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Title: Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal

Abstract

In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO3 films grown on (111)-oriented SrTiO3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba0.7Sr0.3)TiO3 films.

Authors:
 [1];  [2];  [3];  [4];  [4]; ORCiD logo [5];  [3]; ORCiD logo [3]
  1. Nanjing Univ., Nanjing (China); Brookhaven National Lab., Upton, NY (United States)
  2. Nagoya Univ., Nagoya (Japan); Japan Science and Technology Agency, Saitama (Japan); Tokyo Institute of Technology, Yokohama (Japan)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Tokyo Institute of Technology, Yokohama (Japan)
  5. Nanjing Univ., Nanjing (China)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1224766
Report Number(s):
BNL-108487-2015-JA
Journal ID: ISSN 0003-6951; APPLAB; KC0403020
Grant/Contract Number:  
SC00112704
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
29 ENERGY PLANNING, POLICY, AND ECONOMY; (Ba0.7Sr0.3)TiO3; interfacial dislocations; STEM; Center for Functional Nanomaterials; dislocations; epitaxy; thin film structure; dielectric thin films; stacking faults

Citation Formats

Shen, Xuan, Yamada, Tomoaki, Lin, Ruoqian, Kamo, Takafumi, Funakubo, Hiroshi, Wu, Di, Xin, Huolin L., and Su, Dong. Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal. United States: N. p., 2015. Web. doi:10.1063/1.4932953.
Shen, Xuan, Yamada, Tomoaki, Lin, Ruoqian, Kamo, Takafumi, Funakubo, Hiroshi, Wu, Di, Xin, Huolin L., & Su, Dong. Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal. United States. https://doi.org/10.1063/1.4932953
Shen, Xuan, Yamada, Tomoaki, Lin, Ruoqian, Kamo, Takafumi, Funakubo, Hiroshi, Wu, Di, Xin, Huolin L., and Su, Dong. Thu . "Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal". United States. https://doi.org/10.1063/1.4932953. https://www.osti.gov/servlets/purl/1224766.
@article{osti_1224766,
title = {Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal},
author = {Shen, Xuan and Yamada, Tomoaki and Lin, Ruoqian and Kamo, Takafumi and Funakubo, Hiroshi and Wu, Di and Xin, Huolin L. and Su, Dong},
abstractNote = {In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO3 films grown on (111)-oriented SrTiO3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba0.7Sr0.3)TiO3 films.},
doi = {10.1063/1.4932953},
journal = {Applied Physics Letters},
number = 14,
volume = 107,
place = {United States},
year = {Thu Oct 08 00:00:00 EDT 2015},
month = {Thu Oct 08 00:00:00 EDT 2015}
}

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Works referenced in this record:

Origin of the dielectric dead layer in nanoscale capacitors
journal, October 2006

  • Stengel, Massimiliano; Spaldin, Nicola A.
  • Nature, Vol. 443, Issue 7112
  • DOI: 10.1038/nature05148

Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites
journal, January 2004

  • Chu, Ming-Wen; Szafraniak, Izabela; Scholz, Roland
  • Nature Materials, Vol. 3, Issue 2
  • DOI: 10.1038/nmat1057

Soft mode behavior in SrTiO3/DyScO3 thin films: Evidence of ferroelectric and antiferrodistortive phase transitions
journal, December 2009

  • Nuzhnyy, D.; Petzelt, J.; Kamba, S.
  • Applied Physics Letters, Vol. 95, Issue 23
  • DOI: 10.1063/1.3271179

Annealing effect on dislocations in SrTiO3∕LaAlO3 heterostructures
journal, March 2007

  • Su, Dong; Yamada, Tomoaki; Sherman, Vladimir O.
  • Journal of Applied Physics, Vol. 101, Issue 6
  • DOI: 10.1063/1.2710281

