Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

Katahara, John K.; Hillhouse, Hugh W.

doi:10.1063/1.4898346

Title: Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

Authors:

Katahara, John K. ^[1]; Hillhouse, Hugh W. ^[1]

Department of Chemical Engineering, University of Washington, Seattle, Washington 98105, USA

Publication Date:: Wed Nov 05 00:00:00 EST 2014

Sponsoring Org.:: USDOE

OSTI Identifier:: 1224277

Grant/Contract Number:: EE0005321

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 116 Journal Issue: 17; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Katahara, John K., and Hillhouse, Hugh W. Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence.  United States: N. p., 2014. 
Web.  doi:10.1063/1.4898346.

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                    Katahara, John K., & Hillhouse, Hugh W. Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence.  United States.  https://doi.org/10.1063/1.4898346

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                    Katahara, John K., and Hillhouse, Hugh W. Wed .  
"Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence".  United States.  https://doi.org/10.1063/1.4898346.

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@article{osti_1224277,

  title        = {Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence},

  author       = {Katahara, John K. and Hillhouse, Hugh W.},

  abstractNote = {},

  doi          = {10.1063/1.4898346},

  journal      = {Journal of Applied Physics},

  number       = 17,

  volume       = 116,

  place        = {United States},

  year         = {Wed Nov 05 00:00:00 EST 2014},

  month        = {Wed Nov 05 00:00:00 EST 2014}

}

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Works referenced in this record:

The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids
journal, December 1953

Urbach, Franz
Physical Review, Vol. 92, Issue 5
DOI: 10.1103/PhysRev.92.1324

A low-temperature order-disorder transition in Cu ₂ ZnSnS ₄ thin films
journal, January 2014

Scragg, Jonathan J. S.; Choubrac, Léo; Lafond, Alain
Applied Physics Letters, Vol. 104, Issue 4
DOI: 10.1063/1.4863685

Electron diffusion lengths in liquid‐phase epitaxial p ‐GaAs:Ge layers determined by electron‐beam‐induced current method
journal, February 1982

Shen, C. C.; Pande, K. P.; Pearson, G. L.
Journal of Applied Physics, Vol. 53, Issue 2
DOI: 10.1063/1.330536

8% Efficient Cu ₂ ZnSn(S,Se) ₄ Solar Cells from Redox Equilibrated Simple Precursors in DMSO
journal, April 2014

Xin, Hao; Katahara, John K.; Braly, Ian L.
Advanced Energy Materials, Vol. 4, Issue 11
DOI: 10.1002/aenm.201301823

Radiative efficiency limits of solar cells with lateral band-gap fluctuations
journal, May 2004

Rau, U.; Werner, J. H.
Applied Physics Letters, Vol. 84, Issue 19
DOI: 10.1063/1.1737071

Solvable Model of a Hydrogenic System in a Strong Electric Field: Application to Optical Absorption in Semiconductors
journal, May 1966

Duke, C. B.; Alferieff, M. E.
Physical Review, Vol. 145, Issue 2
DOI: 10.1103/PhysRev.145.583

Luminescence and current-voltage characteristics of solar cells and optoelectronic devices
journal, January 1992

Smestad, G.; Ries, H.
Solar Energy Materials and Solar Cells, Vol. 25, Issue 1-2
DOI: 10.1016/0927-0248(92)90016-I

On the Interaction of Radiation with Matter and on Fluorescent Exciting Power
journal, October 1926

Kennard, E. H.
Physical Review, Vol. 28, Issue 4
DOI: 10.1103/PhysRev.28.672

Characterization of CuIn(Ga)Se2 Thin Films
journal, July 1998

Dirnstorfer, I.; Wagner, Mt.; Hofmann, D. M.
physica status solidi (a), Vol. 168, Issue 1
DOI: 10.1002/(SICI)1521-396X(199807)168:1<163::AID-PSSA163>3.0.CO;2-T

Photoluminescence and electrical study of fluctuating potentials in Cu $_{2}$ ZnSnS $_{4}$ -based thin films
journal, July 2011

