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Title: Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

Authors:
 [1];  [1]
  1. Department of Chemical Engineering, University of Washington, Seattle, Washington 98105, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1224277
Grant/Contract Number:  
EE0005321
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 116 Journal Issue: 17; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Katahara, John K., and Hillhouse, Hugh W. Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence. United States: N. p., 2014. Web. doi:10.1063/1.4898346.
Katahara, John K., & Hillhouse, Hugh W. Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence. United States. doi:10.1063/1.4898346.
Katahara, John K., and Hillhouse, Hugh W. Wed . "Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence". United States. doi:10.1063/1.4898346.
@article{osti_1224277,
title = {Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence},
author = {Katahara, John K. and Hillhouse, Hugh W.},
abstractNote = {},
doi = {10.1063/1.4898346},
journal = {Journal of Applied Physics},
number = 17,
volume = 116,
place = {United States},
year = {2014},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4898346

Citation Metrics:
Cited by: 24 works
Citation information provided by
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Works referenced in this record:

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

  • Shockley, William; Queisser, Hans J.
  • Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
  • DOI: 10.1063/1.1736034