skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene

Abstract

Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigations of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E21g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis ofmore » large-area vdW heterostructures for the development of new optical and optoelectronic devices.« less

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Escuela Politecnica Nacional, Quito (Ecuador)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1214495
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 9; Journal Issue: 8; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; van der Waals epitaxy; heterostructures; GaSe; chemical vapor deposition; graphene

Citation Formats

Li, Xufan, Basile, Leonardo, Huang, Bing, Ma, Cheng, Lee, Jaekwang, Vlassiouk, Ivan V., Puretzky, Alexander A., Lin, Ming -Wei, Chi, Miaofang, Idrobo Tapia, Juan Carlos, Rouleau, Christopher M., Sumpter, Bobby G., Yoon, Mina, Geohegan, David B., and Xiao, Kai. Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene. United States: N. p., 2015. Web. https://doi.org/10.1021/acsnano.5b01943.
Li, Xufan, Basile, Leonardo, Huang, Bing, Ma, Cheng, Lee, Jaekwang, Vlassiouk, Ivan V., Puretzky, Alexander A., Lin, Ming -Wei, Chi, Miaofang, Idrobo Tapia, Juan Carlos, Rouleau, Christopher M., Sumpter, Bobby G., Yoon, Mina, Geohegan, David B., & Xiao, Kai. Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene. United States. https://doi.org/10.1021/acsnano.5b01943
Li, Xufan, Basile, Leonardo, Huang, Bing, Ma, Cheng, Lee, Jaekwang, Vlassiouk, Ivan V., Puretzky, Alexander A., Lin, Ming -Wei, Chi, Miaofang, Idrobo Tapia, Juan Carlos, Rouleau, Christopher M., Sumpter, Bobby G., Yoon, Mina, Geohegan, David B., and Xiao, Kai. Wed . "Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene". United States. https://doi.org/10.1021/acsnano.5b01943. https://www.osti.gov/servlets/purl/1214495.
@article{osti_1214495,
title = {Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene},
author = {Li, Xufan and Basile, Leonardo and Huang, Bing and Ma, Cheng and Lee, Jaekwang and Vlassiouk, Ivan V. and Puretzky, Alexander A. and Lin, Ming -Wei and Chi, Miaofang and Idrobo Tapia, Juan Carlos and Rouleau, Christopher M. and Sumpter, Bobby G. and Yoon, Mina and Geohegan, David B. and Xiao, Kai},
abstractNote = {Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigations of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E21g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.},
doi = {10.1021/acsnano.5b01943},
journal = {ACS Nano},
number = 8,
volume = 9,
place = {United States},
year = {2015},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 28 works
Citation information provided by
Web of Science

Save / Share:

Works referencing / citing this record:

Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors
journal, June 2019

  • Li, Henan; Huang, Jing‐Kai; Shi, Yumeng
  • Advanced Materials Interfaces, Vol. 6, Issue 24
  • DOI: 10.1002/admi.201900220

Chemical and structural stability of 2D layered materials
journal, July 2019


Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors
journal, June 2019

  • Li, Henan; Huang, Jing‐Kai; Shi, Yumeng
  • Advanced Materials Interfaces, Vol. 6, Issue 24
  • DOI: 10.1002/admi.201900220

Chemical and structural stability of 2D layered materials
journal, July 2019


Epitaxy of Layered Orthorhombic SnS-SnS x Se (1− x ) Core-Shell Heterostructures with Anisotropic Photoresponse
journal, April 2016

  • Xia, Jing; Zhu, Dandan; Li, Xuanze
  • Advanced Functional Materials, Vol. 26, Issue 26
  • DOI: 10.1002/adfm.201600699

Ultrasensitive Photoresponsive Devices Based on Graphene/BiI 3 van der Waals Epitaxial Heterostructures
journal, April 2018

  • Chang, Po-Han; Li, Chia-Shuo; Fu, Fang-Yu
  • Advanced Functional Materials, Vol. 28, Issue 23
  • DOI: 10.1002/adfm.201800179

Sulfur‐Mastery: Precise Synthesis of 2D Transition Metal Dichalcogenides
journal, May 2019


