguyen, T. D.; van Oost, F. W. A.
Physical Review Letters, Vol. 99, Issue 21
DOI: 10.1103/PhysRevLett.99.216801

Current and rate equation for resonant tunneling
journal, February 1993

Davies, John H.; Hershfield, Selman; Hyldgaard, Per
Physical Review B, Vol. 47, Issue 8
DOI: 10.1103/PhysRevB.47.4603

Multiple Magnon Excitation in NiO by Electron Tunneling
journal, December 1971

Tsui, D. C.; Dietz, R. E.; Walker, L. R.
Physical Review Letters, Vol. 27, Issue 25
DOI: 10.1103/PhysRevLett.27.1729

Inelastic electron tunneling spectroscopy of local “spin accumulation” devices
journal, June 2014

Tinkey, Holly N.; Li, Pengke; Appelbaum, Ian
Applied Physics Letters, Vol. 104, Issue 23
DOI: 10.1063/1.4883638

Current Rectification by Pauli Exclusion in a Weakly Coupled Double Quantum Dot System
journal, July 2002

Ono, K.
Science, Vol. 297, Issue 5585
DOI: 10.1126/science.1070958

Electron Mobility in Semiconducting Strontium Titanate
journal, March 1967

Tufte, O. N.; Chapman, P. W.
Physical Review, Vol. 155, Issue 3
DOI: 10.1103/PhysRev.155.796

Electric Field Control of Spin Lifetimes in $Nb − {SrTiO}_{3}$ by Spin-Orbit Fields
journal, September 2015

Kamerbeek, A. M.; Högl, P.; Fabian, J.
Physical Review Letters, Vol. 115, Issue 13
DOI: 10.1103/PhysRevLett.115.136601

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
journal, August 2011

Dash, S. P.; Sharma, S.; Le Breton, J. C.
Physical Review B, Vol. 84, Issue 5
DOI: 10.1103/PhysRevB.84.054410

How reliable are Hanle measurements in metals in a three-terminal geometry?
journal, May 2013

Txoperena, Oihana; Gobbi, Marco; Bedoya-Pinto, Amilcar
Applied Physics Letters, Vol. 102, Issue 19
DOI: 10.1063/1.4806987

Gate-Controlled Spin Injection at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces
journal, April 2012

Reyren, N.; Bibes, M.; Lesne, E.
Physical Review Letters, Vol. 108, Issue 18
DOI: 10.1103/PhysRevLett.108.186802

Resonant Spin Amplification in $n$ -Type GaAs
journal, May 1998

Kikkawa, J. M.; Awschalom, D. D.
Physical Review Letters, Vol. 80, Issue 19
DOI: 10.1103/PhysRevLett.80.4313

Observation of Coulomb correlations of resonant tunneling and inelastic hopping
journal, November 1992

Ephron, D.; Xu, Y.; Beasley, M. R.
Physical Review Letters, Vol. 69, Issue 21
DOI: 10.1103/PhysRevLett.69.3112

Spin-Flip Induced Magnetoresistance in Positionally Disordered Organic Solids
journal, May 2012

Harmon, N. J.; Flatté, M. E.
Physical Review Letters, Vol. 108, Issue 18
DOI: 10.1103/PhysRevLett.108.186602

Electric field effects on spin accumulation in Nb-doped SrTiO ₃ using tunable spin injection contacts at room temperature
journal, May 2014

Kamerbeek, A. M.; de Vries, E. K.; Dankert, A.
Applied Physics Letters, Vol. 104, Issue 21
DOI: 10.1063/1.4880895

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
journal, July 2013

Han, Wei; Jiang, Xin; Kajdos, Adam
Nature Communications, Vol. 4, Issue 1
DOI: 10.1038/ncomms3134

Resonant magnetotunneling between normal and ferromagnetic electrodes in relation to the three-terminal spin transport
journal, May 2015

Yue, Z.; Prestgard, M. C.; Tiwari, A.
Physical Review B, Vol. 91, Issue 19
DOI: 10.1103/PhysRevB.91.195316

Dramatic mobility enhancements in doped SrTiO3 thin films by defect management
journal, July 2010

Kozuka, Y.; Hikita, Y.; Bell, C.
Applied Physics Letters, Vol. 97, Issue 1
DOI: 10.1063/1.3457994

