Title: Band Gap Dependence on Cation Disorder in ZnSnN 2 Solar Absorber

Journal Article · · Advanced Energy Materials
 [1];  [2];  [3];  [1];  [4];  [3];  [5]
  1. Stephenson Institute for Renewable Energy and Department of Physics School of Physical Sciences University of Liverpool Liverpool L69 7ZF UK
  2. Department of Physics University at Buffalo Buffalo NY 14260 USA
  3. Department of Physics Applied Physics and Astronomy Binghamton University Binghamton NY 13902 USA
  4. Kathleen Lonsdale Materials Chemistry Department of Chemistry University College London London WC1H 0AJ UK, Diamond Light Source Ltd. Diamond House Harwell Science and Innovation Campus Didcot Oxfordshire OX11 0DE UK
  5. Department of Electrical and Computer Engineering Western Michigan University Kalamazoo MI 49008 USA
+ Show Author Affiliations

Not Available

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-98CH10886
OSTI ID:
1224662
Journal Information:
Advanced Energy Materials, Journal Name: Advanced Energy Materials Journal Issue: 24 Vol. 5; ISSN 1614-6832
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

References (24)

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN 2 journal February 2013
Phase Stability and Defect Physics of a Ternary ZnSnN 2 Semiconductor: First Principles Insights journal October 2013
Bandgap Tunability in Zn(Sn,Ge)N 2 Semiconductor Alloys journal December 2013
Growth of ZnSnN2 by Molecular Beam Epitaxy journal January 2014
Combinatorial insights into doping control and transport properties of zinc tin nitride journal January 2015
Quantitative determination of the order parameter in epitaxial layers of ZnSnP2 journal April 2000
Screened hybrid density functionals applied to solids journal April 2006
Toward reliable density functional methods without adjustable parameters: The PBE0 model journal April 1999
Growth, disorder, and physical properties of ZnSnN 2 journal July 2013
The Interpretation of the Properties of Indium Antimonide journal October 1954
Anomalous Optical Absorption Limit in InSb journal February 1954
Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium journal May 1994
Projector augmented-wave method journal December 1994
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Effects of the narrow band gap on the properties of InN journal November 2002
Quasiparticle band structure of Zn-IV-N 2 compounds journal October 2011
Hard x-ray photoelectron spectroscopy as a probe of the intrinsic electronic properties of CdO journal January 2014
Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule journal May 2015
Special quasirandom structures journal July 1990
Generalized Gradient Approximation Made Simple journal October 1996
Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions
  • Hoke, W. E.; Torabi, A.; Mosca, J. J.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 3 https://doi.org/10.1116/1.2716003
journal January 2007
Determination of the basic optical parameters of ZnSnN_2 journal January 2015
Synthesis, lattice structure, and band gap of ZnSnN 2 journal June 2013

Similar Records

Band Gap Dependence on Cation Disorder in ZnSnN 2 Solar Absorber
Journal Article · 2015 · Advanced Energy Materials · OSTI ID:1354275
+4 more
Growth of ordered and disordered ZnSnN 2
Journal Article · 2017 · Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics · OSTI ID:1355050
+4 more
Growth, disorder, and physical properties of ZnSnN{sub 2}
Journal Article · 2013 · Applied Physics Letters · OSTI ID:22218305
+11 more

Related Subjects