Leitão, J. P.; Santos, N. M.; Fernandes, P. A.
Physical Review B, Vol. 84, Issue 2
DOI: 10.1103/PhysRevB.84.024120

Ink formulation and low-temperature incorporation of sodium to yield 12% efficient Cu(In,Ga)(S,Se) ₂ solar cells from sulfide nanocrystal inks : Ink formulation and low-temperature incorporation of sodium
journal, May 2012

Guo, Qijie; Ford, Grayson M.; Agrawal, Rakesh
Progress in Photovoltaics: Research and Applications, Vol. 21, Issue 1
DOI: 10.1002/pip.2200

Photon-Radiative Recombination of Electrons and Holes in Germanium
journal, June 1954

van Roosbroeck, W.; Shockley, W.
Physical Review, Vol. 94, Issue 6
DOI: 10.1103/PhysRev.94.1558

Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4
journal, March 2010

Persson, Clas
Journal of Applied Physics, Vol. 107, Issue 5
DOI: 10.1063/1.3318468

The chemical potential of radiation
journal, June 1982

Wurfel, P.
Journal of Physics C: Solid State Physics, Vol. 15, Issue 18
DOI: 10.1088/0022-3719/15/18/012

Theory of band tails in heavily doped semiconductors
journal, July 1992

Van Mieghem, Piet
Reviews of Modern Physics, Vol. 64, Issue 3
DOI: 10.1103/RevModPhys.64.755

Physics of Solar Cells
book, January 2005

Würfel, Peter
DOI: 10.1002/9783527618545

Luminescence of Cu ₂ ZnSnS ₄ polycrystals described by the fluctuating potential model
journal, June 2013

Halliday, D. P.; Claridge, R.; Goodman, M. C. J.
Journal of Applied Physics, Vol. 113, Issue 22
DOI: 10.1063/1.4810846

On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation
journal, May 2012

Bhattacharya, Rupak; Pal, Bipul; Bansal, Bhavtosh
Applied Physics Letters, Vol. 100, Issue 22
DOI: 10.1063/1.4721495

Spontaneous and Stimulated Recombination Radiation in Semiconductors
journal, January 1964

Lasher, Gordon; Stern, Frank
Physical Review, Vol. 133, Issue 2A
DOI: 10.1103/PhysRev.133.A553

Some Thermodynamics of Photochemical Systems
journal, June 1967

Ross, Robert T.
The Journal of Chemical Physics, Vol. 46, Issue 12
DOI: 10.1063/1.1840606

Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1−xGax)Se2 thin films versus optical band gap
journal, June 2005

Bauer, G. H.; Brüggemann, R.; Tardon, S.
Thin Solid Films, Vol. 480-481
DOI: 10.1016/j.tsf.2004.11.061

Impurity-Band Tails in the High-Density Limit. I. Minimum Counting Methods
journal, August 1966

Halperin, B. I.; Lax, Melvin
Physical Review, Vol. 148, Issue 2
DOI: 10.1103/PhysRev.148.722

On The Thermodynamics of Fluorescence
journal, January 1918

Kennard, E. H.
Physical Review, Vol. 11, Issue 1
DOI: 10.1103/PhysRev.11.29

Concentration dependence of the absorption coefficient for n − and p −type GaAs between 1.3 and 1.6 eV
journal, January 1975

Casey, H. C.; Sell, D. D.; Wecht, K. W.
Journal of Applied Physics, Vol. 46, Issue 1
DOI: 10.1063/1.321330

Electronic Properties of Doped Semiconductors
book, January 1984

Shklovskii, Boris I.; Efros, Alex L.
Springer Series in Solid-State Sciences
DOI: 10.1007/978-3-662-02403-4

Acceptor-to-Band Transitions in Semiconductors: Photoluminescence, Exponential Absorption Edges, and Final-State Interactions
journal, November 1973

Dow, John D.; Smith, Darryl Lyle; Lederman, Frank L.
Physical Review B, Vol. 8, Issue 10
DOI: 10.1103/PhysRevB.8.4612

Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon
journal, November 1981

Cody, G. D.; Tiedje, T.; Abeles, B.
Physical Review Letters, Vol. 47, Issue 20
DOI: 10.1103/PhysRevLett.47.1480

Thomas-Fermi Approach to Impure Semiconductor Band Structure
journal, July 1963

Kane, Evan O.
Physical Review, Vol. 131, Issue 1
DOI: 10.1103/PhysRev.131.79

Determination of conduction band tail and Fermi energy of heavily Si‐doped GaAs by room‐temperature photoluminescence
journal, September 1995

Lee, Nam‐Young; Lee, Kyu‐Jang; Lee, Chul
Journal of Applied Physics, Vol. 78, Issue 5
DOI: 10.1063/1.359963

Light absorption and emission in semiconductors with band gap fluctuations—A study on Cu(In,Ga)Se2 thin films
journal, June 2007

Mattheis, Julian; Rau, Uwe; Werner, Jürgen H.
Journal of Applied Physics, Vol. 101, Issue 11
DOI: 10.1063/1.2721768

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

Shockley, William; Queisser, Hans J.
Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
DOI: 10.1063/1.1736034

Optical Absorption in the Presence of a Uniform Field
journal, June 1963

Tharmalingam, K.
Physical Review, Vol. 130, Issue 6
DOI: 10.1103/PhysRev.130.2204

The Role of Spatial Potential Fluctuations in the Shape of the PL Bands of Multinary Semiconductor Compounds
journal, January 1999

Krustok, J.; Collan, H.; Yakushev, M.
Physica Scripta, Vol. T79, Issue 1
DOI: 10.1238/Physica.Topical.079a00179

Einfluß eines elektrischen Feldes auf eine optische Absorptionskante
journal, January 1958

Franz, Walter
Zeitschrift für Naturforschung A, Vol. 13, Issue 6
DOI: 10.1515/zna-1958-0609

Band tailing and efficiency limitation in kesterite solar cells
journal, September 2013

Gokmen, Tayfun; Gunawan, Oki; Todorov, Teodor K.
Applied Physics Letters, Vol. 103, Issue 10
DOI: 10.1063/1.4820250

Anomalous Urbach tail in GaAs
journal, January 1995

Greeff, C. W.; Glyde, H. R.
Physical Review B, Vol. 51, Issue 3
DOI: 10.1103/PhysRevB.51.1778

Edge luminescence of direct-gap semiconductors [Kraevaya lyuminestsentsiya pryamozonnykh poluprovodnikov]
journal, January 1981

Levanyuk, A. P.; Osipov, V. V.
Uspekhi Fizicheskih Nauk, Vol. 133, Issue 3
DOI: 10.3367/UFNr.0133.198103b.0427

Multinuclear (67Zn, 119Sn and 65Cu) NMR spectroscopy – an ideal technique to probe the cationic ordering in Cu2ZnSnS4 photovoltaic materials
journal, January 2013

Choubrac, Léo; Paris, Michaël; Lafond, Alain
Physical Chemistry Chemical Physics, Vol. 15, Issue 26
DOI: 10.1039/c3cp51320c

Efficiency limitations of polycrystalline thin film solar cells: case of Cu(In,Ga)Se2
journal, June 2005

Werner, Jürgen H.; Mattheis, Julian; Rau, Uwe
Thin Solid Films, Vol. 480-481
DOI: 10.1016/j.tsf.2004.11.052

Influence of selenization techniques on the reaction kinetics of chalcopyrite thin films
journal, May 2001

Bekker, J.; Alberts, V.; Witcomb, M. J.
Thin Solid Films, Vol. 387, Issue 1-2
DOI: 10.1016/S0040-6090(01)00797-0

Ueber das Verhältniss zwischen dem Emissionsvermögen und dem Absorptionsvermögen der Körper für Wärme und Licht
journal, January 1860

Kirchhoff, G.
Annalen der Physik und Chemie, Vol. 185, Issue 2
DOI: 10.1002/andp.18601850205