Atomic Insight into Thermolysis‐Driven Growth of 2D MoS 2
journal, May 2019

  • Sang, Xiahan; Li, Xufan; Puretzky, Alexander A.
  • Advanced Functional Materials, Vol. 29, Issue 52
  • DOI: 10.1002/adfm.201902149

Controlling Defects in Continuous 2D GaS Films for High‐Performance Wavelength‐Tunable UV‐Discriminating Photodetectors
journal, November 2019


Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family
journal, June 2016


P-GaSe/N-MoS 2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation
journal, January 2018


Recent Advances in Synthesis and Applications of 2D Junctions
journal, August 2018


Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials
journal, May 2018


Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
journal, September 2018


Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy
journal, November 2019


Interlayer coupling of a direct van der Waals epitaxial MoS 2 /graphene heterostructure
journal, January 2016

  • Wan, Wen; Li, Xiaodan; Li, Xiuting
  • RSC Advances, Vol. 6, Issue 1
  • DOI: 10.1039/c5ra22768b

Highly efficient gas molecule-tunable few-layer GaSe phototransistors
journal, January 2016

  • Yang, Shengxue; Yue, Qu; Cai, Hui
  • Journal of Materials Chemistry C, Vol. 4, Issue 2
  • DOI: 10.1039/c5tc03459k

Curvature-dependent flexible light emission from layered gallium selenide crystals
journal, January 2018

  • Chuang, Ching-An; Lin, Min-Han; Yeh, Bo-Xian
  • RSC Advances, Vol. 8, Issue 5
  • DOI: 10.1039/c7ra11600d

Dipole controlled Schottky barrier in the blue-phosphorene-phase of GeSe based van der Waals heterostructures
journal, January 2019

  • Peng, Lei; Cui, Yu; Sun, Liping
  • Nanoscale Horizons, Vol. 4, Issue 2
  • DOI: 10.1039/c8nh00413g

Semiconducting edges and flake-shape evolution of monolayer GaSe: role of edge reconstructions
journal, January 2018


A broadband, self-biased photodiode based on antimony telluride (Sb 2 Te 3 ) nanocrystals/silicon heterostructures
journal, January 2018

  • Parbatani, Asish; Song, Eui Sang; Yang, Fan
  • Nanoscale, Vol. 10, Issue 31
  • DOI: 10.1039/c8nr04047h

Direct transmission electron microscopy observation of the oriented edge-attachment processes between single-layer graphene flakes
journal, January 2019

  • Wan, Neng; Shao, Zhiyong; Zhao, Xiaokang
  • CrystEngComm, Vol. 21, Issue 27
  • DOI: 10.1039/c9ce00280d

Photonic crystallization of two-dimensional MoS 2 for stretchable photodetectors
journal, January 2019

  • Kim, Richard Hahnkee; Leem, Juyoung; Muratore, Christopher
  • Nanoscale, Vol. 11, Issue 28
  • DOI: 10.1039/c9nr02173f

Synthesis and emerging properties of 2D layered III–VI metal chalcogenides
journal, December 2019

  • Cai, Hui; Gu, Yiyi; Lin, Yu-Chuan
  • Applied Physics Reviews, Vol. 6, Issue 4
  • DOI: 10.1063/1.5123487

Quantum confinement and photoresponsivity of β -In 2 Se 3 nanosheets grown by physical vapour transport
journal, June 2016


Substantial improvements of long-term stability in encapsulation-free WS 2 using highly interacting graphene substrate
journal, November 2016


Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole
journal, November 2016


Epitaxial growth of γ -InSe and α , β , and γ -In 2 Se 3 on ε -GaSe
journal, June 2018

  • Balakrishnan, Nilanthy; Steer, Elisabeth D.; Smith, Emily F.
  • 2D Materials, Vol. 5, Issue 3
  • DOI: 10.1088/2053-1583/aac479

Tunable electronic structure in gallium chalcogenide van der Waals compounds
journal, October 2019


Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy
journal, April 2016


2D materials and van der Waals heterostructures
journal, July 2016