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Title: Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared

CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 – 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.
 [1] ;  [2] ;  [1] ;  [3] ;  [1] ;  [1] ;  [2] ;  [4] ;  [3] ;  [5] ;  [1]
  1. Columbia Univ., New York, NY (United States). Microelectronics Sciences Lab.
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
  3. Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
  4. State Univ. of New York, Albany, NY (United States). College of Nanoscale Science and Engineering
  5. IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
Publication Date:
Report Number(s):
Journal ID: ISSN 1094-4087; R&D Project: 16062; KC0403020
Grant/Contract Number:
SC00112704; AC02-98CH10886
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 22; Journal Issue: 22; Journal ID: ISSN 1094-4087
Optical Society of America (OSA)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
42 ENGINEERING; functional nanomaterials
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1182485