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Title: Radiation Tolerance of 65nm CMOS Transistors

We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [1]
  1. Univ. of Colorado, Boulder, CO (United States)
  2. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Publication Date:
Report Number(s):
FERMILAB-PUB-15-014-E
Journal ID: ISSN 1748-0221; arXiv eprint number arXiv:1501.05966
Grant/Contract Number:
AC02-07CH11359
Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 10; Journal Issue: 12; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Research Org:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; radiation-hard electronics; front-end electronics for detector readout
OSTI Identifier:
1221237

Krohn, M., Bentele, B., Christian, D. C., Cumalat, J. P., Deptuch, G., Fahim, F., Hoff, J., Shenai, A., and Wagner, S. R.. Radiation Tolerance of 65nm CMOS Transistors. United States: N. p., Web. doi:10.1088/1748-0221/10/12/P12007.
Krohn, M., Bentele, B., Christian, D. C., Cumalat, J. P., Deptuch, G., Fahim, F., Hoff, J., Shenai, A., & Wagner, S. R.. Radiation Tolerance of 65nm CMOS Transistors. United States. doi:10.1088/1748-0221/10/12/P12007.
Krohn, M., Bentele, B., Christian, D. C., Cumalat, J. P., Deptuch, G., Fahim, F., Hoff, J., Shenai, A., and Wagner, S. R.. 2015. "Radiation Tolerance of 65nm CMOS Transistors". United States. doi:10.1088/1748-0221/10/12/P12007. https://www.osti.gov/servlets/purl/1221237.
@article{osti_1221237,
title = {Radiation Tolerance of 65nm CMOS Transistors},
author = {Krohn, M. and Bentele, B. and Christian, D. C. and Cumalat, J. P. and Deptuch, G. and Fahim, F. and Hoff, J. and Shenai, A. and Wagner, S. R.},
abstractNote = {We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.},
doi = {10.1088/1748-0221/10/12/P12007},
journal = {Journal of Instrumentation},
number = 12,
volume = 10,
place = {United States},
year = {2015},
month = {12}
}