Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells

Authors:
ORCiD logo [1];  [1];  [1];  [1]
+ Show Author Affiliations
  1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1223565
Grant/Contract Number:  
EEC-1041895
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 107 Journal Issue: 15; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Yeongho, Ban, Keun-Yong, Zhang, Chaomin, and Honsberg, Christiana B. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells. United States: N. p., 2015. Web. doi:10.1063/1.4933272.
Copy to clipboard
Kim, Yeongho, Ban, Keun-Yong, Zhang, Chaomin, & Honsberg, Christiana B. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells. United States. https://doi.org/10.1063/1.4933272
Copy to clipboard
Kim, Yeongho, Ban, Keun-Yong, Zhang, Chaomin, and Honsberg, Christiana B. Wed . "Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells". United States. https://doi.org/10.1063/1.4933272.
Copy to clipboard
@article{osti_1223565,
title = {Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells},
author = {Kim, Yeongho and Ban, Keun-Yong and Zhang, Chaomin and Honsberg, Christiana B.},
abstractNote = {},
doi = {10.1063/1.4933272},
journal = {Applied Physics Letters},
number = 15,
volume = 107,
place = {United States},
year = {2015},
month = {10}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Accepted Manuscript (Publisher)
Publisher's Version of Record
https://doi.org/10.1063/1.4933272
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices
journal, March 2009

The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept
journal, January 2010

Mechanism of formation of the misfit dislocations at the cubic materials interfaces
journal, June 2012

  • Wang, Yi; Ruterana, P.; Kret, S.
  • Applied Physics Letters, Vol. 100, Issue 26
  • DOI: 10.1063/1.4731787

Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
journal, June 1997

Elements of the design and analysis of quantum-dot intermediate band solar cells
journal, August 2008

Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots
journal, May 2003

Submonolayer quantum dot infrared photodetector
journal, March 2009

  • Ting, David Z. -Y.; Bandara, Sumith V.; Gunapala, Sarath D.
  • Applied Physics Letters, Vol. 94, Issue 11
  • DOI: 10.1063/1.3095812

The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
journal, January 1994

Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots
journal, January 2013

  • Sun, Meng; Simmonds, Paul J.; Babu Laghumavarapu, Ramesh
  • Applied Physics Letters, Vol. 102, Issue 2
  • DOI: 10.1063/1.4776221

Emitter degradation in quantum dot intermediate band solar cells
journal, June 2007

  • Martí, A.; López, N.; Antolín, E.
  • Applied Physics Letters, Vol. 90, Issue 23
  • DOI: 10.1063/1.2747195

InAs/GaAsSb quantum dot solar cells
journal, January 2014

  • Hatch, Sabina; Wu, Jiang; Sablon, Kimberly
  • Optics Express, Vol. 22, Issue S3
  • DOI: 10.1364/OE.22.00A679

Microstructural evolution during the heteroepitaxy of Ge on vicinal Si(100)
journal, May 1991

  • Krishnamurthy, Mohan; Drucker, J. S.; Venables, J. A.
  • Journal of Applied Physics, Vol. 69, Issue 9
  • DOI: 10.1063/1.348852

High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers
journal, May 2011

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots
journal, June 2003

  • Xu, Zhangcheng; Birkedal, Dan; Hvam, Jørn M.
  • Applied Physics Letters, Vol. 82, Issue 22
  • DOI: 10.1063/1.1581005

Effect of strain compensation on quantum dot enhanced GaAs solar cells
journal, March 2008

  • Hubbard, S. M.; Cress, C. D.; Bailey, C. G.
  • Applied Physics Letters, Vol. 92, Issue 12
  • DOI: 10.1063/1.2903699

InAs quantum dots in a single-crystal GaAs matrix
journal, October 1991

Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence
journal, May 2012

  • Ban, Keun-Yong; Kuciauskas, Darius; Bremner, Stephen P.
  • Journal of Applied Physics, Vol. 111, Issue 10
  • DOI: 10.1063/1.4717766

Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots
journal, May 2010

  • Ban, Keun-Yong; Bremner, Stephen P.; Liu, Guangming
  • Applied Physics Letters, Vol. 96, Issue 18
  • DOI: 10.1063/1.3409691

Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
journal, September 2010

  • Antolín, E.; Martí, A.; Farmer, C. D.
  • Journal of Applied Physics, Vol. 108, Issue 6
  • DOI: 10.1063/1.3468520

The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)
journal, March 2005

  • Sun, Y.; Cheng, S. F.; Chen, G.
  • Journal of Applied Physics, Vol. 97, Issue 5
  • DOI: 10.1063/1.1858054

Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrix
journal, September 1995

  • Li, Wei; Wang, Zhanguo; Liang, Jiben
  • Applied Physics Letters, Vol. 67, Issue 13
  • DOI: 10.1063/1.114361

Over 100 ns intrinsic radiative recombination lifetime in type II InAs/GaAs 1− x Sb x quantum dots
journal, February 2012

  • Nishikawa, Kazutaka; Takeda, Yasuhiko; Yamanaka, Ken-ichi
  • Journal of Applied Physics, Vol. 111, Issue 4
  • DOI: 10.1063/1.3688864

Submonolayer InGaAs/GaAs quantum dot solar cells
journal, July 2014

Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering
journal, July 2003

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)
journal, September 2013

  • Bremner, S. P.; Ban, K. -Y.; Faleev, N. N.
  • Journal of Applied Physics, Vol. 114, Issue 10
  • DOI: 10.1063/1.4819962

Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer
journal, February 2006

  • Liu, H. Y.; Steer, M. J.; Badcock, T. J.
  • Journal of Applied Physics, Vol. 99, Issue 4
  • DOI: 10.1063/1.2173188

Understanding the operation of quantum dot intermediate band solar cells
journal, February 2012

  • Luque, A.; Linares, P. G.; Antolín, E.
  • Journal of Applied Physics, Vol. 111, Issue 4
  • DOI: 10.1063/1.3684968
    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: