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Title: Interfacial dislocations in (111) oriented (Ba 0.7Sr 0.3)TiO 3 films on SrTiO 3 single crystal

In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO 3 films grown on (111)-oriented SrTiO 3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba 0.7Sr 0.3)TiO 3 films.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [4] ; ORCiD logo [5] ;  [3] ; ORCiD logo [3]
  1. Nanjing Univ., Nanjing (China); Brookhaven National Lab., Upton, NY (United States)
  2. Nagoya Univ., Nagoya (Japan); Japan Science and Technology Agency, Saitama (Japan); Tokyo Institute of Technology, Yokohama (Japan)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Tokyo Institute of Technology, Yokohama (Japan)
  5. Nanjing Univ., Nanjing (China)
Publication Date:
Report Number(s):
BNL-108487-2015-JA
Journal ID: ISSN 0003-6951; APPLAB; KC0403020
Grant/Contract Number:
SC00112704
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
29 ENERGY PLANNING, POLICY, AND ECONOMY; (Ba0.7Sr0.3)TiO3; interfacial dislocations; STEM; Center for Functional Nanomaterials; dislocations; epitaxy; thin film structure; dielectric thin films; stacking faults
OSTI Identifier:
1224766

Shen, Xuan, Yamada, Tomoaki, Lin, Ruoqian, Kamo, Takafumi, Funakubo, Hiroshi, Wu, Di, Xin, Huolin L., and Su, Dong. Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal. United States: N. p., Web. doi:10.1063/1.4932953.
Shen, Xuan, Yamada, Tomoaki, Lin, Ruoqian, Kamo, Takafumi, Funakubo, Hiroshi, Wu, Di, Xin, Huolin L., & Su, Dong. Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal. United States. doi:10.1063/1.4932953.
Shen, Xuan, Yamada, Tomoaki, Lin, Ruoqian, Kamo, Takafumi, Funakubo, Hiroshi, Wu, Di, Xin, Huolin L., and Su, Dong. 2015. "Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal". United States. doi:10.1063/1.4932953. https://www.osti.gov/servlets/purl/1224766.
@article{osti_1224766,
title = {Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal},
author = {Shen, Xuan and Yamada, Tomoaki and Lin, Ruoqian and Kamo, Takafumi and Funakubo, Hiroshi and Wu, Di and Xin, Huolin L. and Su, Dong},
abstractNote = {In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO3 films grown on (111)-oriented SrTiO3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba0.7Sr0.3)TiO3 films.},
doi = {10.1063/1.4932953},
journal = {Applied Physics Letters},
number = 14,
volume = 107,
place = {United States},
year = {2015},
month = {10}
}