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Title: Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

The high balance-of-system costs of photovoltaic (PV) installations indicate that reductions in cell $/W costs alone are likely insufficient for PV electricity to reach grid parity unless energy conversion efficiency is also increased. Technologies which yield both high-efficiency cells (>25%) and maintain low costs are needed. GaAs and related III-V semiconductors are used in the highest-efficiency single- and multi-junction photovoltaics, but the technology is too expensive for non-concentrated terrestrial applications. This is due in part to the difficulty of scaling the metal-organic chemical vapor deposition (MOCVD) process, which relies on expensive reactors and employs toxic and pyrophoric gas-phase precursors such as arsine and trimethyl gallium, respectively. In this study, we describe GaAs films made by an alternative close-spaced vapor transport (CSVT) technique which is carried out at atmospheric pressure and requires only bulk GaAs, water vapor, and a temperature gradient in order to deposit crystalline films with similar electronic properties to that of GaAs deposited by MOCVD. CSVT is similar to the vapor transport process used to deposit CdTe thin films and is thus a potentially scalable low-cost route to GaAs thin films.
Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [1]
  1. University of Oregon, Eugene, OR (United States). Department of Chemistry and Biochemistry.
  2. University of Oregon, Eugene, OR (United States). Department of Physics.
  3. University of Oregon, Eugene, OR (United States). Department of Chemistry and Biochemistry
  4. Lawrence Berkeley National Laboratory, Berkeley, CA (United States). The Molecular Foundry.
Publication Date:
Report Number(s):
DOE-UO-05957-1
Journal ID: ISSN 1754-5692; EESNBY
Grant/Contract Number:
AC02-05CH11231; EE00065957; EE0005957
Type:
Accepted Manuscript
Journal Name:
Energy & Environmental Science
Additional Journal Information:
Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 1754-5692
Publisher:
Royal Society of Chemistry
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of Oregon, Eugene, OR (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; photovoltaic cells; gallium arsenide; close-spaced vapor transport (CSVT); III-V semi conductor materials
OSTI Identifier:
1214554
Alternate Identifier(s):
OSTI ID: 1222721