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Title: Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells

Authors:
ORCiD logo [1];  [1];  [1];  [1]
  1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1223565
Grant/Contract Number:  
EEC-1041895
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 107 Journal Issue: 15; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Yeongho, Ban, Keun-Yong, Zhang, Chaomin, and Honsberg, Christiana B. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells. United States: N. p., 2015. Web. doi:10.1063/1.4933272.
Kim, Yeongho, Ban, Keun-Yong, Zhang, Chaomin, & Honsberg, Christiana B. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells. United States. doi:10.1063/1.4933272.
Kim, Yeongho, Ban, Keun-Yong, Zhang, Chaomin, and Honsberg, Christiana B. Wed . "Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells". United States. doi:10.1063/1.4933272.
@article{osti_1223565,
title = {Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells},
author = {Kim, Yeongho and Ban, Keun-Yong and Zhang, Chaomin and Honsberg, Christiana B.},
abstractNote = {},
doi = {10.1063/1.4933272},
journal = {Applied Physics Letters},
number = 15,
volume = 107,
place = {United States},
year = {2015},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4933272

Citation Metrics:
Cited by: 5 works
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