Potential fluctuations in compensated chalcopyrites
journal, April 2006

Siebentritt, S.; Papathanasiou, N.; Lux-Steiner, M. Ch.
Physica B: Condensed Matter, Vol. 376-377
DOI: 10.1016/j.physb.2005.12.208

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Title: Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

Citation Formats

The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids journal, December 1953

A low-temperature order-disorder transition in Cu 2 ZnSnS 4 thin films journal, January 2014

Electron diffusion lengths in liquid‐phase epitaxial p ‐GaAs:Ge layers determined by electron‐beam‐induced current method journal, February 1982

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Solvable Model of a Hydrogenic System in a Strong Electric Field: Application to Optical Absorption in Semiconductors journal, May 1966

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On the Interaction of Radiation with Matter and on Fluorescent Exciting Power journal, October 1926

Characterization of CuIn(Ga)Se2 Thin Films journal, July 1998

Photoluminescence and electrical study of fluctuating potentials in Cu 2 ZnSnS 4 -based thin films journal, July 2011

Ink formulation and low-temperature incorporation of sodium to yield 12% efficient Cu(In,Ga)(S,Se) 2 solar cells from sulfide nanocrystal inks : Ink formulation and low-temperature incorporation of sodium journal, May 2012

Photon-Radiative Recombination of Electrons and Holes in Germanium journal, June 1954

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Theory of band tails in heavily doped semiconductors journal, July 1992

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On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation journal, May 2012

Spontaneous and Stimulated Recombination Radiation in Semiconductors journal, January 1964

Some Thermodynamics of Photochemical Systems journal, June 1967

Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1−xGax)Se2 thin films versus optical band gap journal, June 2005

Impurity-Band Tails in the High-Density Limit. I. Minimum Counting Methods journal, August 1966

On The Thermodynamics of Fluorescence journal, January 1918

Concentration dependence of the absorption coefficient for n − and p −type GaAs between 1.3 and 1.6 eV journal, January 1975

Electronic Properties of Doped Semiconductors book, January 1984

Acceptor-to-Band Transitions in Semiconductors: Photoluminescence, Exponential Absorption Edges, and Final-State Interactions journal, November 1973

Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon journal, November 1981

Thomas-Fermi Approach to Impure Semiconductor Band Structure journal, July 1963

Determination of conduction band tail and Fermi energy of heavily Si‐doped GaAs by room‐temperature photoluminescence journal, September 1995

Light absorption and emission in semiconductors with band gap fluctuations—A study on Cu(In,Ga)Se2 thin films journal, June 2007

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells journal, March 1961

Optical Absorption in the Presence of a Uniform Field journal, June 1963

The Role of Spatial Potential Fluctuations in the Shape of the PL Bands of Multinary Semiconductor Compounds journal, January 1999

Einfluß eines elektrischen Feldes auf eine optische Absorptionskante journal, January 1958

Band tailing and efficiency limitation in kesterite solar cells journal, September 2013

Anomalous Urbach tail in GaAs journal, January 1995

Edge luminescence of direct-gap semiconductors [Kraevaya lyuminestsentsiya pryamozonnykh poluprovodnikov] journal, January 1981

Multinuclear (67Zn, 119Sn and 65Cu) NMR spectroscopy – an ideal technique to probe the cationic ordering in Cu2ZnSnS4 photovoltaic materials journal, January 2013

Efficiency limitations of polycrystalline thin film solar cells: case of Cu(In,Ga)Se2 journal, June 2005

Influence of selenization techniques on the reaction kinetics of chalcopyrite thin films journal, May 2001

Ueber das Verhältniss zwischen dem Emissionsvermögen und dem Absorptionsvermögen der Körper für Wärme und Licht journal, January 1860

Potential fluctuations in compensated chalcopyrites journal, April 2006

The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids
journal, December 1953

A low-temperature order-disorder transition in Cu ₂ ZnSnS ₄ thin films
journal, January 2014

