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Title: Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching

Authors:
;
Publication Date:
Grant/Contract Number:
FG02-07ER15920
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 4; Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1224140

Qi, Yubo, and Rappe, Andrew M. Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching. United States: N. p., Web. doi:10.1103/PhysRevApplied.4.044014.
Qi, Yubo, & Rappe, Andrew M. Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching. United States. doi:10.1103/PhysRevApplied.4.044014.
Qi, Yubo, and Rappe, Andrew M. 2015. "Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching". United States. doi:10.1103/PhysRevApplied.4.044014.
@article{osti_1224140,
title = {Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching},
author = {Qi, Yubo and Rappe, Andrew M.},
abstractNote = {},
doi = {10.1103/PhysRevApplied.4.044014},
journal = {Physical Review Applied},
number = 4,
volume = 4,
place = {United States},
year = {2015},
month = {10}
}