Atomic structure of Ba0.5Sr0.5TiO3 thin films on LaAlO3
journal, October 1999

  • Gao, H. -J.; Chen, C. L.; Rafferty, B.
  • Applied Physics Letters, Vol. 75, Issue 17
  • DOI: 10.1063/1.125071

Misfit dislocation walls in solid films
journal, August 1999


Structural evolution of dislocation half-loops in epitaxial BaTiO3 thin films during high-temperature annealing
journal, September 2004

  • Sun, H. P.; Pan, X. Q.; Haeni, J. H.
  • Applied Physics Letters, Vol. 85, Issue 11
  • DOI: 10.1063/1.1789233

Structural and dielectric properties of strain-controlled epitaxial SrTiO3 thin films by two-step growth technique
journal, September 2005

  • Yamada, Tomoaki; Astafiev, Konstantin F.; Sherman, Vladimir O.
  • Journal of Applied Physics, Vol. 98, Issue 5
  • DOI: 10.1063/1.2037211

Analysis of misfit relaxation in heteroepitaxial BaTiO 3 thin films
journal, October 1999

  • Suzuki, Toshimasa; Nishi, Yuji; Fujimoto, Masayuki
  • Philosophical Magazine A, Vol. 79, Issue 10
  • DOI: 10.1080/01418619908214294

Ferroelectric and antiferroelectric coupling in superlattices of paraelectric perovskites at room temperature
journal, July 2003


Epitaxial growth and dielectric properties of (111) oriented BaTiO3/SrTiO3 superlattices by pulsed-laser deposition
journal, November 2000

  • Nakagawara, Osamu; Shimuta, Toru; Makino, Takahiro
  • Applied Physics Letters, Vol. 77, Issue 20
  • DOI: 10.1063/1.1324985

Pressure-induced crossover from long-to-short-range order in [Pb(Zn1/3Nb2/3)O3]0.905(PbTiO3)0.095 single crystal
journal, March 2000

  • Samara, G. A.; Venturini, E. L.; Schmidt, V. Hugo
  • Applied Physics Letters, Vol. 76, Issue 10
  • DOI: 10.1063/1.126024

Dissociation and evolution of threading dislocations in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3
journal, January 2003

  • Lu, C. J.; Bendersky, L. A.; Chang, K.
  • Journal of Applied Physics, Vol. 93, Issue 1
  • DOI: 10.1063/1.1524315

Tuning of direct current bias-induced resonances in micromachined Ba0.3Sr0.7TiO3 thin-film capacitors
journal, December 2007

  • Noeth, Andreas; Yamada, Tomoaki; Sherman, Vladimir O.
  • Journal of Applied Physics, Vol. 102, Issue 11
  • DOI: 10.1063/1.2822203

High-resolution identification of ½⟨110⟩ stacking faults in epitaxial Ba 0.3 Sr 0.7 TiO 3 thin films
journal, January 2003


Ferroelectric thin films: Review of materials, properties, and applications
journal, September 2006

  • Setter, N.; Damjanovic, D.; Eng, L.
  • Journal of Applied Physics, Vol. 100, Issue 5
  • DOI: 10.1063/1.2336999

Effective elastic properties for unpoled barium titanate
journal, January 2007


Movement of Dislocations
book, February 2011


Dependence of dielectric properties on internal stresses in epitaxial barium strontium titanate thin films
journal, April 2001

  • Li, Hao; Roytburd, A. L.; Alpay, S. P.
  • Applied Physics Letters, Vol. 78, Issue 16
  • DOI: 10.1063/1.1359141

Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films
journal, January 2001

  • Park, B. H.; Peterson, E. J.; Jia, Q. X.
  • Applied Physics Letters, Vol. 78, Issue 4
  • DOI: 10.1063/1.1340863

Optimization of the tunability of barium strontium titanate films via epitaxial stresses
journal, January 2003

  • Ban, Z. -G.; Alpay, S. P.
  • Journal of Applied Physics, Vol. 93, Issue 1
  • DOI: 10.1063/1.1524310

