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Title: Compensation mechanism of bromine dopants in cadmium telluride single crystals

Abstract

We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (P Cd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻ Cd, Cd²⁺ i, V²⁺ Te, Te²⁻ i), and substitutional ones (Br⁰ Te, Br⁺ Te), as well as complexes of point defects, i.e., (Br⁺ Te V²⁻ Cd)⁻ and (2Br⁺ Te V²⁻ Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(P Cd) are determined by two dominant defects – Br⁺ Te and (2Br⁺ Te V²⁻ Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

Authors:
 [1];  [2];  [2];  [3];  [3];  [2];  [1];  [3]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Yuriy Fed'kovych Chernivtsi National Univ., Chernivtsi (Ukraine)
  3. "Vasyl Stefanyk Precarpathian National Univ.", Ivano-Frankivsk (Ukraine)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation (NA-20)
OSTI Identifier:
1213357
Alternate Identifier(s):
OSTI ID: 1246389
Report Number(s):
BNL-108061-2015-JA
Journal ID: ISSN 0022-0248; NN2001; TRN: US1500638
Grant/Contract Number:  
SC00112704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 415; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; computer simulation; point defects; Bridgman technique; semiconducting cadmium compounds

Citation Formats

Bolotnikov, A. E., Fochuk, P. M., Verzhak, Ye. V., Parashchuk, T. O., Freik, D. M., Panchuk, O. E., James, R. B., and Gorichok, I. V. Compensation mechanism of bromine dopants in cadmium telluride single crystals. United States: N. p., 2015. Web. doi:10.1016/j.jcrysgro.2014.11.005.
Bolotnikov, A. E., Fochuk, P. M., Verzhak, Ye. V., Parashchuk, T. O., Freik, D. M., Panchuk, O. E., James, R. B., & Gorichok, I. V. Compensation mechanism of bromine dopants in cadmium telluride single crystals. United States. doi:10.1016/j.jcrysgro.2014.11.005.
Bolotnikov, A. E., Fochuk, P. M., Verzhak, Ye. V., Parashchuk, T. O., Freik, D. M., Panchuk, O. E., James, R. B., and Gorichok, I. V. Fri . "Compensation mechanism of bromine dopants in cadmium telluride single crystals". United States. doi:10.1016/j.jcrysgro.2014.11.005. https://www.osti.gov/servlets/purl/1213357.
@article{osti_1213357,
title = {Compensation mechanism of bromine dopants in cadmium telluride single crystals},
author = {Bolotnikov, A. E. and Fochuk, P. M. and Verzhak, Ye. V. and Parashchuk, T. O. and Freik, D. M. and Panchuk, O. E. and James, R. B. and Gorichok, I. V.},
abstractNote = {We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.},
doi = {10.1016/j.jcrysgro.2014.11.005},
journal = {Journal of Crystal Growth},
number = C,
volume = 415,
place = {United States},
year = {2015},
month = {1}
}

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