Electron diffusion lengths in liquid‐phase epitaxial p ‐GaAs:Ge layers determined by electron‐beam‐induced current method
journal, February 1982

8% Efficient Cu ₂ ZnSn(S,Se) ₄ Solar Cells from Redox Equilibrated Simple Precursors in DMSO
journal, April 2014

Radiative efficiency limits of solar cells with lateral band-gap fluctuations
journal, May 2004

Solvable Model of a Hydrogenic System in a Strong Electric Field: Application to Optical Absorption in Semiconductors
journal, May 1966

Luminescence and current-voltage characteristics of solar cells and optoelectronic devices
journal, January 1992

On the Interaction of Radiation with Matter and on Fluorescent Exciting Power
journal, October 1926

Characterization of CuIn(Ga)Se2 Thin Films
journal, July 1998

Photoluminescence and electrical study of fluctuating potentials in Cu $_{2}$ ZnSnS $_{4}$ -based thin films
journal, July 2011

Ink formulation and low-temperature incorporation of sodium to yield 12% efficient Cu(In,Ga)(S,Se) ₂ solar cells from sulfide nanocrystal inks : Ink formulation and low-temperature incorporation of sodium
journal, May 2012

Photon-Radiative Recombination of Electrons and Holes in Germanium
journal, June 1954

Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4
journal, March 2010

The chemical potential of radiation
journal, June 1982

Theory of band tails in heavily doped semiconductors
journal, July 1992

Physics of Solar Cells
book, January 2005

Luminescence of Cu ₂ ZnSnS ₄ polycrystals described by the fluctuating potential model
journal, June 2013

On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation
journal, May 2012

Spontaneous and Stimulated Recombination Radiation in Semiconductors
journal, January 1964

Some Thermodynamics of Photochemical Systems
journal, June 1967

Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1−xGax)Se2 thin films versus optical band gap
journal, June 2005

Impurity-Band Tails in the High-Density Limit. I. Minimum Counting Methods
journal, August 1966

On The Thermodynamics of Fluorescence
journal, January 1918

Concentration dependence of the absorption coefficient for n − and p −type GaAs between 1.3 and 1.6 eV
journal, January 1975

Electronic Properties of Doped Semiconductors
book, January 1984

Acceptor-to-Band Transitions in Semiconductors: Photoluminescence, Exponential Absorption Edges, and Final-State Interactions
journal, November 1973

Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon
journal, November 1981

Thomas-Fermi Approach to Impure Semiconductor Band Structure
journal, July 1963

Determination of conduction band tail and Fermi energy of heavily Si‐doped GaAs by room‐temperature photoluminescence
journal, September 1995

Light absorption and emission in semiconductors with band gap fluctuations—A study on Cu(In,Ga)Se2 thin films
journal, June 2007

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

Optical Absorption in the Presence of a Uniform Field
journal, June 1963

The Role of Spatial Potential Fluctuations in the Shape of the PL Bands of Multinary Semiconductor Compounds
journal, January 1999

Einfluß eines elektrischen Feldes auf eine optische Absorptionskante
journal, January 1958

Band tailing and efficiency limitation in kesterite solar cells
journal, September 2013

Anomalous Urbach tail in GaAs
journal, January 1995

Edge luminescence of direct-gap semiconductors [Kraevaya lyuminestsentsiya pryamozonnykh poluprovodnikov]
journal, January 1981

Multinuclear (67Zn, 119Sn and 65Cu) NMR spectroscopy – an ideal technique to probe the cationic ordering in Cu2ZnSnS4 photovoltaic materials
journal, January 2013

Efficiency limitations of polycrystalline thin film solar cells: case of Cu(In,Ga)Se2
journal, June 2005

Influence of selenization techniques on the reaction kinetics of chalcopyrite thin films
journal, May 2001

Ueber das Verhältniss zwischen dem Emissionsvermögen und dem Absorptionsvermögen der Körper für Wärme und Licht
journal, January 1860

Potential fluctuations in compensated chalcopyrites
journal, April 2006