Switching behaviors of graphene-boron nitride nanotube heterojunctions

Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

doi:10.1038/srep12238

Title: Switching behaviors of graphene-boron nitride nanotube heterojunctions

Abstract

High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.

Authors:

Parashar, Vyom ^[1]; Durand, Corentin P. ^[2]; Hao, Boyi ^[1]; Amorim, Rodrigo G. ^[1]; Pandey, Ravindra ^[1]; Tiwari, Bishnu ^[1]; Zhang, Dongyan ^[1]; Liu, Yang ^[3]; Li, An -Ping ^[2]; Yap, Yoke Khin ^[1]

Michigan Technological Univ., Houghton, MI (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Mon Jul 20 00:00:00 EDT 2015

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1213398

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 5; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; electronic properties and materials; nanoscale materials

Citation Formats


                    Parashar, Vyom, Durand, Corentin P., Hao, Boyi, Amorim, Rodrigo G., Pandey, Ravindra, Tiwari, Bishnu, Zhang, Dongyan, Liu, Yang, Li, An -Ping, and Yap, Yoke Khin. Switching behaviors of graphene-boron nitride nanotube heterojunctions.  United States: N. p., 2015. 
Web.  doi:10.1038/srep12238.

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                    Parashar, Vyom, Durand, Corentin P., Hao, Boyi, Amorim, Rodrigo G., Pandey, Ravindra, Tiwari, Bishnu, Zhang, Dongyan, Liu, Yang, Li, An -Ping, & Yap, Yoke Khin. Switching behaviors of graphene-boron nitride nanotube heterojunctions.  United States.  https://doi.org/10.1038/srep12238

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                    Parashar, Vyom, Durand, Corentin P., Hao, Boyi, Amorim, Rodrigo G., Pandey, Ravindra, Tiwari, Bishnu, Zhang, Dongyan, Liu, Yang, Li, An -Ping, and Yap, Yoke Khin. Mon .  
"Switching behaviors of graphene-boron nitride nanotube heterojunctions".  United States.  https://doi.org/10.1038/srep12238.  https://www.osti.gov/servlets/purl/1213398.

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@article{osti_1213398,

  title        = {Switching behaviors of graphene-boron nitride nanotube heterojunctions},

  author       = {Parashar, Vyom and Durand, Corentin P. and Hao, Boyi and Amorim, Rodrigo G. and Pandey, Ravindra and Tiwari, Bishnu and Zhang, Dongyan and Liu, Yang and Li, An -Ping and Yap, Yoke Khin},

  abstractNote = {High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.},

  doi          = {10.1038/srep12238},

  journal      = {Scientific Reports},

  number       = ,

  volume       = 5,

  place        = {United States},

  year         = {Mon Jul 20 00:00:00 EDT 2015},

  month        = {Mon Jul 20 00:00:00 EDT 2015}

}

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https://doi.org/10.1038/srep12238

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Title: Switching behaviors of graphene-boron nitride nanotube heterojunctions

Abstract

Citation Formats

Electric Field Effect in Atomically Thin Carbon Films journal, October 2004

Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics journal, December 2004

Graphene transistors journal, May 2010

Energy Band-Gap Engineering of Graphene Nanoribbons journal, May 2007

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors journal, February 2008

Controlling the Electronic Structure of Bilayer Graphene journal, August 2006

Direct observation of a widely tunable bandgap in bilayer graphene journal, June 2009

Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations journal, August 2007

First-principles study of strain-induced modulation of energy gaps of graphene/BN and BN bilayers journal, May 2011

Recent advancements in boron nitride nanotubes journal, January 2010

Boron nitride substrates for high-quality graphene electronics journal, August 2010

Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature journal, June 2011

Graphene and boron nitride lateral heterostructures for atomically thin circuitry journal, August 2012

In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes journal, January 2013

Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges journal, January 2014

Effective growth of boron nitride nanotubes by thermal chemical vapor deposition journal, October 2008

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Inhomogeneous Electron Gas journal, November 1964

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The SIESTA method for ab initio order- N materials simulation journal, March 2002

Energy Gap Induced by Friedel Oscillations Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries journal, February 2014

Very Stable Electron Field Emission from Strontium Titanate Coated Carbon Nanotube Matrices with Low Emission Thresholds journal, December 2012

Electronic structure of radially deformed BN and BC 3 nanotubes journal, April 2001

Exceptional ballistic transport in epitaxial graphene nanoribbons journal, February 2014

Room-Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots journal, June 2013

Very Stable Electron Field Emission from Strontium Titanate Coated Carbon Nanotube Matrices with Low Emission Thresholds journal, December 2012

Direct observation of a widely tunable bandgap in bilayer graphene journal, June 2009

Graphene and boron nitride lateral heterostructures for atomically thin circuitry journal, August 2012

Graphene transistors journal, May 2010

Recent advancements in boron nitride nanotubes journal, January 2010

Field emission and strain engineering of electronic properties in boron nitride nanotubes journal, February 2012

Electric Field Effect in Atomically Thin Carbon Films journal, October 2004

Controlling the Electronic Structure of Bilayer Graphene journal, August 2006

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors journal, February 2008

Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges journal, January 2014

Micrometer-scale ballistic transport in encapsulated graphene at room temperature text, January 2011

Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications journal, January 2016

Water purification: oil–water separation by nanotechnology and environmental concerns journal, January 2017

Synthesis of boron nitride nanotubes using an oxygen and carbon dual-free precursor journal, January 2018

Electronic Structure and Room Temperature of 2D Dilute Magnetic Semiconductors in Bilayer MoS 2 -Doped Mn journal, January 2020

Electric Field Effect in Atomically Thin Carbon Films
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Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics
journal, December 2004

Graphene transistors
journal, May 2010

Energy Band-Gap Engineering of Graphene Nanoribbons
journal, May 2007

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
journal, February 2008

Controlling the Electronic Structure of Bilayer Graphene
journal, August 2006

Direct observation of a widely tunable bandgap in bilayer graphene
journal, June 2009

Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations
journal, August 2007

First-principles study of strain-induced modulation of energy gaps of graphene/BN and BN bilayers
journal, May 2011

Recent advancements in boron nitride nanotubes
journal, January 2010

Boron nitride substrates for high-quality graphene electronics
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Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
journal, June 2011

Graphene and boron nitride lateral heterostructures for atomically thin circuitry
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In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes
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Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges
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Effective growth of boron nitride nanotubes by thermal chemical vapor deposition
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Patterned Growth of Boron Nitride Nanotubes by Catalytic Chemical Vapor Deposition
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Room-Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots
journal, June 2013

Field emission and strain engineering of electronic properties in boron nitride nanotubes
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Inhomogeneous Electron Gas
journal, November 1964

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The SIESTA method for ab initio order- N materials simulation
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Energy Gap Induced by Friedel Oscillations Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries
journal, February 2014

Very Stable Electron Field Emission from Strontium Titanate Coated Carbon Nanotube Matrices with Low Emission Thresholds
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Electronic structure of radially deformed BN and ${BC}_{3}$ nanotubes
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Exceptional ballistic transport in epitaxial graphene nanoribbons
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Room-Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots
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Very Stable Electron Field Emission from Strontium Titanate Coated Carbon Nanotube Matrices with Low Emission Thresholds
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Direct observation of a widely tunable bandgap in bilayer graphene
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Graphene and boron nitride lateral heterostructures for atomically thin circuitry
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Recent advancements in boron nitride nanotubes
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Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004

Controlling the Electronic Structure of Bilayer Graphene
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Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
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Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges
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Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications
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Water purification: oil–water separation by nanotechnology and environmental concerns
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