Calculation of critical layer thickness versus lattice mismatch for Ge x Si 1− x /Si strained‐layer heterostructures
journal, August 1985

  • People, R.; Bean, J. C.
  • Applied Physics Letters, Vol. 47, Issue 3
  • DOI: 10.1063/1.96206

Phase diagrams and dielectric response of epitaxial barium strontium titanate films: A theoretical analysis
journal, June 2002

  • Ban, Z. -G.; Alpay, S. P.
  • Journal of Applied Physics, Vol. 91, Issue 11
  • DOI: 10.1063/1.1473675

Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects
journal, September 2000

  • Canedy, C. L.; Li, Hao; Alpay, S. P.
  • Applied Physics Letters, Vol. 77, Issue 11
  • DOI: 10.1063/1.1308531

Misfit dislocations in nanoscale ferroelectric heterostructures
journal, May 2005

  • Nagarajan, V.; Jia, C. L.; Kohlstedt, H.
  • Applied Physics Letters, Vol. 86, Issue 19
  • DOI: 10.1063/1.1922579

Origin of 90° domain wall pinning in Pb(Zr 0.2 Ti 0.8 )O 3 heteroepitaxial thin films
journal, September 2011

  • Su, Dong; Meng, Qingping; Vaz, C. A. F.
  • Applied Physics Letters, Vol. 99, Issue 10
  • DOI: 10.1063/1.3634028

Study of Microstructure in SrTiO 3 /Si by High-resolution Transmission Electron Microscopy
journal, January 2002

  • Yang, G. Y.; Finder, J. M.; Wang, J.
  • Journal of Materials Research, Vol. 17, Issue 1
  • DOI: 10.1557/JMR.2002.0030

Growth-mode induced defects in epitaxial SrTiO 3 thin films grown on single crystal LaAlO 3 by a two-step PLD process
journal, March 2011

  • Su, Dong; Yamada, Tomoaki; Gysel, Roman
  • Journal of Materials Research, Vol. 26, Issue 6
  • DOI: 10.1557/jmr.2010.82

Transitions from Near-Surface to Interior Redox upon Lithiation in Conversion Electrode Materials
journal, January 2015

  • He, Kai; Xin, Huolin L.; Zhao, Kejie
  • Nano Letters, Vol. 15, Issue 2
  • DOI: 10.1021/nl5049884

Strong growth orientation dependence of strain relaxation in epitaxial (Ba,Sr)TiO 3 films and the resulting dielectric properties
journal, May 2011

  • Yamada, Tomoaki; Kamo, Takafumi; Funakubo, Hiroshi
  • Journal of Applied Physics, Vol. 109, Issue 9
  • DOI: 10.1063/1.3581203

Three-dimensional analysis of dislocation networks in GaN using weak-beam dark-field electron tomography
journal, October 2006


Dislocations in SrTiO 3 thin films grown on LaAlO 3 substrates
journal, December 2002

  • Qin, Y. L.; Jia, C. L.; Urban, K.
  • Journal of Materials Research, Vol. 17, Issue 12
  • DOI: 10.1557/JMR.2002.0451

Interfacial structure in epitaxial perovskite oxides on (001) Ge crystal
journal, January 2015

  • Shen, Xuan; Ahmadi-Majlan, K.; Ngai, Joseph H.
  • Applied Physics Letters, Vol. 106, Issue 3
  • DOI: 10.1063/1.4906430

Works referencing / citing this record:

Misfit strain relaxations of (101)-oriented ferroelectric PbTiO 3 /(La, Sr)(Al, Ta)O 3 thin film systems
journal, December 2018

  • Feng, Yanpeng; Tang, Yunlong; Zhu, Yinlian
  • Journal of Materials Research, Vol. 33, Issue 24
  • DOI: 10.1557/jmr.2018.422