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Title: Atomic Layer Deposition of the Solid Electrolyte LiPON

We demonstrate an atomic layer deposition (ALD) process for the solid electrolyte lithium phosphorousoxynitride (LiPON) using lithium tert-butoxide (LiO tBu), H 2O, trimethylphosphate (TMP), and plasma N 2 ( PN 2) as precursors. We use in-situ spectroscopic ellipsometry to determine growth rates for process optimization to design a rational, quaternary precursor ALD process where only certain substrate–precursor chemical reactions are favorable. We demonstrate via in-situ XPS tunable nitrogen incorporation into the films by variation of the PN 2 dose and find that ALD films over approximately 4.5% nitrogen are amorphous, whereas LiPON ALD films with less than 4.5% nitrogen are polycrystalline. Lastly, we characterize the ionic conductivity of the ALD films as a function of nitrogen content and demonstrate their functionality on a model battery electrode—a Si anode on a Cu current collector.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Univ. of Maryland, College Park, MD (United States)
Publication Date:
Grant/Contract Number:
SC0001160
Type:
Published Article
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 27; Journal Issue: 15; Related Information: NEES partners with University of Maryland (lead); University of California, Irvine; University of Florida; Los Alamos National Laboratory; Sandia National Laboratories; Yale University; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Research Org:
Energy Frontier Research Centers (EFRC), Washington, D.C. (United States). Nanostructures for Electrical Energy Storage (NEES)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; bio-inspired; energy storage (including batteries and capacitors); defects; charge transport; synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing)
OSTI Identifier:
1206791
Alternate Identifier(s):
OSTI ID: 1385989