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Title: 21 THz quantum-cascade laser operating up to 144 K based on a scattering-assisted injection design

A 2.1 THz quantum cascade laser (QCL) based on a scattering-assisted injection and resonant-phonon depopulation design scheme is demonstrated. The QCL is based on a four-well period implemented in the GaAs/Al 0.15Ga 0.85As material system. The QCL operates up to a heat-sink temperature of 144 K in pulsed-mode, which is considerably higher than that achieved for previously reported THz QCLs operating around the frequency of 2 THz. At 46 K, the threshold current-density was measured as ~745 A/cm 2 with a peak-power output of ~10 mW. Electrically stable operation in a positive differential-resistance regime is achieved by a careful choice of design parameters. The results validate the robustness of scattering-assisted injection schemes for development of low-frequency (ν < 2.5 THz) QCLs.
 [1] ;  [2] ;  [1]
  1. Lehigh Univ., Bethlehem, PA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 23; Journal Issue: 15; Journal ID: ISSN 1094-4087
Optical Society of America (OSA)
Research Org:
Sandia National Laboratories (SNL), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
42 ENGINEERING; far infrared or terahertz; semiconductor lasers; quantum cascade
OSTI Identifier: