Molecular Self-Assembly in a Poorly Screened Environment: F 4 TCNQ on Graphene/BN
- Department of Physics, University of California, Berkeley, California 94720, United States
- Department of Physics, University of California, Berkeley, California 94720, United States, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Physics, University of California, Berkeley, California 94720, United States, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States, Korea Institute for Advanced Study, Seoul 130-722, Korea
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
- Department of Physics, University of California, Berkeley, California 94720, United States, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States, Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Physics, University of California, Berkeley, California 94720, United States, Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore, Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
Not Available
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1224916
- Journal Information:
- ACS Nano, Journal Name: ACS Nano Journal Issue: 12 Vol. 9; ISSN 1936-0851
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Molecular Interactions and Ordering in Electrically Doped Polymers: Blends of PBTTT and F
4
TCNQ
Thermoelectric Properties of Poly(3-hexylthiophene) (P3HT) Doped with 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4 TCNQ) by Vapor-Phase Infiltration
Nonlinear bandgap opening behavior of BN co-doped graphene
Journal Article
·
2014
· Macromolecules
·
OSTI ID:1415263
+6 more
Thermoelectric Properties of Poly(3-hexylthiophene) (P3HT) Doped with 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4 TCNQ) by Vapor-Phase Infiltration
Journal Article
·
2018
· Chemistry of Materials
·
OSTI ID:1418399
+1 more
Nonlinear bandgap opening behavior of BN co-doped graphene
Journal Article
·
2016
· Carbon
·
OSTI ID:1358881
+13 more