Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios
Abstract
Cu(In1–x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In + Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In + Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher band gap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In + Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In + Ga) ratios. Moreover, it was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In + Ga) ratios. Furthermore, the surface roughness generally decreases if the Ga grading occurs deeper in the absorbermore »
- Authors:
-
- State Univ. of New York Polytechnic Institute, Albany, NY (United States)
- Angstrom Sun Technologies Inc., Acton, MA (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., Stony Brook, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- OSTI Identifier:
- 1224189
- Alternate Identifier(s):
- OSTI ID: 1245376; OSTI ID: 1359222
- Report Number(s):
- BNL-108442-2015-JA; BNL-111833-2016-JA
Journal ID: ISSN 0925-8388; R&D Project: YN0100000
- Grant/Contract Number:
- SC00112704; EE0004947; SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Alloys and Compounds
- Additional Journal Information:
- Journal Name: Journal of Alloys and Compounds; Journal ID: ISSN 0925-8388
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; energy storage materials; semiconductors; thin films; photovoltaics; atomic force microscopy (AFM); scanning electron microscopy (SEM)
Citation Formats
Claypoole, Jesse, Peace, Bernadette, Sun, Neville, Dwyer, Dan, Eisaman, Matthew D., Haldar, Pradeep, and Efstathiadis, Harry. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios. United States: N. p., 2015.
Web. doi:10.1016/j.jallcom.2015.09.006.
Claypoole, Jesse, Peace, Bernadette, Sun, Neville, Dwyer, Dan, Eisaman, Matthew D., Haldar, Pradeep, & Efstathiadis, Harry. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios. United States. https://doi.org/10.1016/j.jallcom.2015.09.006
Claypoole, Jesse, Peace, Bernadette, Sun, Neville, Dwyer, Dan, Eisaman, Matthew D., Haldar, Pradeep, and Efstathiadis, Harry. Sat .
"Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios". United States. https://doi.org/10.1016/j.jallcom.2015.09.006. https://www.osti.gov/servlets/purl/1224189.
@article{osti_1224189,
title = {Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios},
author = {Claypoole, Jesse and Peace, Bernadette and Sun, Neville and Dwyer, Dan and Eisaman, Matthew D. and Haldar, Pradeep and Efstathiadis, Harry},
abstractNote = {Cu(In1–x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In + Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In + Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher band gap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In + Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In + Ga) ratios. Moreover, it was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In + Ga) ratios. Furthermore, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.},
doi = {10.1016/j.jallcom.2015.09.006},
journal = {Journal of Alloys and Compounds},
number = ,
volume = ,
place = {United States},
year = {Sat Sep 05 00:00:00 EDT 2015},
month = {Sat Sep 05 00:00:00 EDT 2015}
}
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journal, July 2017
- Larsson, Fredrik; Nilsson, Nina Shariati; Keller, Jan
- Progress in Photovoltaics: Research and Applications, Vol. 25, Issue 9
2016 Atomic Spectrometry Update – a review of advances in X-ray fluorescence spectrometry and its applications
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Quantitative Analysis and Band Gap Determination for CIGS Absorber Layers Using Surface Techniques
journal, October 2018
- Jang, Yun Jung; Lee, Jihye; Lee, Kang-Bong
- Journal of Analytical Methods in Chemistry, Vol. 2018
Bandgap profiling in CIGS solar cells via valence electron energy-loss spectroscopy
journal, March 2018
- Deitz, Julia I.; Karki, Shankar; Marsillac, Sylvain X.
- Journal of Applied Physics, Vol. 123, Issue 11