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Title: Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides

Authors:
; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-04ER46148
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 115; Journal Issue: 12; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1221703

Huang, Bing, Yoon, Mina, Sumpter, Bobby G., Wei, Su-Huai, and Liu, Feng. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides. United States: N. p., Web. doi:10.1103/PhysRevLett.115.126806.
Huang, Bing, Yoon, Mina, Sumpter, Bobby G., Wei, Su-Huai, & Liu, Feng. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides. United States. doi:10.1103/PhysRevLett.115.126806.
Huang, Bing, Yoon, Mina, Sumpter, Bobby G., Wei, Su-Huai, and Liu, Feng. 2015. "Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides". United States. doi:10.1103/PhysRevLett.115.126806.
@article{osti_1221703,
title = {Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides},
author = {Huang, Bing and Yoon, Mina and Sumpter, Bobby G. and Wei, Su-Huai and Liu, Feng},
abstractNote = {},
doi = {10.1103/PhysRevLett.115.126806},
journal = {Physical Review Letters},
number = 12,
volume = 115,
place = {United States},
year = {2015},
month = {9}
}