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Title: THz generation mechanisms in the semiconductor alloy, GaAs1−xBix

Authors:
 [1] ;  [2] ; ORCiD logo [1]
  1. Indian Institute of Science Education and Research Thiruvananthapuram (IISER-TVM), CET Campus, Engineering College PO, Thiruvananthapuram, Kerala, India
  2. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401, USA
Publication Date:
Grant/Contract Number:
AC36-08GO28308
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 118 Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1224876

Vaisakh, C. P., Mascarenhas, A., and Kini, R. N.. THz generation mechanisms in the semiconductor alloy, GaAs1−xBix. United States: N. p., Web. doi:10.1063/1.4933290.
Vaisakh, C. P., Mascarenhas, A., & Kini, R. N.. THz generation mechanisms in the semiconductor alloy, GaAs1−xBix. United States. doi:10.1063/1.4933290.
Vaisakh, C. P., Mascarenhas, A., and Kini, R. N.. 2015. "THz generation mechanisms in the semiconductor alloy, GaAs1−xBix". United States. doi:10.1063/1.4933290.
@article{osti_1224876,
title = {THz generation mechanisms in the semiconductor alloy, GaAs1−xBix},
author = {Vaisakh, C. P. and Mascarenhas, A. and Kini, R. N.},
abstractNote = {},
doi = {10.1063/1.4933290},
journal = {Journal of Applied Physics},
number = 16,
volume = 118,
place = {United States},
year = {2015},
month = {10}
}

Works referenced in this record:

Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs 1 x Bi x
journal, February 2011