Anisotropy-Driven Spin Relaxation in Germanium
journal, December 2013

Li, Pengke; Li, Jing; Qing, Lan
Physical Review Letters, Vol. 111, Issue 25
DOI: 10.1103/PhysRevLett.111.257204

Impurity-Assisted Tunneling Magnetoresistance under a Weak Magnetic Field
journal, October 2014

Txoperena, Oihana; Song, Yang; Qing, Lan
Physical Review Letters, Vol. 113, Issue 14
DOI: 10.1103/PhysRevLett.113.146601

Emergent phenomena at oxide interfaces
journal, January 2012

Hwang, H. Y.; Iwasa, Y.; Kawasaki, M.
Nature Materials, Vol. 11, Issue 2
DOI: 10.1038/nmat3223

Self-consistent model of spin accumulation magnetoresistance in ferromagnet/insulator/semiconductor tunnel junctions
journal, December 2014

Appelbaum, Ian; Tinkey, Holly N.; Li, Pengke
Physical Review B, Vol. 90, Issue 22
DOI: 10.1103/PhysRevB.90.220402

Low-temperature spin relaxation in n -type GaAs
journal, December 2002

Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.
Physical Review B, Vol. 66, Issue 24
DOI: 10.1103/PhysRevB.66.245204

Derivation of effective spin-orbit Hamiltonians and spin lifetimes with application to ${SrTiO}_{3}$ heterostructures
journal, April 2014

Şahin, Cüneyt; Vignale, Giovanni; Flatté, Michael E.
Physical Review B, Vol. 89, Issue 15
DOI: 10.1103/PhysRevB.89.155402

Electrical creation of spin polarization in silicon at room temperature
journal, November 2009

Dash, Saroj P.; Sharma, Sandeep; Patel, Ram S.
Nature, Vol. 462, Issue 7272
DOI: 10.1038/nature08570

Room temperature electrical spin injection into GaAs by an oxide spin injector
journal, July 2014

Bhat, Shwetha G.; Kumar, P. S. Anil
Scientific Reports, Vol. 4, Issue 1
DOI: 10.1038/srep05588

Inelastic electron tunnelling spectroscopy
journal, March 1985

Adkins, C. J.; Phillips, W. A.
Journal of Physics C: Solid State Physics, Vol. 18, Issue 7
DOI: 10.1088/0022-3719/18/7/003

Large magnetoresistance in nonmagnetic $π$ -conjugated semiconductor thin film devices
journal, November 2005

Mermer, Ö.; Veeraraghavan, G.; Francis, T. L.
Physical Review B, Vol. 72, Issue 20
DOI: 10.1103/PhysRevB.72.205202

Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor
journal, January 2009

Tran, M.; Jaffrès, H.; Deranlot, C.
Physical Review Letters, Vol. 102, Issue 3
DOI: 10.1103/PhysRevLett.102.036601

Injection and detection of spin in a semiconductor by tunneling via interface states
journal, April 2012

Jansen, R.; Deac, A. M.; Saito, H.
Physical Review B, Vol. 85, Issue 13
DOI: 10.1103/PhysRevB.85.134420

Effect of spin-orbit coupling on magnetoresistance in organic semiconductors
journal, January 2007

Sheng, Y.; Nguyen, T. D.; Veeraraghavan, G.
Physical Review B, Vol. 75, Issue 3
DOI: 10.1103/PhysRevB.75.035202

Similar Records in DOE PAGES and OSTI.GOV collections:

Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts

Journal Article Park, June-Young ; Park, Byong-Guk ; Baek, Seung-heon Chris ; ... - Applied Physics Letters

We report a strong bias voltage dependence of magnetoresistance (MR) in CoFeB/MgO/Si spin-injection tunnel contacts using the three-terminal Hanle geometry. When a bias voltage is relatively large, the MR is composed of two characteristic signals: a conventional Hanle signal observed at a low magnetic field, which is due to the precession of injected spins, and another signal originating from the rotation of the magnetization at a larger magnetic field. In contrast, for a small bias voltage, additional signals appear at a wide range of magnetic fields, which occasionally overwhelms the conventional Hanle signals. Because the additional signals are pronounced atmore »« less
https://doi.org/10.1063/1.4935090
Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n{sup +}-Si junctions

Journal Article Saito, Y., E-mail: yoshiaki.saito@toshiba.co.jp ; Ishikawa, M. ; Sugiyama, H. ; ... - Journal of Applied Physics

Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - t{sub MgO} plot (RA: resistance area product, t{sub MgO}: thickness of MgO tunnel barrier) in CoFe/MgO/n{sup +}-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (P{sub Si}) in Si. The estimated absolute values of P{sub Si} using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. Tomore »« less
https://doi.org/10.1063/1.4907242
A comparative study of three-terminal Hanle signals in CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si tunnel junctions

Journal Article Lee, Jeong-Hyeon ; Cho, B. K., E-mail: chobk@gist.ac.kr ; Grünberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology ; ... - Applied Physics Letters

We performed three-terminal (3T) Hanle measurement for two types of sample series, CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si, with various tunnel resistances. Clear Hanle signal and anomalous scaling between spin resistance-area product and tunnel resistance-area product were observed in CoFe/SiO{sub 2}/n{sup +}-Si devices. In order to explore the origin of the Hanle signal and the impurity-assisted tunneling effect on the Hanle signal in our devices, Hanle measurement in Cu/SiO{sub 2}/n{sup +}-Si devices was performed as well. However, no detectable Hanle signal was observed in Cu/SiO{sub 2}/n{sup +}-Si, even though a lot of samples with various tunnel resistances were studiedmore »« less
https://doi.org/10.1063/1.4940120
Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

Journal Article Wang, Shouguo ; Ward, R. C. C. ; Zhang, Xiaoguang ; ... - Journal of Nanoscience and Nanotechnology

Following predictions by first-principles theory of huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratio about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, MR ratio of about 600% has been reported at RT in MgO-based amorphous MTJs with core structure of CoFeB/MgO/CoFeB grown by magnetron sputtering with amorphous CoFeB layers. The sputtered CoFeB/MgO/CoFeB MTJs shows a great potential application in spintronic devices. Although epitaxial structure will probably not be used in devices, it remains an excellent model system to compare theoretical calculations with experimental results and tomore »« less
https://doi.org/10.1166/jnn.2012.4257
Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

Journal Article Galbiati, Marta ; Tatay, Sergio ; Delprat, Sophie ; ... - Applied Physics Letters

Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al{sub 2}O{sub 3} or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffusemore »« less
https://doi.org/10.1063/1.4913908

Similar Records

Title: Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface

Abstract

Citation Formats

Silicon spintronics with ferromagnetic tunnel devices journal, July 2012

Organic magnetoresistance from deep traps journal, July 2014

Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface journal, May 2006

Spin-dependent transport across Co/LaAlO 3 /SrTiO 3 heterojunctions journal, July 2014

Investigation of the inverted Hanle effect in highly doped Si journal, August 2012

Magnetic-Field-Modulated Resonant Tunneling in Ferromagnetic-Insulator-Nonmagnetic Junctions journal, July 2014

Enhanced Electrical Transparency by Ultrathin LaAlO 3 Insertion at Oxide Metal/Semiconductor Heterointerfaces journal, February 2015

Bipolaron Mechanism for Organic Magnetoresistance journal, November 2007

Current and rate equation for resonant tunneling journal, February 1993

Multiple Magnon Excitation in NiO by Electron Tunneling journal, December 1971

Inelastic electron tunneling spectroscopy of local “spin accumulation” devices journal, June 2014

Current Rectification by Pauli Exclusion in a Weakly Coupled Double Quantum Dot System journal, July 2002

Electron Mobility in Semiconducting Strontium Titanate journal, March 1967

Electric Field Control of Spin Lifetimes in Nb − SrTiO 3 by Spin-Orbit Fields journal, September 2015

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface journal, August 2011

How reliable are Hanle measurements in metals in a three-terminal geometry? journal, May 2013

Gate-Controlled Spin Injection at LaAlO 3 / SrTiO 3 Interfaces journal, April 2012

Resonant Spin Amplification in n -Type GaAs journal, May 1998

Observation of Coulomb correlations of resonant tunneling and inelastic hopping journal, November 1992

Spin-Flip Induced Magnetoresistance in Positionally Disordered Organic Solids journal, May 2012

Electric field effects on spin accumulation in Nb-doped SrTiO 3 using tunable spin injection contacts at room temperature journal, May 2014

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique journal, July 2013

Resonant magnetotunneling between normal and ferromagnetic electrodes in relation to the three-terminal spin transport journal, May 2015

Dramatic mobility enhancements in doped SrTiO3 thin films by defect management journal, July 2010

