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Title: Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin films

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1209556
Grant/Contract Number:  
FG02-08ER46536/A000
Resource Type:
Published Article
Journal Name:
Progress in Natural Science
Additional Journal Information:
Journal Name: Progress in Natural Science Journal Volume: 22 Journal Issue: 1; Journal ID: ISSN 1002-0071
Publisher:
Elsevier
Country of Publication:
China
Language:
English

Citation Formats

Buchholz, D. B., Proffit, D. E., Wisser, M. D., Mason, T. O., and Chang, R. P. H. Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin films. China: N. p., 2012. Web. doi:10.1016/j.pnsc.2011.12.001.
Buchholz, D. B., Proffit, D. E., Wisser, M. D., Mason, T. O., & Chang, R. P. H. Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin films. China. doi:10.1016/j.pnsc.2011.12.001.
Buchholz, D. B., Proffit, D. E., Wisser, M. D., Mason, T. O., and Chang, R. P. H. Wed . "Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin films". China. doi:10.1016/j.pnsc.2011.12.001.
@article{osti_1209556,
title = {Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin films},
author = {Buchholz, D. B. and Proffit, D. E. and Wisser, M. D. and Mason, T. O. and Chang, R. P. H.},
abstractNote = {},
doi = {10.1016/j.pnsc.2011.12.001},
journal = {Progress in Natural Science},
number = 1,
volume = 22,
place = {China},
year = {2012},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.pnsc.2011.12.001

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Cited by: 16 works
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