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Title: Tellurium n-type doping of highly mismatched amorphous GaN 1-xAs x alloys in plasma-assisted molecular beam epitaxy

In this paper we report our study on n-type Te doping of amorphous GaN 1-xAs x layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN 1-xAs x layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN 1-xAs x layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN 1-xAs x layers has been determined.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [4] ;  [3] ;  [1]
  1. Univ. of Nottingham (United Kingdom)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  4. US Army Research Lab., Adelphi, MD (United States)
  5. Univ. of Strathclyde, Glasgow (United Kingdom)
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Published Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Name: Journal of Crystal Growth Journal Volume: 404 Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1209763

Novikov, S. V., Ting, M., Yu, K. M., Sarney, W. L., Martin, R. W., Svensson, S. P., Walukiewicz, W., and Foxon, C. T.. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy. Netherlands: N. p., Web. doi:10.1016/j.jcrysgro.2014.06.042.
Novikov, S. V., Ting, M., Yu, K. M., Sarney, W. L., Martin, R. W., Svensson, S. P., Walukiewicz, W., & Foxon, C. T.. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy. Netherlands. doi:10.1016/j.jcrysgro.2014.06.042.
Novikov, S. V., Ting, M., Yu, K. M., Sarney, W. L., Martin, R. W., Svensson, S. P., Walukiewicz, W., and Foxon, C. T.. 2014. "Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy". Netherlands. doi:10.1016/j.jcrysgro.2014.06.042.
@article{osti_1209763,
title = {Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy},
author = {Novikov, S. V. and Ting, M. and Yu, K. M. and Sarney, W. L. and Martin, R. W. and Svensson, S. P. and Walukiewicz, W. and Foxon, C. T.},
abstractNote = {In this paper we report our study on n-type Te doping of amorphous GaN1-xAsx layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsx layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsx layers has been determined.},
doi = {10.1016/j.jcrysgro.2014.06.042},
journal = {Journal of Crystal Growth},
number = C,
volume = 404,
place = {Netherlands},
year = {2014},
month = {10}
}