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Title: Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substrate surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.
 [1] ;  [2] ;  [3] ;  [2] ;  [2] ;  [4] ;  [5] ;  [6] ;  [6] ;  [7] ;  [8] ;  [2] ;  [2]
  1. Chinese Academy of Sciences (CAS), Shanghai (China); Lanzhou Univ., Lanzhou (China)
  2. Chinese Academy of Sciences (CAS), Shanghai (China)
  3. Lanzhou Univ., Lanzhou (China)
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  5. City Univ. of Hong Kong, Hong Kong (China)
  6. Shanghai Univ., Shanghai (China)
  7. East China Normal Univ. (ECNU), Shanghai (China)
  8. Shanghai Univ., Shanghai (China); State Univ. of New York, Buffalo, NY (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 1616-301X
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 25; Journal Issue: 24; Journal ID: ISSN 1616-301X
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
Country of Publication:
United States
36 MATERIALS SCIENCE; graphene; ion implantation; layer-tunable; theoretical calculation; growth mechanism
OSTI Identifier: