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Title: Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Authors:
 [1];  [2];  [1];  [2];  [1]; ORCiD logo [3];  [4];  [5];  [6];  [3];  [2];  [4];  [2]
+ Show Author Affiliations
  1. CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz, France
  2. Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz, France
  3. CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis, France
  4. Université de Lorraine, Supélec, LMOPS, EA4423, 57070 Metz, France
  5. Université des Sciences et Technologies de Lille, CNRS, UMR 8520 IEMN, 59000 Lille, France
  6. Advanced Photon Source, 9700 S. Cass Avenue, Argonne, Illinois 60439, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1224255
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 116 Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Sundaram, S., Puybaret, R., El Gmili, Y., Li, X., Bonanno, P. L., Pantzas, K., Orsal, G., Troadec, D., Cai, Z. -H., Patriarche, G., Voss, P. L., Salvestrini, J. P., and Ougazzaden, A. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template. United States: N. p., 2014. Web. doi:10.1063/1.4900531.
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Sundaram, S., Puybaret, R., El Gmili, Y., Li, X., Bonanno, P. L., Pantzas, K., Orsal, G., Troadec, D., Cai, Z. -H., Patriarche, G., Voss, P. L., Salvestrini, J. P., & Ougazzaden, A. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template. United States. https://doi.org/10.1063/1.4900531
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Sundaram, S., Puybaret, R., El Gmili, Y., Li, X., Bonanno, P. L., Pantzas, K., Orsal, G., Troadec, D., Cai, Z. -H., Patriarche, G., Voss, P. L., Salvestrini, J. P., and Ougazzaden, A. Tue . "Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template". United States. https://doi.org/10.1063/1.4900531.
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@article{osti_1224255,
title = {Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template},
author = {Sundaram, S. and Puybaret, R. and El Gmili, Y. and Li, X. and Bonanno, P. L. and Pantzas, K. and Orsal, G. and Troadec, D. and Cai, Z. -H. and Patriarche, G. and Voss, P. L. and Salvestrini, J. P. and Ougazzaden, A.},
abstractNote = {},
doi = {10.1063/1.4900531},
journal = {Journal of Applied Physics},
number = 16,
volume = 116,
place = {United States},
year = {Tue Oct 28 00:00:00 EDT 2014},
month = {Tue Oct 28 00:00:00 EDT 2014}
}
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Accepted Manuscript (Publisher)
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https://doi.org/10.1063/1.4900531
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