Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe 2 Nanostructures
Abstract
Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron-electron interactions on van der Waals heterostructures and helps to clarify how their electronic properties might be tuned in future 2D nanodevices.
- Authors:
-
- Univ. of California, Berkeley, CA (United States). Dept. of Physics
- Univ. of California, Berkeley, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States). Dept. of Physics; Tsinghua Univ., Beijing (China). Dept. of Physics
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States). Dept. of Physics; National Univ. of Singapore (Singapore). Centre for Advanced 2D Materials and Graphene Research Centre
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1208931
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 15; Journal Issue: 4; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; transition metal dichalcogenide; graphene; quasiparticle bandgap; Coulomb interaction; screening; STM/STS
Citation Formats
Bradley, Aaron J., M. Ugeda, Miguel, da Jornada, Felipe H., Qiu, Diana Y., Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G., and Crommie, Michael F. Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe 2 Nanostructures. United States: N. p., 2015.
Web. doi:10.1021/acs.nanolett.5b00160.
Bradley, Aaron J., M. Ugeda, Miguel, da Jornada, Felipe H., Qiu, Diana Y., Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G., & Crommie, Michael F. Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe 2 Nanostructures. United States. https://doi.org/10.1021/acs.nanolett.5b00160
Bradley, Aaron J., M. Ugeda, Miguel, da Jornada, Felipe H., Qiu, Diana Y., Ruan, Wei, Zhang, Yi, Wickenburg, Sebastian, Riss, Alexander, Lu, Jiong, Mo, Sung-Kwan, Hussain, Zahid, Shen, Zhi-Xun, Louie, Steven G., and Crommie, Michael F. Mon .
"Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe 2 Nanostructures". United States. https://doi.org/10.1021/acs.nanolett.5b00160. https://www.osti.gov/servlets/purl/1208931.
@article{osti_1208931,
title = {Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe 2 Nanostructures},
author = {Bradley, Aaron J. and M. Ugeda, Miguel and da Jornada, Felipe H. and Qiu, Diana Y. and Ruan, Wei and Zhang, Yi and Wickenburg, Sebastian and Riss, Alexander and Lu, Jiong and Mo, Sung-Kwan and Hussain, Zahid and Shen, Zhi-Xun and Louie, Steven G. and Crommie, Michael F.},
abstractNote = {Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron-electron interactions on van der Waals heterostructures and helps to clarify how their electronic properties might be tuned in future 2D nanodevices.},
doi = {10.1021/acs.nanolett.5b00160},
journal = {Nano Letters},
number = 4,
volume = 15,
place = {United States},
year = {Mon Mar 16 00:00:00 EDT 2015},
month = {Mon Mar 16 00:00:00 EDT 2015}
}
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