Anisotropy-Driven Spin Relaxation in Germanium journal, December 2013

Impurity-Assisted Tunneling Magnetoresistance under a Weak Magnetic Field journal, October 2014

Emergent phenomena at oxide interfaces journal, January 2012

Self-consistent model of spin accumulation magnetoresistance in ferromagnet/insulator/semiconductor tunnel junctions journal, December 2014

Low-temperature spin relaxation in n -type GaAs journal, December 2002

Derivation of effective spin-orbit Hamiltonians and spin lifetimes with application to SrTiO 3 heterostructures journal, April 2014

Electrical creation of spin polarization in silicon at room temperature journal, November 2009

Room temperature electrical spin injection into GaAs by an oxide spin injector journal, July 2014

Inelastic electron tunnelling spectroscopy journal, March 1985

Large magnetoresistance in nonmagnetic π -conjugated semiconductor thin film devices journal, November 2005

Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor journal, January 2009

Injection and detection of spin in a semiconductor by tunneling via interface states journal, April 2012

Effect of spin-orbit coupling on magnetoresistance in organic semiconductors journal, January 2007

Silicon spintronics with ferromagnetic tunnel devices
journal, July 2012

Organic magnetoresistance from deep traps
journal, July 2014

Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
journal, May 2006

Spin-dependent transport across Co/LaAlO ₃ /SrTiO ₃ heterojunctions
journal, July 2014

Investigation of the inverted Hanle effect in highly doped Si
journal, August 2012

Magnetic-Field-Modulated Resonant Tunneling in Ferromagnetic-Insulator-Nonmagnetic Junctions
journal, July 2014

Enhanced Electrical Transparency by Ultrathin LaAlO ₃ Insertion at Oxide Metal/Semiconductor Heterointerfaces
journal, February 2015

Bipolaron Mechanism for Organic Magnetoresistance
journal, November 2007

Current and rate equation for resonant tunneling
journal, February 1993

Multiple Magnon Excitation in NiO by Electron Tunneling
journal, December 1971

Inelastic electron tunneling spectroscopy of local “spin accumulation” devices
journal, June 2014

Current Rectification by Pauli Exclusion in a Weakly Coupled Double Quantum Dot System
journal, July 2002

Electron Mobility in Semiconducting Strontium Titanate
journal, March 1967

Electric Field Control of Spin Lifetimes in $Nb − {SrTiO}_{3}$ by Spin-Orbit Fields
journal, September 2015

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
journal, August 2011

How reliable are Hanle measurements in metals in a three-terminal geometry?
journal, May 2013

Gate-Controlled Spin Injection at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces
journal, April 2012

Resonant Spin Amplification in $n$ -Type GaAs
journal, May 1998

Observation of Coulomb correlations of resonant tunneling and inelastic hopping
journal, November 1992

Spin-Flip Induced Magnetoresistance in Positionally Disordered Organic Solids
journal, May 2012

Electric field effects on spin accumulation in Nb-doped SrTiO ₃ using tunable spin injection contacts at room temperature
journal, May 2014

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
journal, July 2013

Resonant magnetotunneling between normal and ferromagnetic electrodes in relation to the three-terminal spin transport
journal, May 2015

Dramatic mobility enhancements in doped SrTiO3 thin films by defect management
journal, July 2010

Anisotropy-Driven Spin Relaxation in Germanium
journal, December 2013

Impurity-Assisted Tunneling Magnetoresistance under a Weak Magnetic Field
journal, October 2014

Emergent phenomena at oxide interfaces
journal, January 2012

Self-consistent model of spin accumulation magnetoresistance in ferromagnet/insulator/semiconductor tunnel junctions
journal, December 2014

Low-temperature spin relaxation in n -type GaAs
journal, December 2002

Derivation of effective spin-orbit Hamiltonians and spin lifetimes with application to ${SrTiO}_{3}$ heterostructures
journal, April 2014

Electrical creation of spin polarization in silicon at room temperature
journal, November 2009

Room temperature electrical spin injection into GaAs by an oxide spin injector
journal, July 2014

Inelastic electron tunnelling spectroscopy
journal, March 1985

Large magnetoresistance in nonmagnetic $π$ -conjugated semiconductor thin film devices
journal, November 2005

Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor
journal, January 2009

Injection and detection of spin in a semiconductor by tunneling via interface states
journal, April 2012

Effect of spin-orbit coupling on magnetoresistance in organic semiconductors
journal, January 2007