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Title: Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [2]
  1. School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Publication Date:
Grant/Contract Number:
AC04-94AL85000; AC52-06NA25396
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 105 Journal Issue: 19; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1224296

Yu, Wenlong, Jiang, Yuxuan, Huan, Chao, Chen, Xunchi, Jiang, Zhigang, Hawkins, Samuel D., Klem, John F., and Pan, Wei. Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes. United States: N. p., Web. doi:10.1063/1.4901965.
Yu, Wenlong, Jiang, Yuxuan, Huan, Chao, Chen, Xunchi, Jiang, Zhigang, Hawkins, Samuel D., Klem, John F., & Pan, Wei. Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes. United States. doi:10.1063/1.4901965.
Yu, Wenlong, Jiang, Yuxuan, Huan, Chao, Chen, Xunchi, Jiang, Zhigang, Hawkins, Samuel D., Klem, John F., and Pan, Wei. 2014. "Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes". United States. doi:10.1063/1.4901965.
@article{osti_1224296,
title = {Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes},
author = {Yu, Wenlong and Jiang, Yuxuan and Huan, Chao and Chen, Xunchi and Jiang, Zhigang and Hawkins, Samuel D. and Klem, John F. and Pan, Wei},
abstractNote = {},
doi = {10.1063/1.4901965},
journal = {Applied Physics Letters},
number = 19,
volume = 105,
place = {United States},
year = {2014},
month = {11}
}